研究重點在於製作：導電性與附著力佳之Ta 薄膜、降低Ta/CuInSe2之間歐姆接觸、化學水浴法成長CdS薄膜、低電阻率和高穿透率之AZO薄膜、製作CuInSe2太陽能電池元件。
在RF Sputtering系統中成長Ta薄膜，當操作壓力及基材溫度改變，能促使Ta薄膜由β相(高電阻率)轉變為α相(低電阻率)，此為Ta原子自基材中獲得足夠之能量，促使本身能以最穩定之體心立方結構(即α相)沉積，並且成長出低張應力、低片電阻之鉭薄膜，因此雙層結構之Ta、Mo薄膜，其片電阻分別為1.78(Ω/□)、0.98(Ω/□)。
設計改良適當之膜層，Ta薄膜在CuInSe2薄膜下層之特徵接觸電阻（ρc），其值較Ta薄膜在CuInSe2薄膜上層之特徵接觸電阻（ρc）小。
化學水浴法成長CdS薄膜，當PH=10.4，在XRD為2θ=26.7o 有強繞射峰，此可判定為Hexagonal(002)CdS，薄膜會較佳(因為穩定性佳)。
以室溫下濺鍍成長AZO薄膜，最佳片電阻有效地降低至8.19(Ω/□)，電阻率降低至7.6×10-4 (Ω-cm)。
成長Al/AZO/ ZnO /CuInSe2 /Ta/SLG 為結構元件，在模擬光源(AM1.5，100mW/cm2)照射下，Voc =0.30V，I sc = 2.75 mA ，FF = 25.8 ﹪。緩衝層以CdS取代ZnO為結構元件下，Voc =0.38 V，I sc = 2.70 mA ，FF = 37.8﹪，則FF (fill factor)有很明顯改善。

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第一章 前言與研究目的 1
1.1 前言 1
1.2 研究目的 1
1.2.1 Ta薄膜性質 1
1.2.2 傳輸線模型理論 (Transmission Line Model；TLM) 2
1.2.3 AZO薄膜性質 3
1.2.4 CuInSe2太陽能電池元件結構 4
1.3 太陽能電池之歷史背景與研究發展概況 5
第二章 理論基礎與文獻回顧 9
2.1 各層薄膜之特性 9
2.1.1 鈉玻璃基板 9
2.1.2 Ta金屬電極 9
2.1.3 CuInSe2 複晶薄膜性質 11
2.1.4 CdS緩衝層 14
2.1.5 AZO 透光外窗層 15
2.1.6 Al 金屬電極 18
2.2 元件結構設計 19
第三章 實驗原理、步驟與分析儀器 20
3.1 實驗原料 20
3.2 熱蒸鍍之原理與系統 20
3.3 磁控濺鍍之原理與系統 21
3.4 實驗分析儀器 23
3.4.1 α-step 膜厚測量 23
3.4.2 反射光譜儀 23
3.4.3 吸收光譜儀 24
3.4.4 四點探針(four point) 24
3.4.5 熱探針(Hot probe) 25
3.4.6 電流-電壓特性曲線量測(I-V measurement) 26
3.4.7 X-ray繞射儀 26
3.4.8 掃描式電子顯微鏡(SEM) 27
3.4.9 解析型掃描穿透式電子顯微鏡(JEOL TEM-3010 ) 27
3.4.10 Focused Ion Beam (FIB) 雙束型聚焦離子束 27
第四章 實驗設計與步驟 29
4.1 鈉玻璃基板 29
4.2 鉭Ta(鉬Mo)背電極成長 29
4.3 P-type CuInSe2主吸收層薄膜成長 30
4.4 傳輸線模型理論實驗流程 31
4.5 化學水浴沈積法成長硫化鎘(CdS)薄膜 34
4.6 AZO 透光層成長 37
4.6.1 靶材前處理 37
4.6.2 ZnO:Al 薄膜成長步驟 37
4.7 Al金屬電極成長 39
4.8 元件製作流程圖 39
4.8.1 元件轉換效率之基本參數 40
4.8.2 轉換效率量測 41
第五章 實驗結果與討論 42
5.1 Ta(Mo)金屬電極之鍍製 42
5.1.1 加熱基板溫度對薄膜電阻率之影響 42
5.1.2 腔體氬氣壓力對薄膜電阻率之影響 43
5.1.3 XRD結構分析 44
5.1.4 腔體氬氣壓力對薄膜應力之影響 44
5.1.5 濺鍍鉭金屬之雙層結構(Bi-layer structure) 46
5.1.6 STEM橫截面分析 48
5.1.7 改變功率對氮化鉭(TaN)薄膜電阻率之影響 49
5.2 CuInSe2主吸收層之鍍製 50
5.2.1 #1、#2 CuInSe2薄膜之XRD 結構分析 52
5.2.2 #1、#2 CuInSe2薄膜之SEM表面形貌分析 54
5.2.3 導電性量測 55
5.3 傳輸線模型理論 (Transmission Line Model；TLM) 55
5.3.1 CuInSe2與Ta傳輸線量測所得電阻值與距離之關係 55
5.3.2 設計改良適當之膜層 56
5.4 CdS之鍍製 60
5.4.1 導電性量測 60
5.4.2 吸收光譜儀分析 61
5.4.3 XRD 結構分析 62
5.5 AZO透光層之鍍製 64
5.5.1 腔體氬氣壓力對AZO薄膜之影響 64
5.5.2 濺鍍距離對AZO薄膜之影響 66
5.6 元件之製作與轉換效率量測 71
5.6.1 A元件(Al/AZO/ZnO/CuInSe2/Ta/SLG) 71
5.6. 2 B元件(Al/AZO/CdS/CuInSe2/Ta/SLG) 73
5.6. 3 C元件(Al/AZO/CdS/CuInSe2/Mo/SLG) 80
第六章 結論 83
參考文獻 85

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