我們實驗室已經成功發現有大的自旋裂矩於AlxGa1-xN/GaN異質結構所製成的奈米線元件之上。利用此技術，和spin Hall-effect、Rashba and Dresselhaus effects等原理的應用，我們設計出新的自旋電子元件，量子環干涉元件（Spin-Hall Quantum-ring Interferometer）。用感應耦合式電漿蝕刻系統蝕刻出電極的圖形，並用多靶磁控濺鍍機濺鍍SiO2當保護層，再用電子槍蒸鍍機蒸鍍銦在電極上，最後用聚焦離子束製作出量子環和其上的閘極。本篇論文致力於探討製程設計，改進製程所產生的問題以降低元件的電阻，以期能在低溫高磁場的實驗中量測到量子環干涉元件的訊號。

We have observed a large spin-splitting in device made of AlxGa1-xN/GaN quantum wires. Based on this observation, we proposed a new spintronic application, the spin-hall quantum-ring interferometer, by the spin-Hall effect, Rashba and Dresselhaus effects. This device we use the ICP Etch System to etch the contact pattern, and then use the Multi-Target Sputter to deposit the protecting layer, and then use the E-Beam Evaporator to make the contact. Finally, using the Focus Ion Beam, we fabricate the quantum-ring and gate successfully. This thesis is focused on discussing the design of the fabrication and try to solve the problem in order to be able to detect the signal of the quantum-ring interferometer at low temperature and high magnetic condition.

目錄
第一章　簡介 1
1-1 前言： 1
1-2 Datta and Das 自旋場效電晶體 2
1-3 量子環干涉器(Quantum-ring interferometer)設計： 3
第二章　原理 5
2-1 Rashba and Dresselhaus effect： 5
第三章 實驗儀器 8
3-1　光學微影系統 (含光罩對準機、光阻旋轉塗佈機、烤盤) 8
3-2 多靶磁控濺鍍( Multi-Target Sputter ) 12
3-3 感應耦合式電漿蝕刻系統(Inductive Couple Plasma Etcher) 16
3-4 雙電子槍蒸鍍機(Dual E-Beam Evaporator) 20
3-5 聚焦離子束(Focused Ion Beam) 24
第四章　實驗過程與結果 28
4-1 AlGaN/GaN奈米線製程與量測 28
4-2 量子環干涉儀初步設計 37
4-3 量子環干涉儀第二次設計 44
4-4 量子環干涉儀第三次設計 49
4-5 量子環干涉儀第四次設計 53
4-6 量子環干涉儀第五次設計 56
第五章 結論 60
Reference 61

[1] Ikai Lo, Wen-Yuan Pang, Yen-Liang Chen, Yu-Chi Hsu, Jih-Chen Chiang, Wei-Hsin Lin, Wan-Ting Chiu, Jenn-Kai Tsai, and Chun-Nan Chen, Appl. Phys. Lett. 93, 132114 (2008)
[2]林怡萍, “自旋的電性操控-淺談自旋軌道耦合”,物理雙月刊(二十八卷五期) 2006年10月.
[3] Datta and Das, Appl. Phys. Lett. 56, 665 (1990)
[4] Ikai Lo, et al. Appl. Phys. Lett. 93, 132114 (2008)
[5] Ikai Lo, M. H. Gau, J. K. Tsai, Y. L. Chen, Z. J. Chang, W. T. Wang, and AnJ. C. Chiang , “omalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures” Phys. Rev. B 75,245307 (2007)
[6] S. D. Ganichev, V. V. Bel’kov, L. E. Golub, E. L. Ivchenko, Petra Schneider, S. Giglberger, J. Eroms, J. De Boeck, G. Borghs, W. Wegscheider, D. Weiss, and W. Prettl, “Experimental Separation of Rashba and Dresselhaus Spin Splittings in Semiconductor Quantum Wells” Phys. Rev. Lett. 92, 256601 (2004)
[7] Wan-Tsang Wang, C. L. Wu, S. F. Tsay, M. H. Gau, Ikai Lo, H. F. Kao, D. J. Jang, and Jih-Chen Chiang, “Dresselhaus effect in bulk wurtzite materials”, Appl. Phys. Lett. 91, 082110 (2007)
[8]林瑋歆, “Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field”,中山大學物理系碩士論文(97)
[9]楊佳慶, “Fabricate the AlGaN/GaN nanowires for metal-oxide-semiconductor field effect transistor by focus ion beam”,中山大學物理系碩士論文(97)
[10] Ikai Lo,a Y. L. Chen, W. Y. Pang, Y. C. Hsu, Jih-Chen Chiang, C. C. Yang, andJ. Y. Su, JOURNAL OF APPLIED PHYSICS 105, 1(2009)
[11] Ikai Lo, J. K. Tsai, W. J. Yao, P. C. Ho, Li-Wei Tu, and T. C. Chang, “ Spin splitting in modulation-doped AlxGa1ÀxNÕGaN heterostructures”, PHYSICAL REVIEW B, VOLUME 65, 161306~R!
[12] 〝奈米核心設施-儀器設備〞, 高屏地區國立中山大學奈米核心設施共同實驗室.
[13]張慶瑞, “旋轉的新世紀-自旋電子傳輸與自旋電子學”,物理雙月刊(二十二卷六期) 2000年12月.