本文中，以量子井熱混合擴散方式-內部晶格擴散，來調整材料能隙以達到光積體整合的最佳化，並以整合電致吸收光調變器與半導體光放大器為研究。藉由該擴散機制，可區域性調整材料能隙，使單一晶片中光調變器操作波長往短波長移動，又稱之為藍位移。而光放大器仍維持材料操作波長，如此可使得光調變器整合光放大器元件有更好的性能。
製作上先於晶片上電致吸收光調變器區域濺鍍400nm的二氧化矽做為吸附層，接著使用快速高溫熱退火系統使量子井與位能障間原子發生擴散。元件製程部分，P型金屬與N型金屬分別為鈦/鉑/金(Ti/Pt/Au)與鎳/金鍺合金/鎳/金(Ni/AuGe/Ni/Au)做為歐姆接觸，並底切蝕刻主動波導來達到高速傳輸，最後進行平坦化製程並蒸鍍鈦/金作為共平面電極。經量測光電流頻譜，光調變器區域有10nm的藍位移效果。元件直流分析方面，光調變器調變效率可達15dB/V，消光比兩伏為20dB；光放大器增益為3dB且最大增益波長為1540nm。微波特性方面，整合元件3dB頻寬也可達20GHz。實驗結果顯示，本研究成功地在不使用重複磊晶的方式達到最佳化光積體整合型元件。

In this work, a quantum well intermixing(QWI) technology, called impurity free vacancy diffusion(IFVD), is used to do the bandgap engineering in an optoelectronic monolithic integration. The monolithic integration of SOAs and EAMs is taken as an example. By IFVD, the transition energy levels of EAM quantum wells can be shifted to shorter wavelength regime, while SOA quantum wells are kept the same. Therefore, the overall SOA-integrated EAM efficiency can be improved.
A 400nm thick SiO2 is sputtered at the EAM regions to locally create defects in the surface of pin InGaAsP/Imp layer structure. Rapid thermal Annealing (RTA) technique at 850oC is then used to inter-diffuse the atom of quantum wells. A SOA-integrated EAM is fabricated on such template. Ti/Pt/Au and Ni/AuGe/Ni/Au are used for p-type and n-type metallization. An optical waveguide structure is defined by selective undercut-etching active region. The PMGI is spun for planarization and bridging. A Ti/Au is finally deposited as microwave coplanar waveguide. A DC measurement of photocurrent spectrum is performed to examine the wavelength shift. A 10nm shift is found between EAM and SOA regions. Modulation efficiency of 15dB/V with extinction ratio of higher than 20dB is observed in EAM device. And the optical gain of SOA is found as 3dB at 1540nm excitation wavelength. -3dB bandwidth of 20GHz is obtained. In comparison with sample without intermixing, the same results are achieved in intermixing sample, suggesting no regrowth processing is needed for obtaining the same quality of optoelectronic integration.

中文摘要 2
英文摘要 3
致謝 4
第一章 簡介 8
1.1 前言 8
1.2 研究動機 8
1.3 材料能隙工程 10
1.4 論文架構 13
第二章 設計理論與計算 14
2.1 熱混合擴散效應 14
2.2 .EAMSOA工作波長匹配 19
2.3 計算熱混合擴散之量子井 19
2.3.1 熱混合擴散效應下能帶結構的改變 20
2.3.2 量子井波函數與基態能階計算 24
第三章 熱混合擴散與整合元件之方法與製作 35
3.1 熱混合擴散製程 35
3.2 整合元件製程 36
3.2.1 離子佈植與蒸鍍P型金屬 36
3.2.2 濕蝕刻P型被動光波導 38
3.2.3 底切蝕刻主動波導 40
3.2.4 蒸鍍N型金屬與定義絕緣層 41
3.2.5 平坦化製程 42
3.2.6 蒸鍍共平面電極 44
3.3 製程結論與檢討 45
第四章 元件特性量測與分析 45
4.1 半導體電流對電壓曲線結論 45
4.2 .EAMSOA整合元件直流分析 45
4.3 .EAMSOA整合元件微波量測 50
第五章 結論 53
第六章 參考資料與文獻 54

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