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博碩士論文 etd-0728110-000520 詳細資訊
Title page for etd-0728110-000520
論文名稱
Title
製程參數對電沉積類鑽碳薄膜特性之影響
The effect of process parameters on the properties of diamond-like carbon thin film
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
168
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2010-07-19
繳交日期
Date of Submission
2010-07-28
關鍵字
Keywords
光學能隙、類鑽碳薄膜、電沉積、抗反射層
Optical band gap, electrodeposition, Antireflection layer, DLC
統計
Statistics
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中文摘要
因為類鑽碳的特性包括高硬度,高抗磨耗性,低摩擦係數,化學惰性,高電阻性,低介電常數和IR 透明性和具有場發射特性,類鑽碳的製程上通常採用CVD或PVD技術,需要較高基板溫度,且沉積速率較低,以及不能大面積成膜的問題。限制了類鑽石薄膜的發展。電沉積方法剛好滿足上述需求如:設備便宜、沉積速率高、大面積鍍膜。
本文主要研究是在ITO基板上電沈積類鑽碳薄膜,進行在大面積上沉積DLC薄膜的可能性;利用電沉積法在低電位下進行沉積類鑽碳薄膜,其中電解液為醋酸與去離子水不同比例的混合水溶液,沉積條件為:濃度0.01%~0.8%;電壓2.1V~50V;溫度30℃~85℃。此外,利用控制變因方法,改變不同的沉積參數,包括電壓、沉積溫度和溶液濃度,探討對類鑽碳薄膜的特性與品質的影響。在特性的研究與分析上,利用n&k薄膜分析儀(n&k Analyze)、X光光電子能譜(XPS)、傅立葉紅外線光譜儀(FTIR)、掃描式電子顯微鏡(SEM)來做分析。
由n&k薄膜分析儀可測得整體材料的反射率、穿透率、和折射率,並利用此數據來找出抗反射層的最佳條件和推算Eopg;對SEM的分析,可分別觀察類鑽碳薄膜成長的均勻度及表面結構,用此結果找出成長最好品質的類鑽碳薄膜的條件;另外從電流-時間圖形可以觀察出,隨著電壓、濃度、溫度的增加,皆會使各種薄膜表面特性隨著改變;薄膜的內在結構可由XPS的Cls內部分解比例; 即sp2 / sp3的比例,從其變化可以發現工作電壓、電解液濃度、基板溫度越大時,其值會越來越小。至於DLC膜中含氫量的多少可由分析FTIR結果得到,當工作電壓、電解液濃度、基板溫度越大時,DLC膜中的氫含量減少。至於DLC鍍在ITO玻璃上作為抗反射層時,理論匹配折射率為1.32,由實驗結果發現DLC薄膜使反射率減少了40%~70%。
最後,在所得到的各項結果中,都互相匹配,仔細的結論將詳述于本文中。本文所得到的結果日後將可在元件上的應用做個良好的基礎。
Abstract
Since the diamond like carbon features include high hardness and high wear resistance, low friction coefficient, chemical inertness, high resistance, low dielectric constant, the IR Transparency and field emission. The process of Diamond carbon film was usually by CVD or PVD techniques. However, high substrate temperature or low deposition rate and the can not make large area of films leads to limit the applications of diamond like film. Electrodeposition method is an innovative method to prepare DLC film and it meets these demands such as: equipment cheap, high deposition rate and larger area coatings.
In this paper, ITO substrate was used for electrodeposition the diamond-like carbon films and to evaluate the possibility for the large area of DLC films.For the process of electrical deposition, the electrolyte consists of acetic acid and DI water mixed in different proportions. The deposition process were conditioned as: electrolyte concentration between 0.01% and 0.8%; voltage from 2.1V to 50V; growth temperature in the range of 300C ~ 850C. In addition, by using the control variables method, the deposition parameters including voltage, deposition temperature and solution concentration of electrolyte were varied to evaluate the characteristics and quality of diamond-like carbon films. The n & k film analyzer (n & k Analyze), X ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) were used to characterize the surface morphology, microstructure and compositional analysis.
The reflectivity, transmittance, and refractive index of DLC Films were revealed by the n & k analyzer. Hence, the best conditions used for anti-reflective layer and projections Eopg can be achieved. For SEM analysis, the DLC film with uniformity surface structure can be found. Additionally, the current - time graph can be used to predict the properties of film varied with the applied voltage, percent of concentrations, growth temperature etc.. The microstructure of DLC film was investigated by the XPS measurement; the sp2 / sp3 ratio varies from the growth parameters changes. The hydrogen content of DLC films was obtained by FTIR measurements, the contents decrease as the operating voltage, electrolyte concentration and the substrate temperature increase. As for the DLC deposited on ITO glass as an anti-reflective layer, the experimental results showed that DLC film can reduce the reflectivity from 40% to 70%.
Finally, the results obtained show a reasonable match for various measurements. T he characteristics of DLC films also shows that it very depends on the deposited parameters and the relationship beteen them was discussed in detailed. Some of the advance study will be investigated in future.
目次 Table of Contents
致謝................................................................................... 1
摘 要............................................................................. 2
ABSTRACT..................................................................... 4
目錄...................................................................... 7
第一章 緒 論......................................................... 20
1-1 前言.............................................................................20
1-2 研究目的.....................................................................22
1-3 論文架構.................................................................23
第二章 理 論 背 景................................................... 24
2-1 類鑽碳薄膜發展史.....................................................24
2-2 電沉積的起源..........................................................25
2-3 類鑽碳薄膜.................................................................26
2-4 類鑽碳的結構模型...................................................30
2-5 類鑽碳的特性與應用..................................................31
2-6 類鑽碳的成長機制....................................................34
2-6-1 薄膜沉積現象.....................................................34
2-6-2 長晶...................................................................34
2-6-3 晶粒成長...................................................................35
2-6-4 晶粒聚結...............................................................36
2-6-5 縫道填補與薄膜的成長......................................37
2-7 薄膜光學性質............................................................38
2-7-1 抗反射層的簡介...........................................38
2-7-2 薄膜的穿透與反射原理........................................38
第三章 實驗方法與儀器設備....................................... 42
3-1 實驗材料與儀器設備...............................................42
3-1-1 實驗材料...............................................................42
3-1-2 儀器設備............................................................42
3-2 類鑽碳成膜實驗操作步驟...........................................43
3-2-1 基板的前置處理...............................................43
3-2-2 電解液的泡製......................................................43
3-2-3 電沉積之操作步驟...............................................44
3-3 量測儀器與其原理..........................................45
3-3-1 掃瞄式電子顯微鏡(Scanning Electron Microscopy)........45
3-3-2 X光光電子能譜儀..................................................48
3-3-3 傅立葉轉換紅外光譜儀(Fourier-Transform Infrared Spectrometer)..................................................51
3-3-3 n&k analyzer .....................................................54
第四章 結果與討論...................................................... 58
4-1 電流曲線特性分析...........................................58
4-1-1 工作電壓之影響.................................................58
4-1-2 溫度之影響...........................................................62
4-1-3 電解液濃度之影響...............................................65
4-1-4 活化能比較............................................................69
4-2 SEM表面分析............................................................72
4-2-1 電壓之影響.....................................................72
4-2-2 溫度之影響........................................................72
4-2-3 濃度之影響......................................................73
4-3 傅立葉轉換紅外光譜儀(FTIR)分析............................73
4-3-1 電壓之影響........................................................74
4-3-2 溫度之影響.........................................................75
4-3-3 濃度之影響.......................................................76
4-4 X光光電子能譜分析...................................................77
4-4-1 電壓之影響........................................................77
4-4-2 溫度之影響.........................................................77
4-4-3 濃度之影響............................................................78
4-5 樣品表面圖........................................................78
4-6 光學分析................................................................79
4-6-1 n&k analyzer分析...........................................79
4-6-2 光學能隙(Optical band gap) .................................82
4-6-3 抗反射層條件.........................................................83
第五章 總 結........................................................... 86
參考文獻................................................................ 161
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