本論文中，我們將使用五氧化二鉭(Ta2O5)做出高品質低損耗微環形共振腔，並討論要如何改善製程來進一步優化品質因子以及損耗。首先，我們提出使用物理沉積濺鍍法成長二氧化矽包覆層，來避免原先化學氣相沉積所產生的氫鍵，但因為濺鍍機在濺鍍薄膜過程中會產生階梯覆蓋效應，造成包覆層有微裂痕影響了光的傳輸導致傳輸損耗改善反而變差品質因子不佳。第二個方法中我們提出元件後退火方法，使用550℃和650℃兩個溫度退火後傳播損耗降低了42%，品質因子Q上升了42%放大倍率上升50%，在四波混頻方面，也在注入了4mW的功率即有-39dB的轉換效率，比起原先退火前轉換效率明顯提升，另外也用了自相位調變(SPM)來量測元件後退火對於非線性折射率影響，最後雖然非線性折射率沒改變，但也從光譜拓寬程度再度證實了元件後退火對於傳輸損耗下降是有貢獻的。

In this thesis, loss optimization within Ta2O5 based micro-ring resonator was investigated. Two methods were proposed and studied. First, to reduce the absorption of N-H bond from PECVD growth SiO2 cladding laser, sputtering growth cladding was proposed. Here, using physical deposition sputter, SiO2 cladding deposition was used for avoiding absorption from N–H bonds. However, the inevitable micro-crack due to step coverage limit the loss performance. Second, by controlling the post annealing temperature and times, loss performance of the devices was investigated and improved successfully. The propagation loss of ring resonator with diameter of 100μm was reduced around 42% and with value as low as 0.44cm-1 after post annealing. The corresponding loaded and unload Q are around 52500 and 185000, respectively. Furthermore, the nonlinear applications such as four-wave mixing conversion was applied for confirming waveguide quality. Comparing to nondetective FWM signal from device before post annealing treatment, the FWM conversion efficiency of -39dB for the post annealed device has been achieved by using high quality factor Ta2O5 based micro-ring resonator at pump power of merely 4mW. This reveal the functionality of post annealing treatment for optimizing loss performance of waveguides.

中文審定書 i
英文審定書 ii
致謝 iii
摘要 iv
Abstract v
目錄 vi
圖次 viii
表次 x
第一章 緒論 1
1.1非線性波導發展簡介 1
1.2非線性波導材料回顧 3
1.3五氧化二鉭材料簡介與過去應用回顧 6
1.4論文動機 7
1.5論文架構 9
第二章 包覆層製程改善優化五氧化二鉭光波導損耗 10
2.1波導結構設計 11
2.2元件製程簡介 12
2.2.1薄膜清洗 13
2.2.2薄膜沉積製程 14
2.2.3高溫氣氛熱退火(Annealing) 20
2.2.4薄膜光學特性量測(Annealing) 21
2.2.5旋轉塗佈光阻(Spin coating) 22
2.2.6電子束微影(E-beam lithography) 24
2.2.7顯影(Developer) 27
2.2.8蝕刻(Etch) 29
2.2.9電漿輔助化學氣相沉積(PECVD) 31
2.2.10切割(Dicing) 32
2.2.11拋光研磨(Polish) 33
2.3微環形共振腔品質因子量測 34
2.4探討PECVD與Sputter製作Cladding差異比較 38
2.5結論 46
第三章 五氧化二鉭光波導元件退火優化損耗 47
3.1元件後退火實驗 48
3.2四波混頻量測 53
3.2.1四波混頻介紹 54
3.2.2四波混頻轉換效率 56
3.2.3相位不匹配 57
3.2.4四波混頻轉換效率分析與量測 60
3.3非線性折射率量測 63
3.4結論 68
第四章 結論與未來展望 69
參考文獻 72

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