本研究的目的為分析氧化鎵釓-砷化鎵介面的變化。試片氧化層成份為三類：氧化鎵 (Ga2O3)，氧化釓 (Gd2O3) 以及氧化鎵-氧化釓 (Ga2O3-Gd2O3) 的混成結構。皆成長於n型 (100) 砷化鎵基板。實驗方法是對試片進行X光光電子能譜分析。我們以氬離子 (Ar+) 束撞濺 (sputtering) 試片，逐步清除其氧化層，每撞濺一次即以同步輻射光源所產生之 X-ray 進行量測。實驗中皆未觀察到有氧化砷的存在。試片 Ga2O3 之Ga(3d) 氧化態電子束縛能共有三個峰值位準，分別是21.5eV，21.0eV與20.3eV，氧O(1s) 電子的束縛能則為530eV。試片 (Ga2O3-Gd2O3) 之 Ga(3d) 電子的束縛能譜包含兩個峰值，21.0eV與20.3eV， 其O(1s) 亦有兩峰值，一是Ga-O 為532.2eV， 另一則是 Gd-O為530.1eV。 而 Gd2O3 試片之分析，發現也有鎵氧化物的存在，其 Ga(3d) 電子束縛能則皆是位於20.3eV處，該 O(1s) 能譜除了530eV處的Gd-O以外，亦明顯可看到在532eV處有一峰值。 本研究的結論是試片Ga2O3 的氧化層會有Ga+3 與不完全氧化的GaxOy。 (Ga2O3-Gd2O3) 的氧化層中則全是不完全氧化的GaxOy 結構，亦即 Ga+2 與 Ga+1。而 Gd2O3 試片則會因基板的Ga 擴散至氧化層中，並與 Gd2O3 競爭氧化而產生Ga+1 的不完全氧化物。

This work is to study the interface properties of Gallium-Gadolinium oxide / GaAs structures. The samples we probed were produced by depositing oxide films in situ on freshly grown n type GaAs (100) surface. Three different oxides were deposited : Ga2O3, Gd2O3, and (Ga2O3-Gd2O3) oxide mixture. Structural properties of the interfaces have been investigated by X-ray photoelectron spectroscopy (XPS). Using Ar+ sputtering to remove the oxide layer step by step, we are able to observe the depth profiles of these samples. No Asenic or Asenic oxides are observed at the interfaces of these samples. The Ga(3d) of Ga2O3 / GaAs interface shows three different oxidation states, whose binding energies are 21.5eV, 21.0eV and 20.3eV, respectively. The binding energy of O (1s) core level is about at 530eV. For (Ga2O3-Gd2O3) / GaAs, Ga(3d) peaks exhibit at 21.0eV and 20.3eV. Also, two O (1s) peaks were clearly observed: one is Ga-O at 532.2eV and the other is Gd-O at 530.1eV. For the Gd2O3 / GaAs, only one Ga(3d) peak shows at 20.3eV, and the O (1s) spectra exhibit two peaks related to Ga-O at 532eV and Gd-O at 530eV, similar to the data of (Ga2O3-Gd2O3) sample. In conclusion, the Ga2O3 / GaAs interface has a Ga2O3 and two non-fully oxidized GaxOy states (i.e. Ga+1, Ga+2). The (Ga2O3-Gd2O3) layer consists two non-fully oxidized GaxOy states. For the Gd2O3 / GaAs interface, the GaxOy (Ga+1) state is formed possibly by the competitive oxidation of Ga, which diffused from the GaAs substrate, with the Gd2O3.

第一章 介紹 1
第二章 實驗的原理與方法 5
2-1 實驗原理 5
2-2 同步輻射光源簡介 7
2-3 同步輻射光束線與光源的選取 11
第三章 實驗的準備與實驗步驟 18
3-1 樣品試片的準備 19
3-2 實驗的超高真空系統 21
3-3 實驗的進行步驟 24
第四章 實驗的結果與分析 26
4-1 L-SGM 光束線上的實驗 26
4-2 H-SGM 光束線上的實驗 32
第五章 結論 47
參考文獻 49

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