本論文研究以化學氣相沉積法(Chemical Vapor Deposition, CVD)，以Zinc 2,4-pentanedionate monohydrate[Zn(C5H7O2)2．H2O]作為鋅的前驅物(precursor)，成長(10-10)氧化鋅(Zinc Oxide, ZnO)磊晶薄膜於LiAlO2(100)基板上。本論文主要可分為兩個部份。第一部份為探討在不同的成長時間，ZnO薄膜之薄膜形貌與晶體品質之變化。第二部份為討論不同的成長壓力。
在第一部份中，改變不同的成長時間，嘗試成長出晶體結構良好與表面平整的ZnO(10-10)薄膜，由X光繞射儀(X-Ray Diffraction, XRD)顯示成長出高順向性<10-10>的ZnO薄膜。發現趨向高成長時間的實驗條件，可以成長品質較佳的ZnO薄膜。
在第二部份的討論則是在不同的成長壓力下，比較ZnO成長情況的差異。經由XRD與掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)分析得知，在較低壓力的實驗條件下(50~75torr)，可以在γ-LiAlO2(100)基板上成長出有長條形ZnO(10-10)與六角形ZnO(0002)結晶。較高壓力的試片均成長出高順向性<10-10>的薄膜。
由橫截式電子顯微鏡(Transmission election microscopy, TEM)圖形分析，ZnO薄膜沒有明顯的缺陷存在。ZnO薄膜與LiAlO2基板之界面有額外的界面層，這代表ZnO與LiAlO2在成長溫度650℃的情況下會發生反應。由TEM擇區繞射(Select Area Diffraction, SAD)圖形分析，可以得到ZnO薄膜與LiAlO2基板之間的磊晶關係為: [11-20]ZnO//[001]LiAlO2、[0001]ZnO//[010] LiAlO2。

In this study, epitaxial ZnO films were grown by chemical vapor deposition (CVD) on LAO(200) substrate. This dissertation is divided into two parts. In the first parts, the growth of ZnO films on various time was investigated. In the second part, the growth of ZnO films on various pressure was investigated.
In the first parts of the dissertation, high <10-10> orientation ZnO films were grown. For a long time growth, the grown ZnO films on LiAlO2 substrate have good crystallinity, as revealed by XRD
In the second parts, we discuss the difference of ZnO films by varying the growth pressure. It was found that both stripe-like ZnO(10-10) films and hexagonal ZnO(0002) grain existed at lower pressure(50~75 torr), as reveal by XRD and SEM. High <10-10> orientation ZnO films were grown at higher pressure.
From cross-section TEM result, we did not find considerable dislocations in the ZnO films, and the ZnO/LiAlO2 interface is shown to be smooth and with the formation of the interlayers, which represents that ZnO and LiAlO2 have some reactions below the temperature of 650 ℃. From the selected area diffraction (SAD) patterns, the orientation relationship between ZnO and LiAlO2 was determined as [11-20]ZnO//[001]LiAlO2、[0001]ZnO//[010]LiAlO2.

摘要 I
Abstract III
誌謝 IV
目 錄 V
表目錄 VII
圖目錄 VIII
第一章 緒論 1
1-1 前言 1
1-2 研究動機 3
第二章 文獻回顧與理論基礎 6
2-1 氧化鋅材料 6
2-1-1 氧化鋅基本性質 6
2-1-2 氧化鋅發光機制 8
2-2 非極性之氧化鋅 10
2-3 化學氣相沉積(CVD)原理 11
第三章 實驗方法及步驟 13
3-1 實驗流程 13
3-2 化學氣相沉積法(CVD) 14
3-2-1 實驗裝置 14
3-2-2 實驗步驟 15
3-3 氧化鋅磊晶薄膜分析 16
3-3-1 X光繞射(X-Ray Diffraction, XRD)分析 16
3-3-2 掃瞄式電子顯微鏡觀察與分析(Secondary Electron Microscopy, SEM) 17
3-3-3 原子力顯微鏡觀察與分析(Atomic Force Microscopy, AFM) 18
3-3-4 光子激發光分析(Photoluminescence, PL) 19
3-3-5 穿透式電子顯微鏡(TEM) 20
3-3-6 高解析電子顯微鏡(High Resolution Transmission Electron Microscopy, HRTEM) 21
第四章 實驗結果與討論 22
4-1 成長時間對氧化鋅品質的影響 22
4-1-1 XRD結構分析 23
4-1-2 AFM 薄膜表面形貌分析 27
4-1-3 SEM 薄膜表面形貌分析 29
4-1-4 PL 發光性質分析 32
4-2 生長壓力對氧化鋅品質的影響 34
4-2-1 XRD結構分析 35
4-2-2 SEM 薄膜表面形貌分析 37
4-2-3 PL 發光性質分析 40
4-3穿透式電子顯微鏡(TEM)觀察與分析 42
第五章 結論 45
第六章 未來工作 46
參考文獻 47

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