||In this study, epitaxial ZnO films were grown by chemical vapor deposition (CVD) on LAO(200) substrate. This dissertation is divided into two parts. In the first parts, the growth of ZnO films on various time was investigated. In the second part, the growth of ZnO films on various pressure was investigated.|
In the first parts of the dissertation, high <10-10> orientation ZnO films were grown. For a long time growth, the grown ZnO films on LiAlO2 substrate have good crystallinity, as revealed by XRD
In the second parts, we discuss the difference of ZnO films by varying the growth pressure. It was found that both stripe-like ZnO(10-10) films and hexagonal ZnO(0002) grain existed at lower pressure(50~75 torr), as reveal by XRD and SEM. High <10-10> orientation ZnO films were grown at higher pressure.
From cross-section TEM result, we did not find considerable dislocations in the ZnO films, and the ZnO/LiAlO2 interface is shown to be smooth and with the formation of the interlayers, which represents that ZnO and LiAlO2 have some reactions below the temperature of 650 ℃. From the selected area diffraction (SAD) patterns, the orientation relationship between ZnO and LiAlO2 was determined as [11-20]ZnO//LiAlO2、ZnO//LiAlO2.