本研究主要的對象是由有機金屬化學氣相磊晶法所成長出的氮化鋁鎵/氮化鎵高電子遷移率異質結構，利用樣品在結構上的些許差異，經由光性與磁電性實驗分析結構，並針對此結構上的差異來探討壓電效應所產生的影響，進而對往後結構上的設計有參考價值。附錄部分，收錄電子束蒸鍍，對於日後欲使用之人有幫助。

In this study, we discuss AlGaN/GaN high electron-mobility heterostructs grown by metal organic chemical vapor deposition technique. We analyzed the samples by optical and magnetoelectrical experiments to probe the dependence of the piezoelectric effect on the structural difference. We hope our results may be useful for the design of nitride heterostructures. The E-beam evaporator operation manual given in this thesis may be useful for future users.

Chapter 1 Introduction
1-1 Introduction 1
Chapter 2 Theory
2-1 The Electrical Properties of Two-dimensional Electron Gas 3
2-2 Strain and Relaxation and the Piezoelectric Effect 4
2-3 Hall Effect 7
2-5 Photoluminescence 8
2-5-1 Photoluminescence Mechanism of GaN 9
2-5-2 Band Gap and FWHM 9
2-6 Shubnikov-de Haas Effect 11
2-7 Quantum Hall Effect (QHE) 13
Chapter 3 Experiment System
3-1 Sample Cleaning 20
3-2 Evaporation Process 20
3-3 Current-Voltage (I-V) Measurement 20
3-4 Hall Measurement 21
3-5 Photoluminescence 21
3-6 X-Ray measurement 21
Chapter 4 Experimental Results and Discussions
4-1 Samples 27
4-2 Uniformity Analysis
4-2-1 Photoluminescence Measurement 27
4-2-2 Scanning Electron Microscope (SEM) Measurement 27
4-3 X-ray Measurements 28
4-4 Transmission Electron Microscope (TEM) Measurement 28
4-5 Hall Effect Measurement 28
4-6 Photoluminescence Measurement
4-6-1 67 K PL Spectrum 28
4-6-2 Temperature Dependence of Samples PL Spectrum 29
4-6-3 Excitation Dependence of Sample PL Spectrum 29
4-7 Shubnikov-de Haas Measurement 29
4-8 Conclusion 32
APPENDIX
A. Some table of Structural parameters
TABLE Ⅰ. Structural parameters, Bohr radius, and binding
energy for AlN, GaN, and InN 54
TABLE Ⅱ. Spontaneous polarization, piezoelectric and
dielectric constants of AlN, GaN, and InN 54
TABLE Ⅲ. Measured and calculated elastic constants of
wurtzite and cubic AlN, GaN, and InN 55

B. E-beam evaporate 56

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