中文摘要

本文將討論以multi-step磊晶技術利用電漿輔助分子束磊晶在c-sapphire上成長GaN的結構與表面特性，有鑑於過去成長GaN所產生的缺陷，思考出與以往不同的成長機制來解決結構與表面特性上的問題。文中將細述multi-step的磊晶方式，最終以實驗證實我們同時在系列樣品當中，由XRD得到較良好的結構，也由SEM與AFM得到較平坦的表面特性。在XRD ( 0002 ) rocking curve方面，最大半高寬維持在過去的60~100( arcsec )範圍內，而( 10 2 )的實驗部分，降低至700~1200 ( arcsec )，而這方面問題的改善，大幅解決結構上的缺陷問題；另外在表面的平整度上，也是從過去的14~30 ( nm )大幅度的降低至1.6 ( nm )以下，因此證實multi-step成長方式對結構與表面特性的提升是具有相當的成果。

Abstract

In this literary, we discuss with structure and morphology improvement of GaN epilayer on c-sapphire by multi-step method in molecular-beam epitaxy. Our research is caused for the critical results of defect in GaN epilayer and rough surface morphology. In order to solve these problems we used a novel technique which we called multi-step method. In this thesis, the results of X-ray, SEM, AFM all demonstrated the achievement in our composition. However, we obtained the results of full width of half maxima (FWHM) of (0002) and (10 2) XRD rocking curves with 60~120 arcseconds and 700~ 1200 arcseconds from a series of multi-step samples respectively. Comparing with previous measurement, multi-step method is relatively superior, and the measurement of AFM roughness is under 2 nm from the series of multi-step samples. If we discuss the flat area further, we can get smoother surface which roughness is about 0.4 nm. It is obviously to recognize the flat and rough regions, but in SEM image we made sure that the flat region occupied the greater part of surface. So, in this literary we verified that the method of multi-step can improve the structure and morphology of GaN by molecular-beam epitaxy.

目錄
中文摘要………………………………………………………………1
英文摘要………………………………………………………………2
第一章 前言…………………………………………………………3
第二章 實驗基本理論………………………………………………8
2-1 霍爾效應…………………………………………….8
2-2 光致螢光原理……………………………………….10
2-3 X-ray繞射原理……………………………………...13
2-4 掃描式電子顯微鏡………………………………….15
2-5 原子力顯微鏡……………………………………….16
第三章 實驗儀器與步驟……………………………………………19
3-1 霍爾量測…………………………………………….19
3-1-1 量測儀器………………………………...19
3-1-2 樣品試片的製作………………………...20
3-1-3 數據量測………………………………...22
3-1-4 數據計算………………………………...23
3-2 光致螢光量測……………………………………….24
3-2-1 量測儀器………………………………...24
3-2-2 實驗步驟………………………………...25
3-3 X-ray繞射分析……………………………………..29
3-4 掃描式電子顯微鏡的量測………………………….31
3-4-1 實驗儀器………………………………...31
3-4-2 實驗步驟………………………………...32
3-5 多功能原子力顯微鏡的量測……………………….35
3-5-1 實驗儀器………………………………...35
3-5-2 實驗步驟………………………………...36
第四章 實驗結果分析與討論……………………………………….39
4-1 實驗系列樣品……………………………………….39
4-2 X-ray繞射分析……………………………………...42
4-3 掃描式電子顯微鏡的分析………………………….49
4-4 原子力顯微鏡的結果與分析……………………….60
4-5 微光致螢光分析…………………………………….81
4-6 霍爾效應之結果分析……………………………….85
4-7 討論………………………………………………….87
第五章 總結…………………………………………………………91
參考資料………………………………………………………………93

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