本論文的研究目的為研製製程容易且容易積體化的環形共振腔，搭配環流鏡來做為反射鏡面的應用來設計半導體雷射。材料方面，我們使用1.55微米對稱型結構之砷磷化鎵銦(InGaAsP)多重量子井結構之磊晶片。
光罩設計方面，我們應用環流鏡與劈裂鏡面設計了四種半導體雷射,結合多模干涉器與曲率半徑為160、260微米的環流鏡，考量光電波導中的彎曲損耗和吸收損耗，期望找出最適合的曲率半徑，搭配元件的輸入/輸出,做了傾斜7度的設計，避免光輸出由自然劈裂面處反射回環型共振腔造成干擾。另外應用環形共振腔與劈裂鏡面設計了兩種半導體雷射，使其可以視為全反射鏡面外，還具有波長選擇功能及濾波功\能。
元件製程方面，我們使用新的蝕刻方法，是利用ICP-RIE乾蝕刻搭配溼蝕刻；我們先用ICP-RIE乾蝕刻約50%的深度，然後用多步驟濕式蝕刻技術來接近所需的蝕刻深度，在多模干涉器的部份則多加一步濕式蝕刻增加深度。最後利用HBr:HCl:H2O2:H2O =5:4:1:70的配方，來修飾波導的側壁，使其表面更光滑以降低元件的散射損耗。
元件特性方面，在長度1000微米直線波導雷射可以得到20μW/mA的微分量子效率，而環流鏡因為在轉彎處會有很大的損耗產生，導致沒有雷射訊號產生。

The purpose of this thesis is to develop ring resonators with simple processes and integration. We used loop mirror as a reflector in the semiconductor lasers. In the material, a 1.55μm symmetric quantum well InGaAsP epi-layer is used to fabricate the lasers.
In device design, we designed four kinds of semiconductor lasers by using loop mirror and cleaved facet. The curvature radiuses are 160 and 260μm that are presented to investigate bending loss and material loss. In the input/output we had an inclined 7 degree to avoid interference. We also designed another two semiconductor lasers by using ring resonator and cleaved facet. Applying the resonance characteristic of ring resonator can achieve wavelength selection and filtering.
In fabrication process, we developed new etching technique. The ICP-RIE dry etching and wet etching method were used in the process. Fist we etched half of the total depth by ICP-RIE dry etching. And then the multi-step technique was used to approach the expecting depth. Beside, we had extra deep wet etching process in MMI. Finally, we used the etching solution HBr:HCl:H2O2:H2O =5:4:1:70 to smooth the sidewall and reduce the scattering loss.
In device characteristic, we obtained differential quantum efficiency of 20μW/mA for the 1000μm straight waveguide laser. We can not observe laser characteristics for the loop mirror laser, partly because of the high loss in bending section.

第一章 簡介……………………………………………………..…...1
1-1 前言………………………………………………………….....1
1-2應用特殊分光比例及對稱式多模干涉耦合器MMI…….........3
1-3 研究動機…………………………..…………………………...3
1-4 論文架構……………………………………………………….4
第二章 環流鏡與環型共振腔之設計與原理……….…….…5
2-1 環流鏡原理與模擬………………………………………….…5
2-2 環型共振腔原理…………………………………………….…8
2-3 環型共振腔傳輸型式……………………...…………….…...11
第三章 多模干涉器之原理與模擬設計…………….…...…13
3-1 MMI之原理…………………………………………….…..13
3-2 MMI之設計與模擬結果..…………………….…………....18
第四章 光罩修改與元件設計………………………………21
4-1 光罩內容…………………………………………………….21
4-2 元件設計…………………………………………………….21
4-2-1 應用環流鏡之半導體雷射…………………….21
4-2-2 應用環型共振腔之半導體雷射……………….23
第五章 元件製程…………………………………….…...…28
5-1 磊晶片資料………………………………………………….28
5-2 製程流程圖………………………………………………….31
5-3 製程示意圖………………………………………………….32
5-4 製程步驟…………………………………………………….39
5-5 電性量測……………………………………………………..
第六章 結論…………………………………….…...………58
參考文獻………………………………………………………59
附錄 ICP-RIE乾蝕刻製程.………………………………....60

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