本論文主旨在利用電子束微影術，完成邊射型雷射、二維光子晶體微共振腔以及用來量測量子點之金屬奈米電極之研製。我們以新架設之電子束微影術之系統，成功定義出各種陣列圖案，測試出其最小可寫線寬約40-50奈米，最大可寫範圍為250μm × 250μm。並於分子束磊晶成長的InGaAs/InAlGaAs InP磊晶片上，利用電子束微影術製作邊射型雷射與二維光子晶體微共振腔。
在邊射型雷射 (DBR Laser) 方面，我們設計MMI 共振腔的長度為90μm以滿足磊晶片的發光波長以及模態，並在MMI 旁設計一組左右不對稱的DBR反射鏡，加上適當的反射鏡厚度 Ds為361nm及空氣間距 Da 為 388nm ，配合金屬掀離及乾蝕刻技術，並蒸鍍上電極完成元件的製作，由I-V量測得知元件的阻值約為16歐姆。
在二維光子晶體微共振腔方面，我們設計TE極化不存在的光子能隙，結構為三角晶格方式排列之空氣圓柱。圓柱半徑r為456nm，晶格常數 A為1137nm，其能帶範圍為1517.0 – 1617.8 nm。並在此光子晶體中製作一點缺陷形成單點缺陷之微共振腔，其缺陷態介於1546.32nm~1547.74nm。製程上，以電子束微影定義出我們設計的圖形後，利用金屬掀離做出蝕刻遮罩，配合乾蝕刻技術將圖形轉移至底下的介電質層及磊晶層，完成二維光子晶體。由微光激螢光的量測中，可看到在1547nm (a/λ=0.74)的defect mode、1351 nm (a/λ= 0.85)的surface state與1480nm (a/λ= 0.78)的standing wave。其中Defect mode的Q值最大，約為400。

In this thesis, we use E-Beam lithography to finish the process of DBR laser, 2D Photonic crystal, and Metallic nanoelectrodes. We use the new E-Beam system to define array patterns. By this test, we obtain the minimum linewidth of 50nm, and the maximum working range is 250μm*250μm.
We fabricated the 2D photonic crystal microcavity and DBR laser on the InGaAs/InAlGaAs which was grown by molecular beam epitaxy (MBE) on InP substrate.
For the DBR laser, the length of Multi-mode Interference (MMI) was 90μm to satisfied the emission wavelength and optical modes. We apply a coupled DBR reflector on both sides of MMI. The mirror width was 361nm and the air gap was 388nm.
For the 2D photonic crystal (2D PhC) microcavity, a triangular array of air columns was adopted. The lattice constant and air columns radius are 1137nm and 456nm, respectively. The TE-mode photonic band gap of this structure is corresponding to wavelength range in 1517.01 nm~1617.81 nm. We leave a single defect in the 2D PhC to form 2D PhC microcavity and the corresponding defect modes are 1546.32nm and 1547.74nm. The Micro-PL measurement shows that a defect mode at 1547nm (a/λ=0.74), a surface state at 1351nm (a/λ=0.85), and a standing wave at 1480nm (a/λ=0.78). The maximum Q value is about 400 for the defect mode.

第一章 緒論
1-1 電子束微影簡介...................................................................1
1-2 光子晶體簡介...................................................................... 2
1-3 一維光子晶體...................................................................... 6
1-4 二維光子晶體...................................................................... 6
1-5 論文架構.............................................................................. 6

第二章 DBR雷射元件設計與模擬
2-1 磊晶片結構.........................................................................7
2-2 DBR雷射 元件模擬......................................................... 9
2-3 DBR雷射元件設計......................................................... 13

第三章 二維光子晶體元件設計與模擬
3-1 二維光子晶體元件模擬.................................................. 14
3-2 二維光子晶體元件設計.................................................. 24

第四章 DBR雷射元件製程
4-1 儀器架構.......................................................................... 25
4-2 DBR雷射製程................................................................. 26
4-3 製程步驟與實驗結果...................................................... 27
第五章 二維光子晶體元件製程
5-1 二維光子晶體製程.......................................................... 37
5-2 製程步驟與實驗結果...................................................... 38

第六章 量測結果................................................................................. 46

第七章 結論......................................................................................... 53

參考文獻................................................................................................. 55

附錄A.金屬奈米電極之研製................................................................ 57

附錄B.電子束微影的各項可調整參數................................................ 60

附錄C.電子束微影的最小可寫線寬.................................................... 62

附錄D.二次電子束微影技術................................................................ 64

附錄E.實驗中所使用的儀器與藥品一覽表......................................... 66








圖目錄
第一章 緒論

圖1-1 電子束微影系統裝置圖................................................1
圖1-2 一維、二維與三維光子晶體示意圖........................... 3
圖1-2 光子晶體能帶圖........................................................... 4
圖1-3 (a)具有線缺陷的二維光子晶體
(b)具有點缺陷的二維光子晶體................................. 5

第二章DBR雷射元件設計與模擬

圖2-1 C266 PL光譜圖............................................................ 7
圖2-2 DBR邊射型雷射模擬結構示意圖.............................. 9
圖2-3 反射率跟DBR反射鏡數量及空氣間隔寬度關係圖.. 10
圖2-4 MMI中光場強度分佈圖............................................. 11
圖2-5 MMI長度為 時..................................................... 12
圖2-6 MMI長度小於 時................................................. 12
圖2-7 DBR雷射設計圖......................................................... 13

第三章 二維光子晶體 元件設計與模擬

圖3-1 (a) 四角晶格(b)三角晶格(c)蜂巢晶格.......................... 14

圖3-2 TLAC結構示意圖......................................................... 15

圖3-3 TLAC結構之unit cell................................................... 16

圖3-4 六角晶格排列光子晶體第一布里淵區........................ 16

圖3-5 TLAC結構R/A比與光子能隙關係圖......................... 17

圖3-6 TLAC結構材料空氣折射率之差與光子能隙關係圖.. 17

圖3-7 以C266為基板之R/A比與光子能隙之關係............. 18

圖3-8 完美TLAC模擬結構示意圖........................................ 19

圖3-9 完整TLAC結構TE及TM光子能帶圖..................... 19

圖3-10完整TLAC結構TE光子能帶圖................................ 20

圖3-11完整TLAC結構TE光子能帶放大圖........................ 20

圖3-12 含有單一點缺陷之TLAC模擬結構圖...................... 21

圖3-13 使用supercell而縮小的第一布里淵區...................... 22

圖3-14 模擬含單一點缺陷TLAC結構所使用之supercell…23

圖3-15 含單一點缺陷TLAC結構之TE光子能帶圖........... 23

圖3-16 二維光子晶體微共振腔設計圖.................................. 24

第四章 DBR雷射元件製程

圖4-1 儀器裝置圖.................................................................... 25

圖4-2 製程示意圖.................................................................... 26

圖4-3塗佈光阻後的磊晶片..................................................... 27

圖4-4 顯影後的OM圖............................................................. 28

圖4-5 經lift-off後之DBR雷射上視圖.................................. 29

圖4-6 經lift-off後之DBR反射鏡.......................................... 30

圖4-7 經RIE蝕刻後的反射鏡 (左方兩組)............................ 31

圖4-8 經RIE蝕刻後的反射鏡 (右方三組)............................ 31

圖4-9 經乾蝕刻後的DBR反射鏡側視圖.............................. 32

圖4-10 經乾蝕刻後的DBR共振腔之側壁( sidewall ).......... 33

圖4-11 經ICP-RIE蝕刻後的單模波導................................... 33

圖4-12 ICP蝕刻後的DBR雷射全圖...................................... 34

圖4-13 HF移除介電質膜後的圖形......................................... 34

圖4-14 Spin PMGI 轉速與厚度關係表................................... 35

圖4-15 DBR雷射元件之I-V Curve......................................... 36



第五章 二維光子晶體 元件製程

圖5-1 製程示意圖.................................................................... 37

圖5-2塗佈光阻後的磊晶片..................................................... 38

圖5-3電子束曝光並顯影後的OM/SEM圖............................. 39

圖5-4鍍上Cr 尚未Lift-Off的SEM圖.................................... 40

圖5-5經ACE lift-off後之光子晶體.......................................... 40

圖5-6經RIE Dry Etching後之光子晶體................................... 41

圖5-7經ICP Deep Etching後之光子晶體................................. 42

圖5-8 ICP對磊晶片之蝕刻率..................................................... 43

圖5-9經HF Lift-Off後之光子晶體........................................... 44

圖5-10完成之光子晶體微共振腔側視圖.................................. 44

圖5-11 完成之光子晶體微共振腔放大圖................................. 45

圖5-12完成之光子晶體微共振腔上視圖.................................. 45



第六章 量測結果

圖6-1 量測之儀器架構............................................................. 46

圖6-2 量測試片之CCD圖形................................................... 46

圖6-3 量側樣品之Background Data........................................ 47

圖6-4 532雷射所產生的3倍頻訊號...................................... 47

圖6-5 蝕刻150秒的波長/功率光譜圖.................................... 48

圖6-6 蝕刻150秒的能量/功率光譜圖.................................... 48

圖6-7 蝕刻120秒的波長/功率光譜圖.................................... 49

圖6-8 蝕刻120秒的能量/功率光譜圖.................................... 49

圖6-9 蝕刻90秒的波長/功率光譜圖...................................... 50

圖6-10 蝕刻90秒的能量/功率光譜圖.................................... 50

圖6-11 光子晶體微共振腔的二維能帶模擬及其放大............ 52
圖6-12 光子晶體微共振腔的三維能帶模擬及其放大.............. 53

表目錄

第二章 元件設計與模擬
表2-1 C266 磊晶結構表............................................................ 8

第六章 量測結果
表6-1 不同ICP條件的峰值、半高寬與Q值整理................ 51

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