本篇論文主要利用共蒸鍍方式，成長 CuInSe2 (簡稱CIS) 主吸收層，並利用不?袗?基板，製作完整可撓式薄膜式太陽電池，元件結構為Al/ZnO:Al/ZnSe(CdS)/CuInSe2/Mo/SiO2/Stainless Steel。
論文之研究，吾人利用二階段方式成長主吸收層CIS薄膜，並以片電阻量測結果，設定鍍膜參數，進行元件製程。於AM1.5、100mW/cm2 模擬光源下，比較不同製程條件之元件，結果顯示主吸收層CIS薄膜厚度由500nm增加至1.5μm時，開路電壓與短路電流皆有所提升，比對光吸收係數，求得所需膜厚為1μm可吸收大部分之入射光。而採用三階段方式成長之CIS薄膜，表面較為平整，元件有較佳的表現。組成方面，利用具定比線試片，比較在Cu-rich與In-rich條件下成長之CIS所製成之元件`。隨緩衝層CdS的加入，有效改善元件CIS與AZO間之接面，漏電流問題得已處理，填充因子也有所提升。
採相同元件結構鍍製於不?袗?與玻璃基板上，玻璃基板結果：開路電壓為 0.38 V、短路電流密度 30.5 mA/cm2 、填充因子FF = 38.6 %，轉換效率為 4.5 %，不?袗?基板結果：開路電壓為 0.2 V、短路電流密度 41.7 mA/cm2 、填充因子FF = 31.2 %，轉換效率為 2.6 %。

This paper describes an investigation into the fabrication of absorber layer CuInSe2 films by co-evaporation process. And we used the stainless steel substrates to manufacture Al / ZnO:Al /ZnSe(CdS) / CuInSe2 / Mo /SiO2 / Stainless Steel(SS) flexible thin-film solar cell.
In this study, we fabricated the main absorber layer CIS thin film by co-evaporation process including two steps, and CIS thin films parameters were estimated by sheet resistance. Under one-sun (AM1.5,100mW/cm2) conditions solar simulator, we compared the solar cell with different thickness of absorber layer, co-evaporation process and composition to improve solar cell performance.
The energy conversion efficiency of the CIS thin-film solar cell (Al/ AZO/ CdS /CIS/Mo/ SLG) was 4.5﹪(Voc =0.38 V，Jsc = 30.5 mA ，FF = 38.6 ﹪), flexible solar cell (Al/AZO/CdS/CIS/Mo/SiO2/SS) was 2.6%( Voc =0.2 V，Jsc = 41.7 mA ，FF = 31.2 %).

目錄
第一章 簡介 1
1.1前言 1
1.2 CUINSE2太陽電池之研究發展 3
1.3 CUINSE2薄膜性質 4
1.4元件設計分析與探討 7
1.4.1元件結構設計 7
1.4.2 元件轉換效率之基本參數 11
1.4.2各層薄膜之特性 12
1.5 研究目的 25
第二章 薄膜製程系統、實驗步驟 26
2.1 薄膜製程系統 26
2.1.1 三槍磁控濺鍍系統： 26
2.1.2 共焦磁控濺鍍系統： 27
2.1.3 分子束蒸鍍系統I (Molecular Beam Deposition) 28
2.1.4 分子束蒸鍍系統II 29
2.2 元件製造流程與步驟 31
2.2.1 不?袗?基板之處理 31
2.2.2 SiO2薄膜之鍍製 32
2.2.3 鉬薄膜之鍍製 33
2.2.4 共蒸鍍成長CIS薄膜 33
2.2.5 硒化鋅之鍍製 35
2.2.6 CdS之鍍製 37
2.2.6 ZnO:Al之鍍製 37
2.2.7 鋁金屬電極成長 37
2.2.8 硒化法成長CIGS薄膜 38
第三章 薄膜特性分析方法與儀器 40
3.1 X-RAY 繞射儀 40
3.2掃描式電子顯微鏡 (SEM) 40
3.3霍爾量測 (HALL MEASUREMENT) 40
3.4四點探針 (FOUR-POINT PROBE) 40
3.5熱探針量測 (HOT PROBE) 41
3.6吸收光譜儀 (SPECTROPHOTOMETER) 42
3.7反射光譜儀 (SPECTRAL REFLECTANCE MEASUREMENT) 43
3.8電流-電壓特性曲線量測 (I-V MEASUREMENT) 43
3.9 Α -STEP 量測 43
第四章 實驗結果與討論 44
4.1 二氧化矽之鍍製 44
4.2 MO金屬背電極 46
4.3 CUINSE2主吸收層 51
4.4 ZNSE 緩衝層 64
4.5 AZO透光層 66
4.6 AL金屬上電極 71
4.7 硒化法合成之CIGS薄膜 72
4.8元件之製作與元件量測 76
第五章 結論 98
第六章 參考文獻 100

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