水資源是地球十分重要之自然資源之一，近年來由於工業與家庭所排放之汙廢水不斷注入大自然，造成水源污染問題日益嚴重，所以如何即時監控水源品質已是非常重要之研究課題，其中水資源所含氧氣之溶解量(溶氧)即為評估水質的重要指標項目之一。傳統之商用溶氧感測儀器主要可分為化學滴定及光學分析兩種檢測方式，雖然皆具有高感測靈敏度與準確度，但其價格昂貴、體積龐大、無法批次製造及無法即時監控的缺點，將會限制其發展。
本論文利用可批次製造之微機電系統技術開發一種以延伸式閘極場效電晶體為基礎之溶氧微感測器，不同溶氧濃度所產生之不同閘極電位可由鉻/金感測電極所輸出，為了進一步提高元件之感測靈敏度，一種具高氣體滲透率之聚苯乙烯溶氧感測層將被採用。本論文主要製程步驟包含四次黃光微影及四次薄膜沉積製程，研究中將探討分析電晶體通道寬長比、源/汲極幾何圖形與聚苯乙烯溶氧感測層對溶氧微感測器之特性影響。
本論文所開發之延伸式閘極場效電晶體溶氧微感測器晶片尺寸為11 mm×13 mm×0.5 mm，感測區域之面積為1 mm×1 mm。根據量測結果顯示，於2 ~ 6 ppm溶氧濃度量測範圍下，最佳化溶氧微感測器之感測靈敏度與線性度分別高達35.36 mV/ppm與98.83 %，感測響應時間僅為180~200 sec，故適合發展為即時監控之溶氧感測微系統。

Water resource is one of the most important natural resources on earth. In recent years, due to the discharges of large industrial and domestic waste-water into the nature, water pollution problem is getting more and more serious and how to monitor the quality of water in real time has become a very important research issue. The dissolved oxygen is one of the critical indexes for evaluating the quality of water. Although the conventional dissolved oxygen detectors presented a high sensitivity and high accuracy, the high cost, large dimension, low capability of batch fabrication and real-time monitoring will limit their applications.
In this thesis, an extended-gate field-effect transistor (EGFET) based dissolved oxygen microsensor is developed utilizing micro-electromechanical system (MEMS) technology. The gate voltages of EGFET under different concentrations of dissolved oxygen can be detected by the Cr/Au sensing electrode. To further enhance the sensitivity of the proposed microsensor, a polystyrene layer with very high permeation rate of the dissolved oxygen gas is adopted and coated on the surface of Cr/Au layer. The main processing steps of the presented microsensor involve four photolithographic and four thin-film deposition processes. The influence of the channel’s width/length ratio, source/drain geometry and polystyrene additional layer on the sensitivity of the EGFET based dissolved oxygen microsensor are investigated in this study.
The chip size of the implemented dissolved oxygen microsensor is 11 mm×13 mm× 0.5 mm and the sensing area is 1 mm×1 mm. As the dissolved oxygen concentration varies from 2 ppm to 6 ppm, a very high sensitivity (35.36 mV/ppm) and sensing linearity (98.83%) of the proposed EGFET microsensor can be demonstrated. In addition, the response time of the presented dissolved oxygen microsensor is only about
III
180~200 seconds, hence it is very suitable for developing a real-time monitoring microsystem.

摘要.................................................................................................................................I
Abstract..........................................................................................................................II
致謝..............................................................................................................................IV
目錄...............................................................................................................................V
圖目錄........................................................................................................................VII
表目錄...........................................................................................................................X
第一章 緒論.................................................................................1
1-1 前言.............................................................................................................1
1-2 研究動機.....................................................................................................3
1-3 實驗方法及論文架構...............................................................................4
第二章 離子感測器之原理介紹............................................................6
2-1 離子感測器種類........................................................................................6
2-1-1 離子選擇電極..................................................................................6
2-1-2 離子感測場效電晶體....................................................................7
2-1-3 延伸式閘極感測場效電晶體.........................................................9
2-2 延伸式閘極感測場效電晶體原理介紹...................................................11
2-2-1 吸附鍵結模型...................................................................................12
2-2-2 能斯特方程式...................................................................................13
2-2-3 延伸式閘極感測場效電晶體工作原理...........................................14
第三章 溶氧感測器之設計與製作...............................................................18
3-1 延伸式閘極感測場效電晶體結構與光罩佈局設計.................................18
3-2 延伸式閘極感測場效電晶體製程整合設計.............................................23
3-2-1 金屬層之選用.................................................................23
3-2-2 延伸式閘極場效電晶體製作流程.......................................24
VI
3-2-3 詳細製程步驟與參數..........................................................25
3-3 溶氧氣體滲透薄膜配製..........................................................................32
3-3-1 實驗藥品材料與配製方法……...........................................33
3-3 量測系統..................................................................................................34
第四章 結果與討論....................................................................................36
4-1 延伸式閘極場效電晶體量測分析.........................................37
4-1-1 離子佈植對電晶體之影響分析..........................................37
4-1-2 源、汲極佈植圖形與通道寬長比對電晶體之影響分析...........38
4-2 溶氧感測特性量測分析......................................................41
4-2-1 感測靈敏度及線性度分析.................................................42
4-2-2 感測表面具氣體滲透膜之感測靈敏度及線性度分析.............52
第五章 結論與建議....................................................................................63
5-1 結論...........................................................................................................63
5-2 建議.......................................................................................................64
參考文獻......................................................................................................................66
附錄..............................................................................................................................70

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