本研究為實現可操作於高頻段之高頻表面聲波元件，以電子束微影技術縮小指叉式電極的線寬，並以IDT/ZnO/AlN/Si3N4/Si的結構製作表面聲波元件以提高元件之聲波波速。
本研究以射頻磁控濺鍍法在Si3N4/Si上沉積氮化鋁(AlN)及氧化鋅(ZnO)壓電薄膜，藉由調變沉積參數進行物性分析以獲得較佳的壓電薄膜，並製作AlN/Si3N4/Si、ZnO/Si3N4/Si、ZnO/AlN/Si3N4/Si結構做為比較。使用鋁(Al)作為電極，並以電子束微影定義線寬為490 nm、延遲線為32λ及64λ之IDT圖形，再以ICP乾式蝕刻完成電極圖形，並去除電子阻劑後完成SAW元件。研究結果顯示，以IDT/ZnO/AlN/Si3N4/Si為結構，其延遲線為32λ所完成之元件，其中心頻率為2.33 GHz，而插入損失為-23.5 dB。與單壓電層元件做比較，其波速與頻率響應均有優化的表現。

In this study, high-frequency surface acoustic wave (SAW) devices were fabricated by using e-beam lithography technology to contract IDTs. The IDT/ZnO/AlN/Si3N4/Si structure was used to increase acoustic wave velocity and electromechanical coupling coefficient.
To fabricate SAW devices, the piezoelectric thin films (AlN and ZnO) were deposited on Si3N4/Si substrate which adopted the RF magnetron sputtering method. The crystalline characteristics were investigated and optimized by adjusting the sputtering parameters. The structures of SAW devuces with AlN/Si3N4/Si, ZnO/Si3N4/Si and ZnO/AlN/Si3N4/Si were fabricated and the frequency response were compared. After the piezoelectric thin films were formed, the Al thin films were deposited on the piezoelectric thin films using DC sputtering system. Then, the IDT electrodes were achieved for line width of 490 nm and delay line width of 32λ and 64λ which using e-beam lithography technology and ICP etching technology. The center-frequencies of 2.33 GHz and the insertion loss of -23.5dB can be obtained through SAW devices of IDT/ZnO/AlN/Si3N4/Si structure. Comparing with SAW device of single piezoelectric thin film, the dual-piezoelectric thin films devices showed optimal frequency response.

中文審定書 i
摘要 iii
Abstract iv
目錄 v
圖目錄 viii
表目錄 x
第一章 前言 1
1.1 研究背景與動機 1
1.2 表面聲波元件 2
1.3 研究內容 5
第二章 理論分析 6
2.1 壓電效應 6
2.1.1 壓電效應 7
2.1.2 壓電材料 8
2.2 氮化鋁結構與特性 9
2.3 氧化鋅之特性與結構 12
2.4 反應性射頻磁控濺鍍原理 14
2.4.1 輝光放電 14
2.4.2 磁控濺鍍 15
2.4.3 射頻濺鍍 17
2.4.4 反應性濺鍍 17
2.5 薄膜成長機制 18
2.6 電子束微影製程技術 20
2.7 乾式蝕刻製程 21
2.8 表面聲波元件理論與特性 22
2.8.1 表面聲波元件基本設計與特性 23
2.8.2 Rayleigh wave 25
2.9 表面聲波元件種類 27
2.9.1 共振型表面聲波元件 27
2.9.2 延遲型表面聲波元件 28
2.9.3 表面聲波濾波器 28
2.10 表面聲波元件參數性質 30
2.10.1 聲波波速 30
2.10.2 插入損失 30
2.10.3 機電耦合係數 32
第三章 實驗 33
3.1 實驗流程 33
3.2 基板清洗 35
3.3 薄膜沉積 35
3.3.1 射頻磁控濺鍍系統 35
3.3.2 直流磁控濺鍍系統 39
3.4 薄膜物性分析 40
3.4.1 X-ray 繞射分析 40
3.4.2 掃描式電子顯微鏡 41
3.4.3 原子力顯微鏡 42
3.5 調變壓電層結構 43
3.6 電子束微影製程 43
3.7 ICP乾式蝕刻製程 45
3.8 SAW元件網路分析儀量測 46
第四章 結果與討論 47
4.1 於Si3N4上沉積AlN薄膜之特性分析 47
4.1.1 濺鍍功率 47
4.1.2 濺鍍壓力 49
4.2 於Si3N4上沉積ZnO薄膜之特性分析 52
4.2.1 濺鍍壓力 52
4.3 於AlN上沉積ZnO薄膜之特性分析 55
4.3.1 濺鍍功率 55
4.3.2 濺鍍壓力 58
4.4 電子束微影製程 60
4.5 ICP蝕刻 62
4.6 元件頻率響應 63
第五章 結論 68
參考文獻 70

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