使用不同負載阻抗的X參數模型之預測方式，相對於傳統負載拉移方式，能更快速且廣泛去預測出矽鍺異質接面電晶體的等功率圓，用以獲得最佳輸出功率之負載阻抗。
矽鍺異質接面電晶體操作於崩潰區時，較操作於一般工作區，元件輸出功率具有較高的線性度。然而，輸出功率、增益與功率附加效率的功率性能較為下降。
本論文設計矽鍺異質接面電晶體功率放大器應用於崩潰區，以消耗功率去換取其線性度的提升，量測其功率特性。

The prediction method of power contours from X-parameter model at different load impedance, this method is faster and wider than the conventional Load-pull method to predict SiGe HBT’s power contour , get optimization load impedance.
In SiGe HBT , the linearity of output power operating in avalanche breakdown region is more higher than operating in working area. However, output power, gain, and PAE are slightly degraded. This investigation designs SiGe HBT power amplifier operating in avalanche breakdown region, exchanges dissipation power for high linearity, meases the characterists of the power amplifier.

論文審定書 i
誌謝 ii
中文摘要 iii
Abstract iv
目錄 v
圖目錄 vii
表目錄 ix
第一章 緒論 1
1.1 研究背景與簡介 1
1.2 論文架構 3
第二章 功率放大器與X參數模型預測 4
2.1 設計功率放大器方式 4
2.2 功率放大器特性參數 4
2.3 X參數基本介紹 10
2.4 X參數模型預測功率與最佳輸出功率阻抗 11
第三章 異質接面電晶體之功率放大器 15
3.1 矽鍺異質接面電晶體分析 15
3.2 功率放大器偏壓點選擇 16
3.3 功率放大器設計流程 19
3.4 功率放大器架構 21
第四章 功率放大器量測與模擬結果 22
4.1 簡介 22
4.2 量測儀器與方式 22
4.3 功率放大器量測結果 25
4.4 X參數模型模擬與量測比較 35
第五章 結論與未來展望 37
參考文獻 38

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