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博碩士論文 etd-0730118-120729 詳細資訊
Title page for etd-0730118-120729
論文名稱
Title
使用 X參數模型預測最佳輸出功率之阻抗
The Prediction of the Optimal Output Power Impedance with the X-parameter Model
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
70
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2018-07-18
繳交日期
Date of Submission
2018-08-30
關鍵字
Keywords
變負載、行為模型預測、十三個不同負載點X參數模型、九個不同負載點X參數模型、X參數模型
different load, Behavioral model prediction, X-parameter model, 13points, 9points
統計
Statistics
本論文已被瀏覽 5637 次,被下載 1
The thesis/dissertation has been browsed 5637 times, has been downloaded 1 times.
中文摘要
本研究透過量測不同負載阻抗之X參數行為模型[1],進行預測電晶體之等功率圓,藉此獲得最佳功率點(POUT_MAX),以此獲得最佳負載阻抗點(ZOPT)。因X參數行為模型只能敘述在當下待測物量測獲得之特性,故本研究透過在台南CIC使用X參數變負載量測系統量測電晶體測試鍵進行X參數量測,即可獲得不同負載阻抗下之X參數行為模型。利用先進設計系統(Advanced Design System, ADS)模擬軟體,將此量測結果匯入模擬軟體中來預測在不同負載阻抗之輸出功率與散射參數特性。本研究接續原本九個特定負載阻抗之X參數行為模型量測設計,並增加四組特定負載阻抗,且組成十三組特定負載阻抗之X參數行為模型量測設計。若量測負載阻抗遠離特性阻抗(Z0, 50Ω)時[2],X參數行為模型預測開始產生誤差,而越遠離50Ω時會使得誤差會越差越大。故X參數行為模型可允許之預測範圍為Γ(Reflection Coefficient, Gamma)絕對值等於1/3,若以負載阻抗50Ω(Zo)為例,其預測範圍為0.5Zo到2Zo之間[3]。此十三個不同負載點X參數模型量測可補足在原本九個點在各負載阻抗之預測極限交界中,增加預測之準確度,以達到幾乎全史密斯圖(Smith Chart)之輸出功率特性,藉此獲得待測物之等功率圓和獲得在最大功率點當下之負載阻抗點。此方法與傳統負載拉移(Load-pull)方式更為快速且便利,可同時獲得不同功率時之X參數特性。此預測方式獲得之最佳輸出功率特性與實際負載拉移之量測功率結果一致,故藉由此方法更加有效應用於設計功率放大器(Power Amplifier, PA)。
Abstract
The research predicts the power contours of the transistors and obtains the maximum output power and optimization load impedance by measuring the X-parameter behavior model with different load impedance. This research measures X-parameter of the different transistor testkey by using the X-parameter load-changed measurement system at Chip Implementation Center (CIC) in Tainan, it can obtain the X-parameter behavior model with different load impedance. The measurement data will be imported the RF simulation software which calls Advanced Design System (ADS) to predict the characteristic of the output power and scattering parameter at the different load impedance. The research is continued not only the previous the nine specific load impedance X-parameter behavior model design, but set more four specific load impedance to consist of the thirteen specific load impedance X-parameter behavior model design. If measurement condition of load impedance is far away from Z0(50Ω), the error prediction of X-parameter model will be more apparent. Therefore, the accepted prediction range of the X-parameter behavior model is equal to one-third of absolute value of gamma. This method can predict almost the whole Smith Chart range with output power, and it is more convenient than the conventional load-pull system. It can obtain different input power X-parameter characteristic at same time. It will apply for designing the power amplifier more efficiently.
目次 Table of Contents
論文審定書 i
致謝 ii
中文摘要 iii
Abstract iv
目錄 v
圖目錄 vii
表目錄 x
第一章 緒論 1
1.1 簡介 1
1.2 章節規劃 2
第二章 雙埠網路 4
2.1 傳輸線理論 4
2.2 網路模型 6
2.3 散射參數矩陣(Scattering Matrix) 7
2.4 廣義散射參數 9
2.5 大訊號散射參數(X Parameter)基本原理 10
第三章 行為模型量測系統、九個點基礎介紹與驗證方式 13
3.1 簡介 13
3.2 電晶體電流電壓特性量測 13
3.3 高頻功率量測 15
3.4 大訊號散射參數量測與驗證 17
3.5 九個不同負載點X參數模型動作原理及介紹 20
3.6 十三個不同負載點X參數模型介紹 26
3.7 參考文獻[5]之方法介紹 28
第四章 X參數預測之量測與結果和比較 33
4.1 簡介 33
4.2 各預測方法實際量測 34
4.3 預測方法之驗證及等功率圓之比較 41
4.4 One-tone量測與Two-tone量測 48
第五章 結論 56
5.1 結論與比較 56
參考文獻 58
參考文獻 References
[1] C. Baylis, R. J. Marks, J. Martin, H. Miller, and M. Moldovan, "Going Nonlinear," IEEE Microwave Magazine, vol. 12, no. 2, pp. 55-64, 2011.
[2] H. G. Joujili, M. Mivehchy, and M. Habibi, "A Novel Analytical Design Approach for Determining the Optimum Load to Minimize Harmonic Output Power Based on X-Parameters," IEEE Transactions on Microwave Theory and Techniques, vol. 64, no. 11, pp. 3492-3500, 2016.
[3] J. Verspecht and P. V. Esch, "Accurately Characterizing Hard Nonlinear Behavior of Microwave Components with the Nonlinear Network Measurement System: Introducing " Nonlinear Scattering Functions"," Proc. 5th International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits (INMMC), pp. 17-26, Oct. 1998.
[4] D.M.Pozar, Microwave Engineering, 4th ed. John Wiley, 2011.
[5] A. M. Pelaez-Perez, S. Woodington, M. Fernandez-Barciela, P. J. Tasker, and J. I. Alonso, "Application of an NVNA-Based System and Load-Independent X-Parameters in Analytical Circuit Design Assisted by an Experimental Search Algorithm," IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 1, pp. 581-586, 2013.
[6] Verspecht and D. E. Root, "Polyharmonic distortion modeling," IEEE Microwave Magazine, vol. 7, no. 3, pp. 44-57, 2006.
[7] G. Simpson, "High power load pull with X-parameters - a new paradigm for modeling and design," in 2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON), 2010, pp. 1-4.
[8] R. Ludwig and P. Bretchko, RF_Circuits_Design-Theory_and_Applications 2nd. 2008.
[9] A. M. Pelaez-Perez, J. I. Alonso, M. Fernandez-Barciela, and P. J. Tasker, "Validation of load-independent X-parameters formulation for use in analytical circuit design," in Active RF Devices, Circuits and Systems Seminar, 2011, pp. 47-50.
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