PZT壓電材料現今已經廣泛應用在各領域之中，諸如像微機電元件（致動器、感測器、換能器以及SAW元件）和記憶體元件（DRAM, NVFRAM）等等。而在本論文中，我們嘗試以濺鍍沉積方式來製備PZT薄膜，並利用Si/SiO2/Ti/Pt作為PZT濺鍍的基板，SiO2、 Ti 和 Pt 各層的厚度則分別為250、50 以及150nm。為了改善PZT薄膜的電性和壓電特性，在Pt電極上採用幾奈米的Ti來作為種晶層，以期能製備出具有特定優選方向的PZT薄膜，之後並需要以熱處理來使得PZT薄膜結晶化成鈣鈦礦的結構，在此退火熱處理中採用RTA以及FA兩種退火方式來作為比較。最後，我們再利用XRD和光學顯微鏡來決定所濺鍍PZT薄膜的結晶特性以及表面性質。結果發現兩種沉積方式皆能經由退火熱處理將原本具非晶態（amorphous）的PZT薄膜轉變形成鈣鈦礦結構的PZT薄膜，而另一方面添加Ti作為種晶層確實能幫助（111）優選方向的PZT薄膜形成，但是相對的此種方式對於退火熱處理的容忍溫度較差，表面會出現裂痕，所以整體看來以正常Si/SiO2/Ti/Pt/PZT的沉積方式較能沉積出表面品質佳的PZT壓電薄膜，其優選方向分別在（100）、（110）、（200）的結晶方向上。

Lead zirconate titanate (PZT) thin films have been extensively investigated for many applications, such as MEMS devices (actuators, sensors, transducers, SAW devices) and memory devices (DRAM, NVFRAM). In this study, the sputtering deposition methods were used to fabricate the PZT thin films. Multilayer Si/SiO2/Ti/Pt was used as substrate, in which the thickness of SiO2, Ti and Pt layer was 250, 50 and 150nm. In order to improve the electric and piezoelectric properties of PZT thin films, the few nanometer thick layer of Ti on the platinum have been used for fabricating oriented PZT thin films. Then, the PZT thin films required the heat treatment for crystallization of perovskite structures. RTA and FA were taken for the heat treatment. The crystallographic and surface characteristics of PZT thin films were determined by XRD and Optical Microscope. Finally, PZT thin films deposited on two kinds of substrates were successfully transformed from amorphous phase to perovskite phase by two kinds of the annealing processes. The Ti seed layer yielded (111)-textured PZT even for thin seed layer. But, it also had less tolerances to anneal. Si/SiO2/Ti/Pt/PZT structures were the better way to fabricate the PZT thin films, which had the preferred orientations of (100）,(110）,and (200).

目錄

目錄.....................................................Ⅰ
表目錄...................................................Ⅳ
圖目錄...................................................Ⅴ
中文摘要.................................................Ⅷ
英文摘要................................................ Ⅸ

第一章 緒論

1-1 研究動機........................................1
1-2 文獻回顧........................................5
1-3 本文架構.......................................10

第二章 理論基礎

2-1 壓電性.........................................12
2-2 鐵電性.........................................16
2-3 PZT壓電陶瓷 ...................................19
第三章 PZT薄膜的製備

3-1 PZT薄膜的製程技術..............................29
3-1-1 雷射剝鍍法.....................................29
3-1-2 溶凝膠法.......................................31
3-1-3 有機金屬堆積鍍著法.............................32
3-1-4 化學氣相沉積法.................................33
3-1-5 物理氣相沉積法.................................34
3-2 濺鍍沉積.......................................36
3-2-1 直流濺鍍.......................................38
3-2-2 射頻濺鍍.......................................38
3-2-3 磁控濺鍍.......................................39
3-3 濺鍍PZT薄膜之底材準備..........................40
3-3-1 電極之選擇.....................................40
3-3-2 基材之準備.....................................41
3-4 製作PZT薄膜之實驗流程..........................43
3-4-1 sample清洗步驟.................................44
3-4-2 多層基板和PZT薄膜的濺鍍........................44
3-4-3 sample的退火...................................46
第四章 實驗結果與討論

4-1 實驗結果.......................................48
4-1-1 X光繞射儀晶體結構鑑定..........................48
4-1-2 光學顯微鏡表面型態觀察.........................50
4-2 Si/SiO2/Ti/Pt/PZT薄膜..........................50
4-3 Si/SiO2/Ti/Pt/Ti(seed layer)/PZT薄膜...........55

第五章 結論與未來展望

5-1 結論...........................................62
5-2 未來展望.......................................63

參考文獻................................................64

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