摘要
生物感測晶片具有免螢光標記、高靈敏度、高選擇性、快速且即時檢測之優點。發展生物感測器晶片對於基因檢測、蛋白質檢測、生醫診斷及研發新治療藥物有相當大的助益。本研究將整合生醫、化學、物理等知識，並結合生化科技和半導體技術來製作生物感測晶片。
　　本研究主要分為兩個部分: 第一個部分為利用微電子半導體製程技術成功製作出矽奈米線場效電晶體(SiNW-FET)，由源極-汲極電流對電壓(Isd-Vsd)量測結果可得知矽奈米線與電極金屬形成歐姆接觸。並透過化學表面修飾技術將矽奈米線場效電晶體表面修飾生物素(biotin)受體於晶片上，藉以感測標的分子鏈黴親和素(streptavidin)。
　　另一部分，本研究亦成功以分子束磊晶的方式成長出AlGaN/GaN薄膜，並同樣利用微電子半導體製程技術製作出氮化物高電子遷移率電晶體(HEMT)。本研究中利用HEMT作為生物感測器晶片，並在晶片表面修飾胰臟癌標記物CA19-9抗體，偵測胰臟癌標記物CA19-9抗原分子。
　　大部分生物分子本身會帶有微量電荷，透過化學閘極效應可使p-type矽奈米線之電導率產生變化。由實驗結果得知本實驗所製作之矽奈米線生物感測晶片偵測鏈黴親和素之極限為10-9 M。而HEMT生物感測器晶片偵測胰臟癌標記物CA19-9抗原分子之極限為150 U/mL。

Abstract
　　Biosensor chip has a lot of advantages, such as label-free, ultra-sensitive, highly selective, fast and real-time detection. Fabricating biosensor chip has great benefits for gene-detection, protein-detection, medical diagnosis and development of new medicine. This research will integrate the biomedical, chemistry, and physics, and also combined with biochemical technology and semiconductor technology to produce biosensor chip.
　　We use microelectronic semiconductor process technology to fabricate silicon nanowire field effect transistors (SiNW-FET). The source-drain current versus the voltage curve (Isd-Vsd) shows that the contact pad and the silicon nanowire form ohmic contact. And then we use chemical surface modification technologies to modified biotin on SiNW-FET to detect streptavidin.
　　In addition, we also grow AlGaN/GaN film by MBE, and fabricate nitride–based high electron mobility transistor (HEMT) by microelectronic semiconductor process technology. In this study, we apply HEMT in biosensor for pancreatic cancer marker CA19-9 antigen. And we modify pancreatic cancer marker CA19-9 antibody on the biosensor chip surface to detect pancreatic cancer marker CA19-9 antigen molecule.
　　Most of biomolecules are with weak charges, which can form chemical gating effect and change the conductance of p-type SiNW. And according to the streptavidin microfluidic measurement of biotin-modified SiNW-FET, the detection limit of streptavidin was 10-9 M. And the detection limit of pancreatic cancer marker CA19-9 antigen for N-HEMT biosensor was 150 U/mL.

論文審定書 ........................................................................................................................i
Acknowledge ................................................................................................................... ii
摘要 ................................................................................................................................ iii
Abstract ...........................................................................................................................iv
Contents ...........................................................................................................................vi
Figure list .........................................................................................................................ix
Table list ........................................................................................................................ xii
Chapter 1 Introduction ................................................................................................... 1
1-1 Background and motivation ............................................................................... 1
1-2 Introduction of silicon nanorod field effect transistor (SiNR-FET) .................. 4
1-3 Introduction of nitride-based high electron mobility transistor (HEMT) .......... 7
1-4 Introduction of biosensor chip development ................................................... 10
1-5 Introduction of surface modification technique ............................................... 15
Chapter 2 Equipment setup and biosensor chip process ........................................... 19
2-1 Equipment setup .............................................................................................. 19
2-2 Silicon nanorods (SiNRs) fabrication .............................................................. 29
2-3 Al0.30Ga0.70N/GaN growth conditions .............................................................. 31
vii
2-4 Process flowchart of SiNR-FET fabrication .................................................... 33
2-5 Process flowchart of HEMT fabrication .......................................................... 41
2-6 Fabrication of microfluidic delivery channel................................................... 42
2-7 Introduction of chemicals compounds and configuration................................ 44
Chapter 3 Experimental design .................................................................................... 49
3-1 Introduction of detection principle .................................................................. 49
3-2 Basic electrical measurement ........................................................................... 50
3-3 Surface modification parameter ....................................................................... 51
Chapter 4 Result and discussion of SiNR-FET biosensor chip ................................. 53
4-1 Demonstration of surface modification ........................................................... 53
4-2 SiNR-FET biosensor light sensitivity test ....................................................... 56
4-3 Control experiment result ................................................................................ 60
4-4 Streptavidin microfluidic experiment .............................................................. 62
4-5 Enhance the detection limit of SiNR-FET biosensor....................................... 65
Chapter 5 Result and discussion of HEMT biosensor chip ....................................... 68
5-1 Demonstration of surface modification ........................................................... 68
5-2 Control experiment result ................................................................................ 70
5-3 CA19-9 antigen microfluidic experiment ........................................................ 71
viii
Chapter 6 Conclusion .................................................................................................... 74
Appendix A 金線焊線機操作手冊 ............................................................................... 77
Appendix B 微流體推進器操作手冊 ........................................................................... 87
Appendix C 電性量測設備與軟體介紹 ....................................................................... 94
Appendix D 流體實驗量測設備與軟體介紹 ............................................................. 103
Reference ...................................................................................................................... 109

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