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論文名稱 Title |
碲化銻薄片中由厚度引發的磁傳輸與光學性質增強現象 The thickness-induced magneto-transport and optic properties enhancement in Sb2Te3 flakes |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
43 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2018-08-13 |
繳交日期 Date of Submission |
2018-09-03 |
關鍵字 Keywords |
磁傳輸、碲化銻、磁阻效應、載子遷移率、光電流響應度 mobility, photocurrent response, magneto-transport, Sb2Te2, magnetoresistance |
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統計 Statistics |
本論文已被瀏覽 5654 次,被下載 28 次 The thesis/dissertation has been browsed 5654 times, has been downloaded 28 times. |
中文摘要 |
本實驗透過利用物理性質量測系統 (PPMS),針對不同厚度的拓樸絕緣體碲化銻 (Sb2Te3)進行量測。我們藉由改變溫度以及外加磁場的大小,觀察不同厚度碲化銻薄片的磁阻效應 (MR)、載子濃度 (carrier concentration),以及載子遷移率 (carrier mobility)的變化。 實驗結果顯示, 在外加磁場達到9 T以及在2 K到300 K的溫度區間內,磁阻效應變化率皆呈現線性非飽和 (non-satuating)。實驗結果也顯示在同樣溫度,這些薄片有著相同的電阻率,其線性磁阻卻隨著厚度的增加而變大。此外,實驗結果也顯示其載子遷移率隨著厚度增加並且與磁阻的變化有著線性相關。 從其他實驗結果也觀察到,拓樸材料薄片在照光下觀察到的光電流響應度,隨著厚度增加而變大。這個結果支持了當厚度增加,有效的載子遷移率增加使得其磁傳輸能力以及光學性質增強。 |
Abstract |
The electric and optic properties were studied in the Sb2Te3 with different thicknesses. It reveals the same resistivity at measured temperatures, but shows a larger magneto-resistance (MR) ratio at thicker flakes. All measured data conformed to a linear correlation between magnetoresistance ratio and mobility over a wide mobility range. The magnetoresistance ratio is one-order enhanced. A higher photocurrent response is observed in thicker flakes. These results support the thickness enhances the effective carrier mobility which leads to magneto-transport and optic properties enhancement. |
目次 Table of Contents |
論文審定書 i 摘要 ii Abstract iii 目錄 iv 圖次 vi 第一章 簡介 1 1-1 前言 1 1-2 動機 2 第二章 基本理論 3 2-1 霍爾效應 (Hall effect) 3 2-2 量子霍爾效應 (Quantum Hall effect) 4 2-3 量子自旋霍爾效應 (Quantum spin Hall effect) 5 2-4 拓樸絕緣體 (Topological insulator) 6 2-5 磁阻效應 (Megneto-resistance) 8 2-5-1 非飽和磁阻效應的非均勻系統模型 8 2-5-2 在拓樸表面的線性磁阻效應模型 10 2-5-3 量子磁阻效應模型 10 2-6 光電流響應度 (Responsivity) 12 第三章 實驗流程與儀器介紹 13 3-1 樣品製備與量測方法 13 3-2 量測系統 17 3-2-1 物理性質量測系統 (PPMS) 17 3-2-2 三維輪廓儀 (3D Alpha-Step Profilometer) 19 第四章 實驗結果與討論 20 4-1 實驗架構 20 4-2 結果與討論 21 4-2-1 電阻隨溫度的變化 21 4-2-2 電阻隨外加磁場的變化 23 4-2-3 霍爾效應的分析 26 4-2-4 厚度對載子傳輸影響的分析 29 第五章 結論 32 參考文獻 33 |
參考文獻 References |
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