近幾年來多鐵性材料在FeRAM( ferroelectric random access memory)上的應用潛能以及新興自旋電子學的發展等，掀起多鐵材料研究的熱潮。以往認為鐵電性和鐵磁性不共存於相同的溫區，或是磁電交互作用力極弱，不易引發多鐵性；但是近幾年來，多種多鐵性材料陸續為科學家所發現，甚至可以藉由異質薄膜磊晶技術，在層與層之間借由接面效應而引發強烈之磁電耦合。[1][2]
其中BiFeO3 (鐵酸鉍) 存在著反鐵磁性和鐵電性共存現象，並且共存於室溫以上。尤其特別是，在薄膜形態時有遠大於塊材的電極化量，故工業應用價值大幅提升，因此我們企圖成長不同厚度鐵酸鉍摻鉛(BPFO)薄膜，研究基板與導電薄膜SrRuO3 (SRO)薄膜與BPFO薄膜在晶格變化及物性上之關係。研究發現，底層SRO薄膜並未出現如其他團隊皆發現之強應變現象，反而呈現完全不同於基板之晶格常數，表示SRO薄膜幾乎不受基板之影響而受巨大應變而變化。最上層的BPFO薄膜則發生側傾現象，故也出現應變鬆弛的現象。

In recent years multiferroic materials have great application potential in the ferroelectric random access memory and emerging spintronics development setting off the boom of the multiferroic materials research. It was assume that the ferroelectric and magnetic properties cannot coexist at the same temperature range or their coupling is weak making the searching for multiferroics in dream. Multiferroic materials have been discovered in recent years. Multiferroics may even be induced due to the strong coupling between artificial layers by growing multilayer technique. [1] [2]
Among of which the BiFeO3 compound contains of antiferromagnetic and ferroelectric properties at room temperature. The BiFeO3 thin films manifests a larger spontaneous porlarization than that of the bulk and is highly capable of industrial application. In this study, Pb doped BFO (BPFO) this films were grown on top the conductive SrRuO3 layers. By varying BPFO’s thickness, the strain effect the relative physical properties were studied. It is found that the lattice constants of SRO is totally different to that of STO substrate indicating strain relaxation. Similar phenomena are also discovered for BPFO thin film which is believed due to the tilting effect on the SRO/STO interface.

論文定稿 ii
摘要 iii
Abstract iv
目錄 v
圖目錄 vii
表目錄 x
第一章 緒論 1
1-1 簡介 1
1-2 鐵電材料 2
1-3 磁性種類 3
1-3-1 順磁性 3
1-3-2鐵磁性 4
1-3-3反鐵磁性 5
2-1 鈦酸鍶(SrTiO 3) 性質 6
2-2 銣酸鍶(SrRuO3) 7
2-3 鐵酸鉍BiFeO3 (BFO)物理性質 8
2-3-1 BiFeO3 (BFO)晶格簡介 8
2-3-2 鐵酸鉍電特性 9
2-3-3 鐵酸鉍磁性質 10
第三章 量測儀器簡介 11
3-1 原子力顯微鏡(Atomic Force Microscopy，AFM) 11
3-2 X-光 繞射系統 (X-Ray diffraction system) 14
3-2-1 倒晶格空間 16
3-3-2 ω-2θ 量測方式 19
3-3-3 X-光Rocking curve量測 19
3-3-4 非對稱掃描(Asymmetric scan) 20
3-4 Reciprocal space mapping (RSM) 倒晶格空間圖 21
第四章 實驗儀器和方法 22
4-1 SrTiO3 基板表面處理 22
4-2 基板酸蝕 24
4-3 酸蝕步驟 25
4-4 退火(Annealing) 25
4-5 薄膜成長儀器 26
4-6 薄膜成長實驗步驟 28
第五章 數據分析與討論 30
5-1 X光繞射基板量測 30
5-2 原子力顯微鏡量測鈦酸鍶(SrTiO3)基板原子層 34
5-3 成長薄膜銣酸鍶(SrRuO3) 36
5-3-1 SRO成長參數測試:-例1 36
5-3-2 SRO成長參數測試-例2 38
5-3-3 SRO成長參數測試-例3 40
5-3-4 SRO成長參數測試-例4 43
5-4 成長鐵酸鉍摻雜鉛Bi0.9Pb0.1FeO3(BPFO)薄膜 49
5-4-1 成長BPFO之10分鐘 49
5-4-2 成長BPFO之30分鐘 55
5-4-3 成長BPFO之60分鐘 62
第五章 結論 68
文獻參考 70
附錄 73

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