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論文名稱 Title |
半導體薄膜剝離之研製 Lift-off of Semiconductor Films |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
58 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2014-07-25 |
繳交日期 Date of Submission |
2014-09-03 |
關鍵字 Keywords |
矽薄膜、矽晶圓、熱應力、平坦度、多重撕取薄膜 thermal stress, silicon foil, flatness, silicon wafer, multiple tearing-off film |
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統計 Statistics |
本論文已被瀏覽 5711 次,被下載 0 次 The thesis/dissertation has been browsed 5711 times, has been downloaded 0 times. |
中文摘要 |
利用結晶矽薄膜於玻璃基板上製作矽太陽電池可以大幅降低光發電產業之成本。由於這個原因,近十年有許多可行性的方法被提出來製造矽晶薄膜以用來取代傳統的線切割技術。其中一個方法為"SLiM-Cut", 是利用沉積於矽基板上方的薄膜之熱應力使其從矽基板剝起薄層。到現在為止,有三種材料被用於當作沉積於矽基板上方的沉積層已經實驗成功。鎳,鎳/鉻,銀/鋁結構。在此研究中,我們探討如何控制薄膜的平坦度和厚度以製做多重撕取薄膜於同一基板上的技術。 |
Abstract |
Silicon solar cell made from thin-film crystalline-silicon layers on glass substrates could lower the price of photovoltaic electricity substantially. For this reason, a considerable number of methods have been proposed in the last decade to manufacture thin silicon foils which aim to replace the commonly used sawing technique. One of these methods ”SLiM-Cut” is based on peeling off a thin layer from a silicon substrate by means of the thermal stress induced by layers deposited on the silicon. Up to now, three different materials which are used to be deposited layers have been successfully employed in this technique: Nickel, Nickel/Chromium alloy and a Silver/Aluminium system. In this work we discuss the technology how to control the thickness of tearing-off films and the flatness of tearing-off films to make multiple tearing-off films from the same substrate. |
目次 Table of Contents |
論文審定書 i ACKNOWLEDGEMENT ii 中文摘要 iii ABSTRACT iv CONTENTS v LIST OF FIGURES vii Chapter 1 Introduction 1 1-1 Background of semiconductor materials 1 1-2 Application of Semiconductor materials 2 1-3 Background of making thin silicon film 3 1-4 Film stress on substrate 5 1-5 Selection of deposited layers 5 1-6 Motivation of tearing semiconductor method 6 Chapter 2 Experiments 11 2-1 Type of Film stress 11 2-1-1 Epitaxial stresses 11 2-1-2 Thermal stress 11 2-1-3 Intrinsic or growth stresses 11 2-2 Tearing mechanism 12 2-2-1 SiO2 bonding 12 2-2-2 Cracking patterns 12 2-3 Sputtering system 13 2-4 Physical vapor deposition system 13 2-5 Tearing Procedures 13 2-5-1 SiO2 layer deposited 13 2-5-2 Smearing Ag paste procedures (1) 13 2-5-3 Smearing Ag paste procedures (2) 14 2-5-4 Smearing Ag paste procedures (3) 14 2-5-5 Direct Bonding on glass procedure 14 Chapter 3 Results and Discussion 18 3-1 Dependence of characterization of tearing film on experiment parameters 18 3-1-1 Heating temperature 18 3-1-2 Thickness of Ag paste 18 3-1-3 Crystal orientation 18 3-1-4 Materials wafer of tearing off 19 3-2 Characterization of tearing-off films 19 3-2-1 Three parameters to control the thickness of tearing-off film 19 3-2-2 Crack direction of tearing-off film 21 3-2-3 Flatness of tearing-off film 21 3-2-4 Fracture of the substrate 22 3-2-5 Multiple tearing-off films 22 3-2-6 Photoluminescence of tearing-off films 23 Chapter 4 Conclusions 46 References 47 |
參考文獻 References |
[1] F. Dross, A. Milhe, J. Robbelein, I. Gordon, P. Bouchard, G. Beaucarne, J. Poortmans. “STRESS-INDUCED LIFT-OFF METHOD FOR KERF-LOSS-FREE WAFERING OF ULTRA-THIN (-50 101m) CRYSTALLINE SI WAFERS” IMEC, V.Z.w- Belgium, 2 Ecole des Mines de Paris (CEMEF) –France. [2] I. Gordon n, F. Dross, V. Depauw, A. Masolin, Y. Qiu, J. Vaes, D. VanGestel, J. Poortmansimec, Kapeldreef75,B-3001Leuven,Belgium “Three novel ways of making thin-film crystalline-silicon layers on glass for solar cell applications“ [3] I. Mizushima, T. Sato, S. Taniguchi, Y.Tsunashima, Empty-space-in-silicon technique for fabricating silicon-on-nothing structure, Applied Physics, Letters 77(2000)3290. [4] Silicon PV: April 03-05, 2012, Leuven, Belgium “Epoxy-induced spalling of Silicon” [5] A. Masolin, J. Vaes, F. Dross, R. Martini, A. P. Rodriguez, J. Poortmans and R. Mertens, Evidence and Characterization of Crystallographic Defect and Material Quality after SLIM-Cut Process, Proceedings of the Material Research Society, San Francisco, California, USA, 2011. [6] Mechanical and Enuironmental Engineering Department, University of California. “Cracking and Debonding of microlaminates” [7] R. Behrisch (ed.) (1981). Sputtering by Particle bombardment. Springer, Berlin. ISBN 978-3-540-10521-3. [8] Materials Science and Engineering, R25 (1999) 1-88. “Wafer direct bonding: tailoring adhesion between brittle materials” [9] J. Appl. Phys. 49, 2423 (1978) “Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substrates” A. K. Sinha, H. J. Levinstein, and T. E. Smith. [10] Kenneth E. Bean and Paul S. Gleim, PROCEEDINGS OF THE IEEE, VOL. 57, NO. 9, pp1469-1476, SEPTEMBER 1969 [11] S. H. Xie, “Tearing off and bonding semiconductor”, 2013 |
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