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博碩士論文 etd-0801114-142804 詳細資訊
Title page for etd-0801114-142804
論文名稱
Title
熱退火效應對電子傳輸性質的影響
The effect of thermal annealing on the electrical transport properties
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
65
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2014-07-24
繳交日期
Date of Submission
2014-09-01
關鍵字
Keywords
電阻率、鎳、Mayadas-Shatzkes晶粒邊界散射、退火、顆粒尺寸、掃描式電子顯微鏡、薄膜厚度、Fuchs-Sondheimer表面散射
nickel, electrical resistivity, Mayadas-Shatzkes grain boundary scattering, film thickness, electron microscopy (SEM), Fuchs-Sondheimer surface scattering, grain size, annealing
統計
Statistics
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中文摘要
將鎳沉積到玻璃基板後,透過電阻率的量測,可以發現隨著薄膜厚度的增加,電阻率會隨之降低。而由於Fuchs-Sondheimer表面散射使得電阻率的變化會有如此的表現。
當薄膜厚度足夠的情況下,薄膜經過退火之後,因為顆粒尺寸變大,導致電阻率會隨之降低,而這是由於Mayadas-Shatzkes晶粒邊界散射所導致。然而在薄膜厚度非常薄的情況下,電阻率反而會因為退火溫度的上升而增加,本實驗將利用掃描式電子顯微鏡(SEM)觀察薄膜表面,並對其結果進行分析。
Abstract
The thin nickel films have been deposited on glass substrates. The electrical resistivity of films increases with decreasing film thickness. The electrical resistivity of films increases because of Fuchs-Sondheimer surface scattering.
Under the condition that the films are thick enough, it reduces the electrical resistivity of films to anneal the films because the grain size increases with annealing temperature increasing. According to Mayadas-Shatzkes grain boundary scattering, the electrical resistivity decreases owing to the increasing grain size. However, under the condition that the films are very thin, the electrical resistivity of films increases with annealing temperature increasing. In this research, we would use scanning electron microscopy (SEM) to observe the surface of films. Subsequently, we would analyze the data from the experiment.
目次 Table of Contents
口試委員會審定書 i
摘要 ii
Abstract iii
目錄 iv
圖次 vi
第一章 簡介 1
1-1 前言 1
1-2 動機 2
第二章 基本理論 3
2-1 連續薄膜結構的形成 3
2-1-1 薄膜沉積方式 3
2-1-2 成核現象. 4
2-1-3 Ostwald併吞過程. 5
2-1-4 熔結過程. 6
2-1-5 原子團的遷移. 7
2-2 滲透理論 8
2-3 薄膜的電阻率 14
2-3-1 Fuchs-Sondheimer model 15
2-3-2 Mayadas-Shatzkes model. 17
2-3-3 兩種機制隨溫度的變化. 20
第三章 儀器介紹 22
3-1 電子束蒸鍍機 22
3-2 封閉循環式冷卻機(Close-Cycle Refrigerator) 24
3-2-1 氦-4冷卻機(Helium-4 Cryostat) 25
3-2-2 氦-3冷卻系統(Helium-3 Refrigerator System) 30
第四章 實驗結果與討論 37
4-1 實驗架構 37
4-2 改變薄膜厚度後電阻率的影響 38
4-2-1 室溫下電阻率與薄膜厚度的關係 38
4-2-2 改變薄膜厚度與不同溫度下電阻率變化的關係 40
4-3 薄膜進行退火前後電阻率的變化關係 41
4-3-1 厚度100nm的Ni薄膜進行退火前後電阻率的變化 41
4-3-2 厚度10nm的Ni薄膜經退火後對電阻率的影響 42
4-4 掃描式電子顯微鏡(SEM)下Ni薄膜的變化 43
4-4-1 SEM圖下厚度100nm的Ni薄膜進行退火前後的變化 43
4-4-2 SEM圖下厚度10nm的Ni薄膜進行退火前後的變化 48
第五章 結論 53
參考文獻 55
參考文獻 References
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