本實驗結構主要以摻鈦藍寶石雷射(Ti：sapphire)與單光子計數系統(TCSPC)對生長在藍寶石基板的m-plane ZnO進行光激發螢光光譜(PL)與時間解析螢光光譜(TRPL)的量測，實驗的主要探討方向為經由原子沉積法的ZnO，對退火前後的樣品做光致螢光的分析。藉由樣品與激發光的夾角(0度和90度)測得的變溫光致螢光光譜和變溫時間解析螢光光譜，在退火過的m-plane ZnO上可以明顯看到特徵訊號，而未退火的m-plane ZnO較不明顯。退火m-plane ZnO變溫光激發螢光光譜中發現，近帶隙發光(約3.37 eV)隨著溫度上升會具有紅移現象，而主要發光峰值在3.32 eV有先藍移(100 K以下)而後紅移的現象。由螢光偏振方向與樣品的C軸夾角去量測，光譜強度螢光偏振方向垂直於樣品C軸相較平行於樣品C軸強。而在時間解析螢光光譜(TRPL)的部分，我們從3.14 eV到3.4 eV之間取七個能量點(分別為3.14 eV、3.18 eV、3.22 eV、3.27 eV、3.31 eV、3.4 eV)從兩樣品中發現載子結合放光的生命週期在經過退火之後變小，退火前樣品於3.31 eV和3.4 eV幾乎不發光，所以在3.31 eV和3.4 eV於退火前TRPL的訊號接近雷射訊號，而退火後近能帶發光訊號會出現，所以在近能帶區(3.31 eV、3.4 eV)可以量測到TRPL的訊號。

We use a Ti:sapphire femtosecond laser and a Time Correlated Single Photon Counting (TCSPC) system to study optical properties and time-resolved PL (TRPL) of the m-plane ZnO. The sample we studied was made by ALD (Atomic Layer Deposition). One sample was made without annealing and the other one was annealed at 700oc (O2).
We use Tripler system to get the 269 nm laser. It is good for simulating semiconductor. Then we get emission light from Triax 550. From low temperature PL spectral，we saw an big envelope from sample B (unannealed). Sample A (annealed) showed some stacking fault. From TRPL spectral measuring at 14K、50K、100K and 150K，we saw sample A’s life time was less then sample B in the range of 3.14 eV to 3.4 eV. It means that there is a great improvement for light’s emission after annealing.

論文審定書 i
致謝 ii
摘要 iii
Abstract iv
第一章 導論 1
1.1 前言 1
1.2 ZnO結構與基本特性 2
1.3 極性與非極性ZnO差異性比較 3
1.4 ZnO發光機制 4
1.5 相關文獻探討 5
第二章 基本原理介紹 9
2.1 光致螢光光譜(PL)與時間解析螢光光譜(TRPL) 9
2.2 導電帶載子非復合之能量釋放 10
2.3 電子與電洞復合之釋放能量方式 11
第三章 實驗原理與光路架設 14
3.1 Mai Tai Laser 14
3.2 TP-200B Tripler原理 15
3.3 TCSPC系統簡介 18
3.4 實驗光路架設 23
3.5 其他量測儀器原理與光學元件介紹 24
第四章 實驗結果與討論 29
4.1 樣品介紹 29
4.1.1 M-plane ZnO 29
4.1.2 SEM 30
4.1.3 XRD繞射結構分析 31
4.2 光致螢光光譜分析 34
4.2.1 變溫光致螢光光譜 34
4.2.2 同樣品偏振比較 43
4.3 時間解析螢光光譜分析 47
4.3.1 變溫時間解析螢光光譜 48
4.3.2 變溫螢光時間分析與量子效率的分析 59
4.3.3 Sample A與sample B衰減速率討論 65
第五章 結論 67
Reference 68

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