本研究目標為2.5 GHz固態堆疊型體聲波濾波器製作及特性分析，並將濾波元件進行雷射退火處理，藉由網路分析儀探討雷射退火前後S21頻率響應之變化；薄膜特性分析中，本研究藉由調變濺鍍壓力以及雷射退火的方式，探討AlN薄膜具壓電性之(002)晶向強度之變化。
本研究以不同膜厚之氮化鋁薄膜，利用其高波速特性製作出高頻段(2.5～3 GHz)之固態堆疊型濾波器。並利用頂電極之負載效應，可調變出通帶的頻寬(19.69～199.68 MHz)範圍；最後將濾波元件進行退火，探討其通帶之中心頻率、3dB頻寬以及插入損失之變化。

This study is to fabricate and characterize the 2.5GHz solidly mounted film bulk acoustic wave filters with laser annealing processes. The effects of laser annealing processes on the frequency response of S21 are analyzed using the network analyzer. In order to obtain the highly (002) oriented piezoelectric AlN varied thin films, various sputtering parameters and laser annealing are varied to improve the crystalline characteristics.
In order to obtain the SMR filters with high resonant frequencies(2.5～3GHz), varied thickness of AlN thin films as the piezoelectric layers in SMR devices are designed. Besides, top electrodes are adopted as loading effect to modify the 3dB band width (19.69～199.68MHz) of the filters. Finally, the variations of center frequency, 3dB bandwidth and insertion loss for the SMR filters after annealing are investigated.

中文審定書 i
英文審定書 ii
誌謝 iii
摘要 iv
Abstract v
目錄 vi
圖目錄 x
表目錄 xiii
第一章 前言 1
1.1 研究背景 1
1.2 薄膜體聲波諧振器之簡介 2
1.3 研究動機 5
1.3.1 SAW及FBAR之結構分析 5
1.3.2雷射加工 7
1.4 研究內容 8
第二章 理論分析 9
2.1 鉬(Molybdenum, Mo)結構與特性 9
2.2 二氧化矽(Silicon Dioxide, SiO2)結構與特性 9
2.3 鉑(Platinum, Pt)結構與特性 10
2-4 氮化鋁(Aluminium Nitride, AlN)的結構與特性 10
2.5 薄膜沉積原理 13
2.5.1 沉積現象 13
2.5.2 薄膜表面及剖面結構 15
2.6 濺鍍原理 16
2.6.1 輝光放電 17
2.6.2 磁控濺射 18
2.6.3 射頻濺射 20
2.6.4 反應性濺射 20
2.7 布拉格反射器的原理 22
2.8 壓電轉換之現象 23
2.9 SMR的基本設計 25
2.10 濾波器 28
2.11 雷射 29
2.11.1 雷射退火 30
2.11.2 雷射削薄 30
第三章 實驗方法與步驟 32
3.1 實驗流程 32
3.2 基板之清洗 33
3.3 布拉格反射器之製作 33
3.4 壓電薄膜之製作 38
3.5 黃光微影製程 39
3.6 掃描式電子顯微鏡 42
3.7 X光繞射分析 43
3.8 網路分析儀 44
3.9 反射層及壓電層膜厚計算公式 44
3.10 SMR及T型濾波器的製作 46
3.10.1 SMR之製作流程 46
3.10.2 T型濾波器之製作流程 46
3.11 共振器之圖型 48
第四章 結果與討論 49
4-1 反射層的探討 49
4-2 壓電層的探討 50
4-2-1 濺鍍壓力對AlN薄膜特性之影響 50
4-2-2 雷射退火對AlN薄膜特性之影響 54
4-3 SMR元件之量測結果 61
4-3-1 SMR元件之AlN膜厚調整 61
4-3-2 以白金為SMR元件之負載 63
4-4 T型濾波器之量測結果 65
4-5 T型濾波器退火之結果 70
4-5-1 T型濾波器退火之表面型態 70
4-5-2 T型濾波器退火之量測結果 72
4-6 雷射削薄之結果 74
4-6-1薄膜Pt 雷射削薄之結果 74
4-6-2 T型濾波器雷射削薄之結果 76
第五章 結論 77
參考文獻 79

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