本論文探討濺鍍時，引起之阻抗值變化；與射頻電源供應器傳輸線之間的傳輸問題，提升濺鍍效能。在使用濺鍍技術進行絕緣材料鍍膜時，當射頻電源加入濺鍍機靶材上後，由於RF 電源、壓力、氣體流率等外來因素之影響，加上濺鍍機內部之濺鍍靶材、基板、腔體內壁結構，造成基板直流偏壓、電漿離子密度、輝光鞘層電容等電壓電流改變，以致引起濺鍍機整體阻抗特性之改變，沈積薄膜效率變差或產生反濺射現象。在比較各類常見之匹配電路後，選擇L型匹配網路做為研究射頻濺鍍系統之實驗電路，進行最佳化電路控制，以研究濺鍍時阻抗匹配的問題。最後，經由本研究之阻抗匹配技術，可得到最大濺鍍功率，增進設備穩定性與製程速率。

In this study, we propose to investigate the variation of impedance,energy transfer from the RF generator to the discharge is not perfect, and then to improve the sputtering efficiency. For the deposition of insulating film by sputtering technique, the external factors such as input RF power,gar pressure and gas flow rate, and the internal parts of sputtering system such as sputtering target, substrate, and the structure of internal wells of chamber, lead to deviate sputtering parameters such as the DC bias on substrate, ion density in the plasma, and the capacitance of the sheath of glow discharge. All of the factors introduce larger deviations of impedance matching into the sputtering system, that results in decrease the efficiency of film deposition and/or induce re-sputtering phenomena.Comparisons are made with various matching networks applied in real RF sputtering systems. The networks, L-type is choose as the impedance matching network of the RF sputtering system for investigation, is analytically studied in their interaction with the experimental device.From the characteristics of L-type studied, in case of numerical values are deduced and used for the optimizing control the impedance matching network. Finally, by using this technology of impedance matching network, the optimizing sputtering efficiency is achieved and that can enhance the stability of equipment and increase the sputtering rate.

第一章 緒論………………………………………… 1
1-1 研究動機與目的………………………… 1
1-2 傳輸線原理……………………………… 2
1-3 史密斯圖分析應用……………………… 5
1-4 常見匹配網路簡介……………………… 6
1-4-1 T 型匹配網路……………………… 6
1-4-2 Π（PI）型匹配網路………………… 7
1-4-3 L 型匹配網路………………………… 8
1-5 濺鍍理論…………………………………… 8
1-6 磁控濺鍍…………………………………… 10
第二章 電源至反應器之阻抗匹配………………… 12
2-1 裝置阻抗的模型…………………………… 12
2-1-1 電漿阻抗……………………………… 13
2-1-2 匹配網路之組成……………………… 15
2-2 匹配網路參數的計算……………………… 15
2-2-1 Π型網路之計算……………………… 16
2-2-2 L型網路之計算……………………… 17
2-3 匹配的結果………………………………… 18
2-3-1 依賴電壓和電源量測………………… 18
2-3-2 匹配網路的比較……………………… 19
第三章 RF 濺鍍系統之電子特性………………… 21
3-1 反濺射理論………………………………… 22
3-2 RF 濺鍍系統的等效電路理論…………… 23
3-2-1 經過鞘層的RF和DC電位…………… 24
3-2-2 RF 濺鍍系統DC 電位………………… 26
3-2-3 鞘層之阻抗…………………………… 27
3-2-4 離子電流密度在鞘層和電漿之阻抗… 29
3-3 網路分析…………………………………… 35
3-4 利用數值技術計算系統電壓……………… 36
第四章 實驗與分析………………………………… 38
4-1 實驗方法…………………………………… 38
4-1-1 檢測器補償…………………………… 39
4-1-2 程序控制……………………………… 41
4-2 實驗設備…………………………………… 42
4-3 實驗結果…………………………………… 43
4-3-1 穩定匹配分析………………………… 43
4-3-1-1 位置與來源電源……………… 44
4-3-1-2 位置與壓力…………………… 44
4-3-1-3 位置與氣體…………………… 45
4-3-2 瞬間匹配分析………………………… 45
4-3-3 匹配結論判斷………………………… 46
第五章 結論………………………………………… 48

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微波工程/David M. Pozar 著/郭仁財 譯/民國九十年
高立出版
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