纖鋅結構的氧化鋅沿c-軸有自發性極化，造成了量子侷限史塔克效應，降低
發光效率，改用非極化面取向之纖鋅結構氧化鋅可避免此問題，故了解非極化面取向氧化鋅的性質有其研究價值。本實驗以研究退火後m-面氧化鋅其結構、光性和電性為主，探討m-面氧化鋅薄膜的物理性質，磊晶薄膜是由原子層沉積系統(ALD)在m-面氧化鋁基板上長成。從霍爾量測中顯示為P-型半導體，薄膜經過退火後會使其載子濃度下降。薄膜的電阻率隨溫度的下降而升高為典型半導體特徵。電阻率對溫度關係曲線可利用熱活化能公式擬合出雜質能階，擬合結果分別可在高溫區及低溫區各得到一個雜質能階，顯示在轉折溫度上下有不同的雜質能階主導。低溫磁阻的量測得負磁阻值為弱局域效應。由PL光譜的結果可得到本實驗氧化鋅能隙約為3.27-3.3eV，但退火後PL光譜全貌有些變化，可能因為缺陷所致的能隙中間的雜質態增減重新分佈,而且所發射之螢光強度的偏振度，即電場振盪方向沿c-軸或沿a-軸分量的比例,結果也產生了變化。

Wurtzite ZnO exhibits along its c-axis a spontaneous polarization that leads to Quantum-Confined Stark Effect (QCSE) and reduces its luminous efficiency. Use of ZnO crystals with the c-axis in-plane oriented, such as those of m-cut and a-cut surface, are considered a solution to the QCSE problems. In this thesis work, thin film samples of m-plane oriented ZnO (m-ZnO) are grown on m-plane sapphire by Atomic Layer Deposition (ALD). The post-deposition annealing effects on the crystal structures, optical and electrical transport properties of the m-ZnO thin films were investigated. From Hall measurement results, the samples are p-type semiconductors whose carrier concentrations decrease after post-annealing. The functional dependence of electrical resistivity on temperature delineate classic semiconductor behaviors characteristic of thermally-activated impurities of specific energy levels. Analysis indicates the existence of a transition temperature at which the overall properties show a transition temperature between two electronic phases, each having a distinctive set of active impurity energy levels. Weak localization effect leads to negative MR, which is particularly prominent at low temperatures. Multi-peak analysis give the band gap Eg ~ 3.27-3.3(eV), with some small differences along c-axis and a-axis after annealing. The band gap states variations are more complex, possibly due to the intricate emergence of defects or imperfection of various kinds.

致謝............................................................... i
摘要 ii
Abstract........................................................................... iii
目錄..................................................................................iv
圖目錄...............................................................................v
表目錄...............................................................................vii
第一章 前言及文獻回顧...................................................... 1
第二章 基本理論及儀器介紹............................................... 5
2-1原子層沉積(atomic layer deposition)................................5
2-2 X光繞射儀(X-ray duffractometer).................................... 7
2-3光致螢光(photoluminescence) ........................................11
2-4 電性量測..................................................................... 12
2-4-1物理性質量測系統(PPMS)簡介.................................12
2-4-2接觸電阻............................................................... 12
2-4-3 霍爾量測.............................................................. 15
第三章 實驗設計............................................................... 19
第四章 實驗結果與分析.................................................... 21
4-1 X光繞射(XRD )結果分析.............................................. 21
4-2光致螢光(photoluminescence，PL )結果分析............... 29
4-3 電性分析................................................................. 34
第五章 結論.................................................................. 47
參考文獻...................................................................... 48

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