本研究以電漿輔助分子磊晶系統（plasma-assisted molecular beam epitaxy, PAMBE）在GaN template上成長Ｍg摻雜的GaN薄膜，所成長的樣品藉由霍爾量測、I-V量測、PL以及Raman scattering分析成長的樣品是否成功將Mg摻雜入GaN薄膜內。另外，使用掃描式電子顯微鏡和原子力顯微鏡觀察其表面形貌。
在電性分析結果方面，霍爾量測結果顯示所有樣品皆為n-type，然而I-V量測結果卻顯示所成長的Mg-doped GaN薄膜與GaN template具有p-n junction的I-V曲線。另外，Raman scattering量測沒有觀察到656 cm-1的Mg摻雜特性峰，而PL光譜量測則偵測到有試片發生約0.03 eV的紅位移。由表面分析的觀察結果顯示，在Ga droplet區域具有較平整的表面，然而在沒有Ga droplet的區域則出現許多微小坑洞，這些坑洞可能是由Mg摻雜所產生的極性反轉或差排所產生的表面缺陷。
綜合以上結果，本研究已成功的將Mg摻雜於GaN薄膜裡，然而電洞濃度不高，造成在霍爾量測和Raman scattering量測上的困難。

We grew Mg-doped of GaN on GaN template by plasma-assisted molecular beam epitaxy (PAMBE) and measured these samples by Hall measurement, I-V curve measurement, PL, Raman scattering, SEM and AFM.
The results of Hall measurement of these samples showed that the conducting type is n-type. However, I-V measurement showed these samples to have a behavior of p-n junction between Mg-doped GaN film and GaN template. For optical properties, Raman scattering spectrum did not detect a peak at 656 cm-1 which indicates Mg-N vibration; PL measurement showed the emission peak of growing samples shifted 0.03eV toward to low photon energy. The results of surface analysis showed a smooth surfaces at Ga droplet area while many pin hole was formed at “dry” area. Those pin hole could be inversion domain. Futher study is going.
Based on electrical, optcial, and surface analysis, the Mg-doped GaN thin film has been successful obtained by MBE. However, the hole concentration of these samples is so low that results in difficulty for Hall and Raman scatting measurement.

中文摘要 4
ABSTRACT 5
1.簡介 8
1-1前言 8
1-2文獻回顧 10
2. 儀器原理 17
2-1原子力顯微鏡 17
2-2霍爾效應 20
3. 儀器操作步驟 23
3-1 原子力顯微鏡 23
3-1-1儀器介紹 23
3-1-2操作步驟 25
3-1-3檔案處理 30
3-2霍爾量測 32
3-2-1儀器介紹 32
3-2-2操作步驟 33
4.樣品分析與量測結果 37
4-1樣品成長參數 37
4-2樣品量測數據與分析 39
4-2-1. HALL量測結果 39
4-2-2. I-V量測結果 42
4-2-3. SEM掃描結果 46
4-2-4. AFM量測結果 50
4-2-5. PL量測結果 58
4-2-6. RAMAN量測結果： 60
5.結論 62
REFERENCE 65

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