在本論文中，我們提出了一個具有源/汲極束縛點且自我對齊的超薄矽本體新穎雙通道金氧半場效電晶體(DC-SDT MOSFET)，製程則是採用磊晶之矽鍺/矽來完成，所以我們並沒有使用昂貴的SOI基板，而是使用Bulk基板，這可以說是大大的降低製作成本，我們也同時研究了元件之直流特性以及在射頻/類比(RF/analog)上元件之基本性能，變化環境溫度對於元件操作性能上的影響也將一一被探討，並且與相似的架構來做比較，例如:本體束縛點(body-tied, DC-BT MOSFET)以及傳統之雙通道電晶體(DC-SOI MOSFET)，根據ISE-TCAD 10.0之二維模擬結果，對於DC-BT MOSFET而言，我們提出之DC_SDT MOSFET改善之元件性能，例如: Ioff降低了47.6%，切換速度(switching speed)增強了18.1%，次臨界斜率(subthreshold swing)改善了13%，電壓增益增強了25%，而對於DC-SOI MOSFET而言，我們提出之DC-SDT MOSFET改善的元件性能包括: Ion增強了11.3%，晶格溫度在上通道與下通道分別降低了35.7%和35.5%，電壓增益增強了15%。而我們並不單單是與上述兩個元件做比較，也和現今之主流元件做了比較，例如: FinFET、Gate-all-around，經由比較後，我們確定我們提出之DC-SDT MOSFET不管是在電流驅動能力或是抑止短通道效應的能力上，都是較好的，所以對於微縮而言，DC-SDT MOSFET的確是個有潛力的元件。

In this thesis, a novel fully self-aligned bulk-Si device named dual-channel source/drain-tied (DC-SDT) MOSFET with extremely thin (ET) body is proposed. The process utilizes the multiple epitaxial growths of SiGe/Si layers, so the starting material is bulk-Si wafer instead of the SOI wafer. We have investigated the RF/analog performance, and the high temperature induced device stability degradation has also been also investigated. Moreover, we have compared this structure with the other similar transistors such as: body-tied MOSFET (DC-BT MOSFET) and conventional dual-channel MOSFET (DC-SOI MOSFET). Based on the simulation results, for the DC-BT MOSFET, our proposed DC-SDT MOSFET has improved the device performances such as: Ioff decreased 47.6%, switching speed increased 18.1%, S.S. improved 13%, and voltage gain increased 25%. Whereas for the DC-SOI MOSFET, our proposed DC-SDT MOSFET has also improved the device performances such as: Ion increased 11.3%, reduction of lattice temperature 35.7% and 35.5 in the top and bottom channels, voltage gain increased 15%. We not only compared with the above two similar transistors, but also compared to the other mainstream devices, such as: FinFET and Gate-all-around. After the comparisons, we confirm that the proposed DC-SDT MOSFET has better ON-state current and short-channel behaviors. For the scaling, DC-SDT MOSFET can truly become one of the strong candidates.

第一章 導論 1
1.1 背景 1
1.2 論文評述 2
1.3 動機 8
第二章 元件設計與模擬 10
2.1 元件的設計 10
2.2 元件模擬所用之物理模型說明 12
第三章 結果與討論 13
3.1 元件之直流特性比較 13
3.2 環境溫度對於元件性能之影響 27
3.3 元件之射頻/類比性能之比較 31
3.4 環境溫度對於射頻/類比性能之影響 37
3.5 DC-SDT MOSFET與參考文獻中元件特性之比較 40
第四章 結論與未來發展 43
4.1 結論 43
4.2 未來發展 44
參考文獻 45
個人著作 51
共同著作 53
個人得獎相關文件 58

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