氮化銦 (InN) 因具有低的有效質量、高電子遷移率及高飽和速度，在高頻高功率的電子元件發展是非常有具有潛力的。本文以光調製光譜 (Photoreflectance) 探討氮化銦在紅外線區段的特性。首先在變溫下，量測光調製光譜 (PR) 訊號，並界定光譜的躍遷類型，並與光致螢光 (PL) 進行比較。接著在溫度10K下，改變激發光光強度 Ppu ，量測 PR 光譜訊號，再次驗證光譜的躍遷類型。因氮化鎵 (GaN)也可觀測到類似的激子躍遷特性，最後再與氮化鎵激子的束縛能進行比較。

The excitonic transitions of a c-oriented wurtzite InN thin film, grown on sapphire substrate by plasma-assisted molecular beam epitaxy, were studied by photoreflectance (PR) measurement from 10 to 120 K. The energies of the observed features have a tendency to decrease with increasing temperature. They are assigned to excitonic transition rather than band-to-band transitions because the features can be observed only below 110 K. The justifications of such assignments are discussed in the context of binding energies of the excitons. The PR spectra of various power of pumping beam (Ppu) were also measured. The energies of the observed features become red-shifted with decreasing Ppu. This is consistent with assignment of the excitonic transition.

第一章 導論及相關理論
1.1 前言...............................................................................1
1.2 直接能隙與間接能隙半導體.......................................2
1.3 激子...............................................................................4
1.4 光致螢光原理及簡介...................................................6

第二章 調制光譜
2.1 調制光譜學簡介...........................................................9
2.2 調制光譜學的機制.....................................................11
2.3 電子躍遷理論.............................................................14
2.4 介電函數和反射率的關係.........................................18
2.4.1 反射率......................................................................18
2.4.2 吸收係數與介電數..................................................21
2.5 低電場調制.................................................................25
2.6 中電場調制( FKOs 效應 ).........................................28
2.7 Franz-Keldysh Oscillations與asymptotic form...31

第三章 實驗設計
3.1 實驗樣品.....................................................................36
3.1.1 InN簡介...................................................................36
3.1.2 實驗樣品.................................................................39
3.2 實驗裝置....................................................................40
3.2.1 光致螢光的裝置.....................................................40
3.2.2 光調制光譜的裝置.................................................42

第四章 實驗結果與分析
4.1 實驗圖形....................................................................44
4.2 實驗結果討論與分析................................................51

第五章 結論.....................................................................53

Reference.......................................................................54

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