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URN	etd-0804109-044040
Author	Bing-Rung Wu
Author's Email Address	No Public.
Statistics	This thesis had been viewed 4747 times. Download 1363 times.
Department	Electrical Engineering
Year	2008
Semester	2
Degree	Master
Type of Document
Language	zh-TW.Big5 Chinese
Title	The fabrication of piezoelectric transducers by depositing ZnO films on PET substrates
Date of Defense	2009-07-15
Page Count	81
Keyword	ZnO piezoelectric transducers
Abstract	In this thesis, piezoelectric transducers were fabricated by depositing ZnO films on PET substrates. The optimal deposition parameters for ZnO films are sputtering pressure of 15 mTorr, RF power of 75 W and oxygen concentration of 60 %, which are determined by scanning electron microscopy and X-ray diffraction analysis. PET substrates of Young’s modulus of 6.62 GPa are obtained by Nano Indenter. To fabricate a transducer with resonance frequency of 100 Hz, the cantilever length of 0.979 cm and vibration area of 1.4835 cm2 are calculated by Cantilever Vibration Theory. Copper layer was attached to ZnO/ITO/PET structure to form piezoelectric transducers. A mass of 0.57 g was attached to the transducer to increase the vibration amplitude. A vibration source of 100 Hz was provided to the piezoelectric transducer and then the experimental results were obtained by oscilloscope. The optimal thickness of ZnO films is 964.65 nm, at which the open circuit voltage is 1.87 V. A bridge rectifier was constructed by Shottky diode with product number 1N5711 along with a capacitor of 37 nF. After rectifying and filtering of device output, the maximum power of 0.0697μW/cm2 was generated with the load resistance of 5 MΩ and the internal resistance of 4.3185 MΩ.
Advisory Committee	Shoou-Jinn Chang - chair Wen-Hsi Lee - co-chair Mau-Phon Houng - co-chair Chien-Jung Huang - co-chair Ying-Chung Chen - advisor
Files	etd-0804109-044040.pdf indicate access worldwide
Date of Submission	2009-08-04

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