Title page for etd-0805109-212244


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URN etd-0805109-212244
Author Ching-Fan Tseng
Author's Email Address No Public.
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Department Electrical Engineering
Year 2008
Semester 2
Degree Master
Type of Document
Language English
Title Characterization of P- and N-type Zinc Oxide Films Prepared by RF Sputtering
Date of Defense 2009-07-21
Page Count 73
Keyword
  • ZnO
  • Sputtering
  • Thin Film
  • Abstract In this study, the reactive rf magnetron sputtering was used to deposit P- and N-type zinc oxide (ZnO) thin films, Zinc oxide (ZnO) has higher exiton bindingenergy (60 meV) and high band gap (~3.4 eV) that can provide efficient ultraviolet (UV) light at room temperature (RT). Intrinsic ZnO is thought to be N-type primarily because of donor defects such as zinc interstitials (Zni) and oxygen vacancies (VO). we want to prepared N-doped ZnO (ZnO:N) films, we used two method : Deposition Zn3N2 films by dc sputtering of Zn target in proportional Ar and N2 mixture. After deposition, it were thermally oxidized at difference temperatures to prepared N-doped ZnO (ZnO:N) films. And to make use of rf sputtering that ZnO target in proportional Ar and N2 mixture, to prepared N-doped ZnO (ZnO:N) films. The physical characteristics of ZnO thin films with different parameter were obtained by the analyses of field emission scanning electron microscopic (FE-SEM) and XRD. The electron spectroscopy for chemical analysis (ESCA) was used to analyze the chemical states of ZnO thin films. In optical properties, the photoluminescence spectrometer was used to measure the photoluminescence characteristics (PL).
    Advisory Committee
  • Kuo-Mei Chen - chair
  • Tsu-Hsin Chang - co-chair
  • Jeng Gong - co-chair
  • Ming-Kwei Lee - advisor
  • Files
  • etd-0805109-212244.pdf
  • indicate in-campus access immediately and off_campus access in a year
    Date of Submission 2009-08-05

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