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論文名稱 Title |
以射頻濺鍍法及液相沉積法成長電致變色氧化鎢薄膜 Electrochromic Properties of Tungsten Oxide Films Prepared by RF Sputtering and Liquid Phase Deposition |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
99 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2009-07-21 |
繳交日期 Date of Submission |
2009-08-05 |
關鍵字 Keywords |
射頻濺鍍法、氧化鎢、液相沉積法、電致變色 RF sputtering, LPD, WO3, electrochromic |
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統計 Statistics |
本論文已被瀏覽 5682 次,被下載 1363 次 The thesis/dissertation has been browsed 5682 times, has been downloaded 1363 times. |
中文摘要 |
對於各種各樣的光元件特別在電致變色領域上三氧化鎢薄膜是重要的材料。以射 頻濺鍍法沈積氧化鎢薄膜在導電玻璃底層(銦錫氧化物/玻璃)上,射頻功率100 瓦,透過氧化鎢陶瓷靶材,在10毫托的總氣壓下,氧和氬流量比率(0比1)沉積薄 膜。我們利用不同的氣體環境退火後增進氧化鎢薄膜電致變色的特性。 此外,混合氫氟酸和硝酸並溶解鎢金屬屬粉末, 將其用去離子水稀釋備製成長 溶液(氫氟酸鎢)加入濃度0.1莫耳的硼酸或鋁,在攝氏40度的環境下以液相沉積 法成長氧化鎢薄膜。 在我們的實驗過程中,以掃描電子顯微鏡觀察薄膜表面型態,以X光繞射分析其 結構,化學性能以X光電子能譜以及傅裡葉轉換紅外線光譜分析化學特性,以 spectrophotometer(MP-100 M)分析光學性能,以及以循環伏安儀觀察薄膜的電 致變色特性 . 在我們實驗結果中,我們發現以射頻濺鍍製成的氧化鎢薄膜在氧氣環境退火後的 光學與電致變色特性。另外也嘗試以液相沉積法藉由氟化物溶液在(銦錫氧化物/ 玻璃)基板上沉積氧化鎢薄膜。 |
Abstract |
Tungsten trioxide (WO3) films are important for various optical devices and especially for electrochromic materials. Sputtered WO3 thin films were deposited on conductive glass substrate (ITO/glass) by RF sputtering from a WO3 target(diameter 2”x 6 mm) in a reactive atmosphere of oxygen and argon flow ratio(0 to 1) mixture in a total gas pressure of 10m Torr. The RF power was 100W operating at 13.56MHz.We will improve the WO3 films by post-annealing in different atmosphere ambient. In addition, to prepare treatment solution of growing WO3 films were dissolved tungsten to aqueous which mixed hydrofluoric acid and nitric acid until it supersaturate. This solution was then diluted to 0.02 M of tungsten ions with distilled water. And we can get the treatment solution (WO3-HF aqueous). The WO3 thin films have been deposited at 40oC with the treatment solution (WO3-HF aqueous) which full of W ions, the 0.1M boric acid (H3BO3) solution and added aluminium metal by liquid phase deposition (LPD) technique. The deposition rate could be controlled to 45 nm/h. In our experiment, the WO3 films morphology and thickness was characterized by scanning electron microscopy(SEM), structure was characterized by X-ray diffraction(XRD), chemical properties was characterized by X-ray photoelectron spectroscopy(XPS) and Fourier transform infrared spectroscopy(FT-IR), optical properties was characterized by spectrophotometer(MP-100M), and electrochromic characterized by cyclic voltammetry(CHI627C). In our results, it will be improved the optical and electrochromic properties of sputtered-WO3 films by post-annealing in O2 ambient. we also have try a novel and very simple process for the thin films of WO3 by the LPD process. Adherent and conformal WO3 electrochromic films were prepared on ITO/glass from aqueous fluoride solution. |
目次 Table of Contents |
CHAPTER 1 …………………………………………………………………………1 INTRODUCTION........................................................................................................1 1-1 Background of Electrochromic.....................................................................1 1-2 Applications of Electrochromic Device........................................................3 1-3 Tungsten trioxide ...........................................................................................4 1-4 Motivation of RF sputtering .........................................................................4 1-5 Advantage of RF sputtering..........................................................................4 1-6 Motivation of LPD.........................................................................................5 1-7 Mechanisms of LPD.......................................................................................5 1-8 Advantage of LPD .........................................................................................6 REFERENCES.............................................................................................................9 CHAPTER 2...............................................................................................................10 EXPERIMENTS ........................................................................................................10 2-1 Preparation of Substrate.............................................................................10 2-1.1 ITO-coated glass Cleaning Procedures...........................................10 2-1.2 Photoresist coated(Lithography).....................................................10 2-2 PART I: Prepared by RF Sputtering.........................................................11 2-2-1 View of RF Sputtering Technique ...................................................11 2-2-2 The Process of Sputter-WO3 Films.................................................12 2-2-3 Thermal Treatment of WO3 Films by RF Sputtering ...................13 2-3 PART II: Prepared by Liquid Phase Deposition.......................................13 2-3-1 Liquid Phase Deposition System.....................................................13 2-3-2 Preparation of Deposition Solutions...............................................14 (a) Preparation of WO3-HFaq Solution.............................................14 (b) Preparation of H3BO3 Solution...................................................14 2-3-3 Deposition of LPD-WO3 Films ........................................................15 2-4 Characteristics of WO3 Films.....................................................................15 2-4-1 Physical Property .............................................................................15 (a) SEM (scanning electron microscopic)...........................................15 (b) XRD (X-ray diffraction) ................................................................15 2-4-2 Chemical Property ...........................................................................16 (a) XPS (X-ray photoelectron spectroscopy) ......................................16 (b) FTIR (Fourier transform infrared spectroscopy)...........................16 2-4-3 Optical Property (Spectrophotometer) ..........................................16 2-4-4 Electrochemical Property (Cyclic voltammetry)...........................16 CHAPTER 3...............................................................................................................24 IV RESULTS AND DISCUSSION ................................................................................24 3-1 Electrochromic Reaction.............................................................................24 3-2 PART I: Characteristics of Sputtered-WO3 Films....................................26 3-2-1 Physical Properties of Sputtered-WO3 Films ................................26 3-2-1.1 Deposition of Sputtered-WO3 Film......................................26 3-2-1.2 SEM view of Sputtered- WO3 Film .....................................26 3-2-1.3 XRD Patterns of Sputtered-WO3 Films ..............................27 3-2-2 Optical Properties of The Sputtered-WO3 Films ..........................28 3-2-3 Chemical Properties of The Sputtered-WO3 Films.......................29 3-2-3.1 XPS Analysis of The Sputtered-WO3 Films ........................29 3-3-3.2 FTIR Spectra of The Sputtered-WO3 Films .......................30 3-2-4 Electrochemical Property of The Sputtered-WO3 Films..............30 3-3 PART II: Characteristics of LPD-WO3 Films ...........................................32 3-3-1 Physical Properties of The LPD-WO3 Films..................................32 3-3-1.1 Deposition of LPD- WO3 Film .............................................32 3-3-1.2 SEM view of LPD-WO3 Film ...............................................32 3-3-1.3 XRD Patterns of LPD- WO3 Films ......................................32 3-3-2 Optical Properties of The LPD- WO3 Films ..................................33 3-3-3 Chemical Properties of The LPD-WO3 Films................................33 3-3-3.1 XPS Analysis of The LPD-WO3 Films.................................33 3-3-4 Electrochemical Property of LPD-WO3 Films ..............................34 REFERENCES...........................................................................................................81 CHAPTER4................................................................................................................83 CONCLUSIONS........................................................................................................83 |
參考文獻 References |
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