使用射頻磁控濺鍍法來成長m面(101 ‾0)氧化鋅薄膜在m面的藍寶石(sapphire)基板上，並且改變射頻功率、工作壓力以及氧氣與氬氣的比率等參數，找出結晶品質最佳的成長條件。薄膜的結構性質使用X光繞射儀來觀察，繞射結果顯示氧化鋅成長方向為純m面的成長方向。由光致螢光光譜圖可以發現，能隙能量大約為3.24 eV，在通氧氣成長下，普遍會出現鋅空缺的訊號。利用霍爾量測與FTIR測得的電漿頻率推算載子濃度，並比較其結果，其中結果顯示FTIR的結果會比霍爾量測大上許多，推測是導帶底部有帶尾(band tail)，使得在推算載子濃度的過程中，使用的電子有效質量過大的結果。

M-plane (101 ‾0) ZnO thin films were grown on m-plane sapphire (101 ‾0) substrates by RF magnetron sputtering. We varied the RF power, working pressure, and O2/Ar ratio to obtain the best growth conditions. Structural properties were investigated by X-ray diffraction(XRD). XRD measurements showed that the crystal orientation of ZnO films was non-polar m-plane (101 ‾0). In addition, photoluminescence (PL) spectrum showed the bandgap energy of ZnO films was about 3.24 eV. PL spectrum showed zinc vacancy signal for films grown in oxygen rich condition. Carrier concentration was measured by hall measurement as well as FTIR spectrometry. The results showed the carrier concentration calculated by optical measurements was higher than hall measurements. One possibility for this could be the band tail at the bottom of conduction band. This band tail can make the effective mass larger and thus influencing the optical carrier concentration.

摘要 I
Abstract II
致謝 III
目錄 IV
圖表目錄 VII
第一章、 序論 1
1-1 氧化鋅的物理特性 1
1-2 成長m面氧化鋅的基板 4
第二章、儀器原理與介紹 5
2-1 磁控濺鍍系統與原理[2] [3] 5
2-1-1 濺鍍(sputtering) 5
2-1-2 直流與交流濺鍍法 6
2-1-3 磁控濺鍍法 7
2-1-4 反應式濺鍍法 8
2-2 特性分析儀器 9
2-2-1 X光繞射儀[4] 9
2-2-2 掃描式電子顯微鏡[5] 10
2-2-3 光致螢光[5] 11
2-2-4 傅立葉轉換紅外線光譜儀(FTIR) [6] 13
2-3 霍爾量測[7] 14
2-3-1 霍爾棒量測 14
2-3-2 Van der Pauw 四點量測法[8] 16
第三章、實驗步驟 18
3-1 基板清洗與前置流程 18
3-2 薄膜的成長 20
第四章、實驗結果與分析 22
4-1 樣品成長參數 22
4-2 掃描式電子顯微鏡 25
4-3 X光繞射 37
4-3-1 調變RF power的結果比較 37
4-3-2 調變RF power的結果比較 41
4-3-3 調變氧氣與氬氣比率的結果比較 45
4-4光致螢光 49
4-4-1不同工作壓力成長的樣品之光致螢光光譜圖 49
4-4-2 不同氧氣與氬氣的比率成長的樣品之光致螢光光譜圖 51
4-5 傅立葉轉換紅外線光譜儀(FTIR) 53
4-5-1 背景知識 53
4-5-2 電漿頻率(plasma frequency) -自由電子的振盪[9] 54
4-5-3 實驗結果 56
第五章、結論 60
參考文獻 61

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