Title page for etd-0805110-175647


[Back to Results | New Search]

URN etd-0805110-175647
Author Ming-fong Hsieh
Author's Email Address No Public.
Statistics This thesis had been viewed 5098 times. Download 0 times.
Department Physics
Year 2009
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Study of m-plane ZnO Grown by Radio Frequency Magnetron Sputtering
Date of Defense 2010-07-09
Page Count 73
Keyword
  • sputtering
  • ZnO
  • non polar
  • m plane
  • working pressure
  • RF
  • FTIR
  • Drude model
  • plasma frequency
  • Abstract M-plane (101 ‾0) ZnO thin films were grown on m-plane sapphire (101 ‾0) substrates by RF magnetron sputtering. We varied the RF power, working pressure, and O2/Ar ratio to obtain the best growth conditions. Structural properties were investigated by X-ray diffraction(XRD). XRD measurements showed that the crystal orientation of ZnO films was non-polar m-plane (101 ‾0). In addition, photoluminescence (PL) spectrum showed the bandgap energy of ZnO films was about 3.24 eV. PL spectrum showed zinc vacancy signal for films grown in oxygen rich condition. Carrier concentration was measured by hall measurement as well as FTIR spectrometry. The results showed the carrier concentration calculated by optical measurements was higher than hall measurements. One possibility for this could be the band tail at the bottom of conduction band. This band tail can make the effective mass larger and thus influencing the optical carrier concentration.
    Advisory Committee
  • Min-Hsiung Tsai - chair
  • Chih-Hsiung Liao - co-chair
  • Der-Jun Jang - co-chair
  • Yung-Sung Chen - co-chair
  • Li-Wei Tu - advisor
  • Files
  • etd-0805110-175647.pdf
  • indicate not accessible
    Date of Submission 2010-08-05

    [Back to Results | New Search]


    Browse | Search All Available ETDs

    If you have more questions or technical problems, please contact eThesys