本研究在 900 oC 的溫度條件之下對矽單晶之 (001) 面進行單軸壓縮實驗並透過光學顯微鏡及掃瞄式電子顯微鏡來觀察壓縮後的試片表面，且利用穿透式電子顯微鏡探討不同應變量的試片，並配合微觀結構的解析，瞭解其滑移系統、差排移動，加工硬化行為。
　　眾所周知的，材料的機械性質隨著溫度產生變化，其強度逐漸地由室溫或低溫的脆性行為轉變成高溫的展性行為，在特定溫度或溫度區間呈現脆展性轉換 (brittle-to-ductile transition, BDT)。本實驗選擇矽在 BDT 溫度區間以上的溫度為實驗條件，在實驗過程中發現類似於金屬的加工硬化階段描述，並利用分析差排及滑移系統的結果推論出塑性變形時硬化進而破斷的行為。
　　我們觀察到類似第二階段 (差排相互糾結) 以及第三階段 (dislocation cell structure) 的微結構形貌特徵，同時發現差排具多個滑移系統且差排大多屬於 sessile dislocation 並推測硬化並最後斷裂的原因。也在少量應變量時發現了 partial dislocation、dislocation pole形成。

　In this study, the plastic deformation of (001) single crystal silicon at 900 oC is investigated by uniaxial compression along [001]. Using optical microscopy and scanning electron microscopy to observe the sample surface, and analysis the corresponding microstructure of different strain deformed silicon by transmission electron microscopy, particularly dislocation, slip systems and work hardening behaviour.
　Experimental temperature condition was chosen which over the BDT temperature range of silicon. We were found similar stages of work hardening described in metals and use the result of analysis dislocations and slip systems to suggest a hardening process of plastic deformation.
　The observations are similar to the feature in stage II (dislocation tangled) and stage III (dislocation cell structure). Partial dislocation and dipole are formed in less strained sample. We suggest a hardening process of plastic deformation from these results.

學位論文審定書
誌謝........................................................I
論文摘要...................................................II
Abstract..................................................III
目錄.......................................................IV
表目錄.....................................................VI
圖目錄....................................................VII
第一章 前言.................................................1
1.1 研究目的..............................................2
第二章 原理與文獻回顧.......................................3
2.1 矽的結構..............................................3
2.1.1 與鑽石結構相關的結晶結構..........................5
2.1.2 矽的脆展性轉換行為................................6
2.2 差排的形式............................................7
2.2.1 差排的分解........................................9
2.2.2 Peierls-Nabarro (PN) stress......................13
2.3 滑移系統與臨界分解剪應力.............................14
2.3.1 滑移系統 (Slip System)............................14
2.3.2 臨界分解剪應力 (Critical Resolved Shear Stress)..15
2.4 壓縮及拉伸變形時導致壓力軸向改變 (axis rotation).....17
2.4.1 壓縮及拉伸變形時的滑移系統改變...................18
2.5 應力應變曲線分析.....................................22
2.5.1 加工硬化 (work hardening)........................23
2.5.2 不同結構純金屬典型的應力應變曲線.................23
2.5.3 應力應變曲線相對應微結構.........................23
2.5.4 第四階段、第五階段...............................28
2.6 陶瓷的斷裂 (Fracture in Ceramics)....................29
2.7 差排產生的準則 (criterion)...........................31
2.8 脆展轉換溫度模型之運用...............................34
第三章 實驗步驟............................................39
3.1 Silicon 試片.........................................39
3.2 試片製備.............................................40
3.3 單軸壓縮試驗.........................................42
3.3.1 高溫壓縮試驗.....................................44
3.4 觀察設備及試片前處理.................................44
3.4.1 X光繞射分析 (XRD)................................44
3.4.2 光學顯微鏡 (OM)..................................45
3.4.3 掃描式電子顯微鏡 (SEM)...........................45
3.4.4 穿透式電子顯微鏡 (TEM)...........................46
第四章 實驗結果............................................48
4.1 試片晶向確認.........................................48
4.2 壓縮試片表面分析.....................................50
4.2.1 室溫條件.........................................50
4.2.2 溫度條件為 900 oC................................52
4.2.2.1 Slip Band 分析...............................52
4.2.2.2 Shear plane 分析.............................53
4.3 壓縮試片微結構分析...................................56
4.3.1 室溫下的試片觀察.................................56
4.3.2 900 oC 下應變量約 1% 的試片觀察..................57
4.3.2.1 部份差排.....................................62
4.3.2.2 dislocation dipole...........................67
4.3.3 900 oC 下應變量約 8% 的試片觀察..................68
4.3.4 900 oC 下應變量約 14% 的試片觀察.................74
第五章 討論................................................79
5.1 室溫壓縮試驗.........................................79
5.2 900 oC 試片表面分析..................................80
5.3 900 oC 應力應變曲線討論..............................81
5.4 900 oC TEM 微結構觀察................................82
5.4.1 試片B............................................82
5.4.2 試片C............................................83
5.4.3 試片D............................................83
第六章 結論................................................87
第七章 未來工作............................................88
參考資料...................................................89
附錄.......................................................95

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