本實驗架設主要以摻鈦藍寶石雷射(Ti：Sapphire)對不同生長方向的GaN和InN基板上的CuInSe2樣品進行光致螢光光譜(PL)的量測，實驗的主要探討方向為經由分子束磊晶法的樣品，藉由改變溫度和改變功率的量測光致螢光光譜(PL)並分析，了解其光學特性。
樣品主要以Cu-rich CIS長在N-polar和Ga-polar GaN上，In-rich CIS長在N-polar和Ga-polar GaN上，和CIS長在InN上三種類型做分析。從PL量測上，我們發現這些樣品有六個波峰，長在N-polar與Ga-polar GaN上的CIS，在光強度上有很大的差距。再藉由power law分析變功率光致螢光光譜出樣品的功率係數，了解樣品各峰是自由激子復合或是束縛激子復合。然後再藉由Arrhenius Plot來分析變溫光致螢光光譜得到其活化能的大小，再由活化能的大小可算出其施子(Donor)與受子(Acceptor)的束縛能(Binding energy)。

We use a Ti: Sapphire laser to study the photoluminescence (PL) spectral of CuInSe2/GaN and CuInSe2/InN. The sample we studied was made by MBE (molecular beam epitaxy). We observed the optical properties by temperature dependent and the power dependent PL to know the optical properties of the sample.
Those samples are CuInSe2 growth on N-polar and Ga-polar GaN and CuInSe2 growth on InN, and we used the PL measurement to analysis them. The PL spectrum had six peaks in our sample measurement, We use the power law to analysis the power dependent PL of samples to know about the recombination of excitons, and We can used the Arrhenius Plot to fit the active energy from temperature dependence PL, then the binding energy of donor and acceptor would be known from active energy.

論文審定書 i
致謝 ii
摘要 iii
Abstract iv
第一章 簡介 1
1.1 各種太陽能電池 1
1.2 使用GaN和InN作為基板 4
1.3 文獻探討 4
第二章 基本原理介紹 8
2.1 光致螢光光譜(PL) 8
2.2 載子非復合之能量釋放 8
2.3 電子與電洞復合之釋放能量方式 10
2.4 CuInSe2的缺陷詳細介紹 12
第三章 實驗原理與光路架設 15
3.1 Mai Tai Laser (Ti:sapphire Laser) 15
3.2 PL實驗光路與介紹 16
3.3 分子束磊晶法(Molecular beam epitaxy) 16
3.4 各樣品的載子濃度表 17
第四章 實驗結果與討論 19
4.1 樣品介紹 19
4.2 樣品XRD 繞射結構分析 20
4.3 其他論文CIS峰的PL光譜 22
4.4 In-rich CIS GaN 24
4.4.1 In-rich CIS GaN光致螢光光譜介紹 25
4.4.2 比較In-rich CIS 長在N-polar或Ga-polar GaN的PL光譜 26
4.4.3 功率係數 27
4.4.4 載子活化能 30
4.5 Cu-rich CIS GaN 34
4.5.1 Cu-rich CIS GaN光致螢光光譜介紹 35
4.5.2 比較Cu-rich CIS長在N-polar或Ga-polar GaN的PL光譜 37
4.5.3 功率係數 38
4.5.4 載子活化能 40
4.6 CIS InN 44
4.6.1 Cu-rich CIS GaN光致螢光光譜介紹 44
4.6.2 比較Cu-rich CIS長在N-polar或Ga-polar GaN的PL光譜 46
4.6.3 功率係數 47
4.6.4 載子活化能 48
第五章 結論 51
Reference 53

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