本論文中使用摻鈦藍寶石(Ti：sapphire)與單光子計數器系統(TCSPC)對生長在藍寶石基板c面上的氮化銦鎵(InGaN)多重量子井進行光激發螢光(PL)光譜與時間解析螢光(TRPL)光譜的量測。在變溫光激發螢光(PL)光譜中經過峰值擬合後發現氮化銦鎵(InGaN)的發光峰值會隨著溫度上升而呈現出S-shape這是因為局域態(Localized state)現象造成並且發現氮化銦鎵(InGaN)的縱向光學聲子能量約在86-90 meV區間，接下來在室溫發光波段約為457 nm其經由能帶公式(Band gap as function of In content)計算出銦(In)含量為19%，然後內部量子效率(IQE)會隨溫度上升而下降，其原因來自於加溫時會活化(Thermal active)非輻射複合中心以致發光效率下降，且在300K下IQE為29%。在TRPL也會發現發光波段的生命週期也會隨著溫度上升而有下降趨勢，其值分別在14 K與300 K下為14.32 ns與12.34 ns。從內部量子效率與生命週期的關係式計算出輻射發光複合生命週期與非發光輻射複合生命週期會個別隨隨溫度上升而上升和下降，我們發現輻射發光複合生命週期會跟Lasher-Stern mode跟T^(3⁄2)成正比，因為輻射發光複合是來自能帶對能帶(Band to band)，且根據輻射發光複合係數、載子濃度與輻射發光複合生命週期的關係：(1 )/τ_r =Bn得出輻射複合係數在300K為1.46×〖10〗^(-11) 〖cm〗^3 s^(-1)，最後計算歐傑活化能為8.17 meV。

We use a Ti: sapphire femtosecond laser and a Time Correlated Single Photon Counting (TCSPC) system to study optical properties of InGaN multi-quantum well on the c-plane sapphire substrate using photoluminescence (PL) and time-resolved photoluminescence (TRPL). In variation-temperature PL, we found InGaN emission peak exhibit S-shape with increasing temperature because of the localized state and longitudinal optical phonon energy of about 86-90 meV. The emission peak at the room temperature of about 457 nm could be obtained from band gap as function of In content at 19%. Subsequently, the internal quantum efficiency (IQE), 29% at 300 K, decreases with increasing temperature which is due to the thermal active non-radiative recombination centers that causes the luminous efficiency decreases. The carrier lifetime in the light emission decreases with increasing temperature (14.32 to 12.34 ns at 14 K and 300 K, respectively). The radiative and non-radiative lifetime obtained from IQE and carrier lifetime were shown to increase in radiative lifetime and to decrease in non-radiative lifetime, respectively, with increasing temperature. We found Lasher-Stern model to describe the radiative lifetime to be proportional to T^(3/2) which comes from the radiative recombination from band to band. Based on the radiative recombination, carrier concentration and radiative lifetime:(1 )/τ_r =Bn, we calculated the recombination coefficient of 1.46×〖10〗^(-11) 〖cm〗^3 s^(-1) at 300 K. Finally, the Auger activation energy was calculated to be 8.17 meV.

論文審定書………………………………………………………...…….i
致謝……………………………………………………………...………ii
摘要………………………………………………………...................iii
Abstract………………………………………………………………...iv
目錄………………………………………………………..................vi
圖目錄………………………………………………………………....viii
表目錄……………………………………………………………….....xi
第一章 導論………………………………………………………….....1
1.1前言……………………………………………………………….....1
1.2 發光二極體的結構…………………………………………….…...1
1.3相關文獻探討………………………………………………….…....2
第二章 基本原理………………………………………………….…....8
2.1光激發螢光光譜……………………………………………….…....8
2.2載子動力學……………………………………………………..…...9
2.3電子與電洞複合方式…………………………………………..…..11
2.4時間解析螢光光譜……………………………………………..…..13
第三章 實驗原理與光路架設………………………………….…...…15
3.1 Mai Tai Laser………………………………………………...……15
3.2 TP-2000B Tripler原理………………………………………........16
3.3 TCSPC (Time-Correlated Single Photo Counting)系統簡介....18
3.4實驗光路架設……………………………………………………....24
第四章 實驗結果與討論……………………………………………....25
4.1樣品資訊…………………………………………………………....25
4.2光激發螢光光譜…………………………………………………....26
4.3時間解析螢光光譜………………………………………………....38
第五章 結論…………………………………………………………....44
參考文獻…………………………………………………………….....45

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