對於光整合迴路，環形雷射為理想的光源，除了可製作微小之外，不需要切斷面仍然能達到操作的目的為環形雷射在製程整合上取得重視的好處之一。在環形雷射激光放射時，會有光同時存有順時及逆時兩種方向的特性，而若能使得元件形成單一方向行進波共振，則常見於F.P.和DFB雷射的空間燃燒效應問題就能被消除。本論文上，單一方向共振藉由波導形狀的設計來達成。整個雷射共振腔藉由四個全反射鏡圍繞和一個漸變式耦合波導所組成。
藉由BPM程式模擬，漸變式波導的結構會使得順向及逆向產生不同的損耗差異，意即藉由漸變式波導的設計，腔體中的其一道光能被消除。除此之外，轉彎損耗、模態轉換損耗，及元件增益都納入考慮中。
整個元件分成下列幾個步驟: (1)離子佈植(2)藉由選擇性蝕刻製作波導(3)N型及P型金屬的蒸鍍(4)Si3N4絕緣層濺鍍(5)平坦化製作(6)最後蒸鍍共平面電極。

Semiconductor ring laser diodes (SLD) have been receiving attention for their potential use as source in photonic integrated circuits. Advantages of a ring laser include ease of integration because of no need for cleaved facets and they can be made very
compact by folding their cavity .
Ring laser have a unique feature, clockwise and counter- clockwise, in their lasing modes. If unidirectional traveling-wave oscillation can be achieved, spatial hole burning effects seen in Fabry-Perot and distributed feedback lasers can be avoided. In this work, the unidirectional oscillation is accomplished by controlling the taper shape structure. The whole laser cavity is formed using four reflection mirrors (TIR) and an output coupler passive
waveguide.
According to the Beam propagation Method (BPM) simulation, we find that the clockwise and counterclockwise oscillations have different behavior under various taper shape , indicating bidirectional oscillation can be eliminated. Moreover, bending loss、mode transformation and optical gain are all included in calculation
model.
The waveguide is fabricated in the following steps: (1) ion implantation to get electrical isolation (2) selectively wet etching to form waveguide ridge (3) evaporation n- and p- electrode (4)spatter with Si3N4(5) planarization (6) evaporation microwave transmission line.

目錄5
中文摘要2
英文摘要3
誌謝4
目錄5
第一章 緒論 7
1.1前言7
1.2研究動機8
1.3論文架構11
第二章 理論背景12
2.1雷射基本的概述12
2.2 四種基本載子復合與光子產生機制14
2.3雷射基本方程16
2.3.1連續方程16
2.3.2臨界點17
2.3.3 基本雷射輸出功率對輸入電流特性18
2.4 空間燃燒效應19
2.5 光耦合器及工作原理20
第三章 波導模擬與設計24
3.0 雷射元件的驅動24
3.1.0 單一方向操作24
3.1.1 漸變式波導耦合器25
3.1.2 不同方向的光損耗26
3.1.3 元件結構最佳化 28
3.2 全反射鏡31
3.3 材料增益33
3.4 光在共振腔中循環一周34
3.5 折射率理論模型37
3.6結論38
第四章 實驗 39
4.1 元件製作步驟40
4.1.1 離子佈植刻痕蝕刻42
4.1.2 P型金屬蒸鍍42
4.1.3 P型接觸層蝕刻43
4.1.4 P型包覆層(P-Cladding)蝕刻45
4.1.5主動層(Active Region)底切蝕刻48
4.1.6 PMGI塗佈51
4.1.7 N型金屬接觸層/包覆層蝕刻51
4.1.8 N型金屬蒸鍍53
4.1.9被動波導(Passive Waveguide) 蝕刻54
4.1.10 Mesa蝕刻55
4.1.11 平坦化製作56
4.1.12共平面波導蒸鍍57
4.1.13製作元件的分割線58
第五章 量測 59
5.1 元件的I-V曲線59
5.2 元件的L-I曲線60
5.3 損耗量測61
5.4 結論64
參考文獻65

參考文獻
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