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博碩士論文 etd-0807108-144443 詳細資訊
Title page for etd-0807108-144443
論文名稱
Title
利用熱混合方式達成製作波長匹配的鏈狀式 電致光吸收調變器與光放大器整合
Wavelength Match Chain-integrated EAM and SOA Using Quantum Well Intermixing
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
63
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2008-07-17
繳交日期
Date of Submission
2008-08-07
關鍵字
Keywords
光放大器、電致光吸收調變器、晶格缺位擴散、熱混合擴散
IFVD, SOA, EAM, intermixing
統計
Statistics
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中文摘要
材料能隙工程在整合光電元件上是很重要的技術。藉由材料擴散的方式改變量子井內部結構來調整材料能隙,熱混合擴散技術已被廣泛的使用在材料能隙工程上,因能簡單化且能夠在晶片上區域性的調整。電致光吸收調變器與光放大器在光電領域中是必要的元件,利用調整能隙的方式使得電致光吸收調變器與光放大器的能隙匹配因此更能最佳化兩者之間的整合度。在本文中我們利用其中一種熱混合擴散的方法-內部晶格擴散,來輔助整合電致光吸收調變器與光放大器元件。元件的設計上,鏈狀式電致光吸收調變器整合光放大器是為了高速調變與降低雜訊,完整製程中不需要使用到重複磊晶的方式。最後我們已成功的利用內部晶格擴散的方法使電致光吸收調變器藍位移20nm。
Abstract
The band-gap engineering is an important technique for integration of optoelectronic devices. Using the inter-diffusion of atoms in the quantum well structure, Quantum-Well Intermixing (QWI) technique has been widely used for band-gap engineering due to its simple process and capability of local tuning in chip. Electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) are two essential devices in optoelectronic field. The band-gap engineering is needed to get optimized performance in integration of EAM and SOA because of the energy level offset in both material structures. In this work, an simple QWI technique, called impurity free vacancy diffusion (IFVD), is employed to integrate EAM and SOA. In the device design, a chain structure of EAM-integrated SOA is used for high-speed and low-noise performance. No re-growth step is needed in the whole device process. An good property EAM with blue shift of 20nm from SOA portion is achieved from this IFVD method.
目次 Table of Contents
中文摘要………………………………………………2
英文摘要………………………………………………3
致謝……………………………………………………4
目錄……………………………………………………5
第一章 簡介………………………………………… 7
1-1 前言……………………………………………… 7
1-2 研究動機………………………………………… 8
1-3鏈狀式電致光吸收調變器與光放大器結構…… 14
1-4論文架構……………………………………… 15
第二章 理論與程式模擬……………………………17
2-1熱混合擴散效應…………………………………17
2-2電致光吸收調變器與光放大器…………………18
2-3模擬熱混合擴散下之量子井定義……………21
2.3.1 熱混合效應下能帶結構的改變…………22
2.3.2 量子井基態能階與波函數計算……28
第三章熱混合的方法與整合元件的製作…………34
3.1 熱混合製程的方式…………………………38
3.2 元件的製作…………………………………39
3.2.1 氫離子佈植和蒸鍍p型接觸金屬…… 41
3.2.2 蝕刻光波導與主動層………………… 42
3.2.3 蒸鍍N型接觸金屬…………………… 45
3.2.4 平坦化製程…………………………… 47
3.2.5 蒸鍍共平面電極……………………… 48
3.3 製程結論…………………………………… 50
第四章 元件特性量測與討論……………………51
4-1金屬半導體接觸電阻…………………………51
4-2鏈狀式EAMSOA光電流頻譜量測…………… 53
4-3 元件量測問題與討論………………………… 57
第五章 結論…………………………………………58
第六章 參考文獻……………………………………59
參考文獻 References
[1] P. N. K. Deenapanray, H. H. Tan, M. I. Cohen, K. Gaff, M. Petravic, and C. Jagadish, “Silane Flow Rate Dependence of SiOx Cap Layer Induced Impurity-Free Intermixing of GaAs/AlGaAs Quantum Wells,” Journal of The Electrochemical Society, Vol.147, 2000.
[2]D. L. Green and E. L. Hu, ”Effect of superlattices on the low-energy ion-induced damage in GaAs/Al(Ga)As structures,” J. Vac. Sci. Technol. B 12(6),Nov/Dec 1994
[3] H. S. Diie and T. Mei, ”Plasma-Induced Quantum Well Intermixing for Monolithic Photonic Integration,” IEEE Journal of Selected Topics in Quantum Electronics, Vol. 11, No. 2, March/April 2005
[4] H. S. Djie, T. Mei, J. Arokiaraj, C. Sookdhis, S. F. Yu, L. K. Ang, and X. H. Tang, ”Experimental and Theoretical Analysis of Argon Plasma-Enhanced Quantum-Well Intermixing,” IEEE Journal of Quantum Electronics, Vol. 40, No. 2, February 2004
[5] S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, ”Photonic Integrated Circuits Fabricated Using Ion Implantation,” IEEE Journal of Selected Topics in Quantum Electronics, Vol. 4, No. 4, July/August 1998.
[6] O. P. Kowalski, C. J. Hamilton, S. D. McDougall, J. H. Marsh, A. C. Bryce, “A universal damage induced technique for quantum well intermixing,” Appl. Vol. 72, 5 Number /2 February 1998.
[7] B. Xiong, J. Wang, L. Zhang, J. Tian, C. Sun, and Y. Luo, “ High-Speed (>40 GHz) Integrated Electro-absorption Modulator Based on Identical Epitaxial Layer Approach,” IEEE 2005
[8] S. L. Chuang,“Physics of Optoelectronic Devices,”John Wiley & Sons,Inc,1995.
[9] J. Minch, S. H. Park, T. Keating, and S. L. Chuang,“Theory and Experiment of In1-xGaxAsyP1-y and In1-x-yGaxAlyAs Long-Wavelength Strained Quantum-Well Lasers, ” IEEE Journal of Quantum Electronics, Vol.35, No.5,May 1999.
[10]D. M. Baney, P. Gallion “Theory and Measurement Techniques for the Noise Figure of Optical Amplifiers,” Optical Fiber Technology, June 2000.
[11] E. H. Li, ”Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures,” Physica E:Low-dimensional Systems and Nanostructures, Vol. 5, 1 March 2000.
[12] I. Gontijo, T. Krauss, J. H. Marsh, and R. M. De La Rue, “Postgrowth control of GaAs/AlGaAs quantum well shapes by impurity-free vacancy diffusion,” IEEE Journal of Quantum Electronic, vol. 30, May 1994.
[13] L.J. Guido, N. Holonyak, K. C. Hsieh, R. W. Kaliski, and W.E. Plano, “Effects of dielectric encapsulation and As overpressure on Al-Ga interdiffusion in AlGaAs/GaAs quantum well heterostructures,” Journal Appl. Phys. 61(4), 15 February 1987
[14] O. BS, M. K, Street MW, ”Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion” IEEE Journal of quantum electronic Vol. 33 , October 1997
[15] S. SK, Y. DH, Y. KH, ” Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion,” IEEE Journal of Selected Topics in Quantum Electronics Vol.4, July/August 1998
[16]J. E. Epler, F.A. Ponce, F.J. Endicott, and T.L. Paoli, “Layer disordering of GaAs/AlGaAs superlattices by diffusion of laser-incorporated Si,” J. Appl. Phys. 64(7), 1 October 1988.
[17] E. H. Li, and B. L. Weiss, “Analytical Solution of the Subbands and Absorption Coefficients of AlGaAs/GaAs Hyperbolic,” IEEE Journal of quantum electronic, Vol. 29, No. 2. February 1993
[18] H. Kroemer, “Quantum Mechanics: For Engineering, Materials Science and Applied Physics, ” Prentice Hall, 1994
[19] 李政鍵 ,”Unsymmetry Spiked-Quantum Well Design and Electroabsorption Modulators Based on the InAlAs/InGaAlAs Material System,”2004
[20] R. JW, J. LA, S. EJ,” 40 Gbit/s photonic receivers integrating UTC photodiodes with high- and low-confinement SOAs using quantum well intermixing and MOCVD regrowth,” electronic letter Vol.42, 3 August 2006.
[21]V. Hofsass, J. Kuhn, C. Kaden, “Optical integration of laterally modified multiple quantum well structures by implantation enhanced intermixing to realize gain coupled DFB lasers,” NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 104, December 1995
[22] D. Hofstetter, B. Maisenholder, and H. P. Zappe, “Quantum-well intermixing for fabrication of lasers and photonic integrated circuits,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, July/August 1998.
[23]R. JW, J. LA, S. EJ, ”40-Gb/s widely tunable low-drive-voltage electroabsorption-modulated transmitters,” Jouenal of lightwave technology, Vol. 25, JAN 2007.
[24] A. V. Barve and U. Das, “Design of a Grating-Assisted Lateral Directional Coupler by Impurity-Induced Quantum-Well Intermixing of InGaAs/GaAs,” Journal of Light-wave technology, Vol. 25, No. 9, September 2007.
[25]W. J. Choi, H. T. Yi, and J. I. Lee, “Dependence of the Intermixing in InGaAs/InGaAsP Quantum Well on Capping Layers,” Journal of the Korean Physical Society, Vol. 45, No. 3, September 2004.
[26]J. S. Yu and K. S. Chung, “Effect of the property of dielectric capping layers on impurity-free vacancy diffusion in InGaAs/InGaAsP MQW structures,” Semicond. Sci. Technol. 22 (2007)
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