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博碩士論文 etd-0807116-001336 詳細資訊
Title page for etd-0807116-001336
論文名稱
Title
利用時變兆赫波研究極性與非極性氧化鋅之光學特性
Study of optical properties of polar and non-polar ZnO using Terahertz time domain spectroscopy
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
63
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2016-07-27
繳交日期
Date of Submission
2016-09-07
關鍵字
Keywords
導電率、德魯德模型、退火、折射率、兆赫波時域、氧化鋅
annealing, THz-TDS, Drude model, ZnO, refractive index, conductivity
統計
Statistics
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中文摘要
在本論文中我們研究C平面生長的氧化鋅與A平面的氧化鋅在兆赫波段下的光學性質,A平面生長的氧化鋅做熱退火,觀察退火前後光學性質的變化。分別計算出各種平面氧化鋅的折射率與消光係數,進而算出導電率,最後以Drude model做擬合,得到載子濃度和遷移率,而a平面的氧化鋅經過熱退火,載子濃度會明顯增加。
Abstract
In this thesis we have studied the frequency dependent optical properties for polar and non-polar ZnO. We found the signals in the same axis perform identically and have similar data.We observed A-plane ZnO optical properties before and after annealing.Calculating refractive index, extinction coefficient and conductivity.Finally,we use Drude model to fit data and obtain carrier concentration and mobility. In A-plane ZnO case,there is a mobility increase before and after annealing.
目次 Table of Contents
目錄
論文審定書 i
致謝 ii
摘要 iii
Abstract iv
第一章 導論 1
1-1前言 1
1-2 兆赫波發展史 2
1-3產生兆赫波 3
1-4 文獻探討-兆赫波對樣品之相關研究 5
第二章 實驗原理 10
2-1光電導偶極天線產生及偵測兆赫波原理 10
2-2 光電導偶極天線產生及偵測兆赫波原理 10
2-3敘述ZnTe、Balance detector 13
2-4實驗數據分析原理 14
第三章 實驗系統架設 19
3-1光路架設 19
3-2詳細介紹Mai Tai Laser以及PC-antenna 22
3-3介紹鎖相放大器(Lock-in,SR850) 24
3-4詳細說明Balance Detector 25
第四章 樣品介紹與實驗結果 26
4-1 樣品介紹(c-plane ZnO and a-plane ZnO) 26
4-2 實驗結果 28
第五章 結論 57
參考文獻 58
參考文獻 References
1.M. Tonouchi, “Cutting-edge terahertz technology”, Nat. Photonics 1, 97 (2007).
2.B. B. Hu, X. C. Zhang, D. H. Auston, and P. R. Smith, “Free‐space radiation from electro‐optic crystals”, Appl. Phys. Lett. 56 , 506 (1990).
3. A. Rice, Y. Jin , X.-F. Ma, X.-C. Zhang , D. Bliss, J. Perkin , and M. Alexander, “Terahertz optical rectification from〈110〉zinc‐blende crystals”, Appl. Phys. Lett. 64, 1324 (1994).
4. U. Ozgur, D. Hofstetter, and H. Morkoc,“ZnO Devices and Applications: A Review of Current Status and Future Prospects”, Proceedings of the IEEE, 98, 1255 (2010).
5.U. Ö zgü r, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğ an, Avrutin, S.-J. Cho and H. Morkoç, “A comprehensive review of ZnO materials and devices”, J. Appl. Phys. 98, 041301 (2005).
6. B.H. Choi,H.B. Im,J.S. Song,K.H. Yoon,“Optical and electrical properties of Ga2O3-doped ZnO films prepared by r.f. sputtering”,Thin Solid Films. 193, 712 (1990).
7.N.D. Md Sin, M.Fuad Kamel, Rosalena Irma Alip, Zulfakri Mohamad, and M.Rusop, “The Electrical Characteristics of Aluminium Doped Zinc Oxide Thin Film for Humidi-ty Sensor Application”, Advances in Materials Science and Engineering. 2001, 1155 (2011).
8.Y.W. Heo, M.P.Ivill, K. Ip, D.P.Norton, S.J. Peartona, J.G. Kelly, R. Rairigh, A.F. Hebard, T. Steiner, “Effects of high-dose Mn implantation into ZnO grown on sapphire”, Appl. Phy. Lett. 84, 2292 (2004).
9.X.-C. Zhang, “Introduction to THz Wave Photonics”, Springer, (2010).
10. G. Mourou, C. V. Stancampiano, A. Antonetti, and A. Orszag, “Picosecond microwave pulses generated with a subpicosecond laser‐driven semiconductor switch”, Appl. Phys. Lett.39, 295 (1981).
11.D. H. Auston, K. P. Cheung, and P. R. Smith, “Picosecond photoconducting Hertzian dipoles”, Appl. Phys. Lett. 45, 284 (1984).
12. Ch. Fattinger and D. Grischkowsky, “ Point source terahertz optics”, Appl. Phys. Lett. 53, 1480 (1988).
13. J. T. Darrow, X.-C. Zhang, D. H. Auston, and J. D. Morse , “Saturation properties of large-aperture photoconducting antennas”, IEEE. 28, 6 (1992).
14. K. Liu, A. Krotkus, K. Bertulis, J. Xu, and X.-C. Zhang, “Terahertz radiation from n-type GaAs with Be-doped low-temperature-grown GaAs surface layers”, J. Appl. Phys, 94, 3651 (2003).
15.M. A. Mohamed, P. T. Lam, and N. Otsuka, “Non-equilibrium critical point in Be-doped low-temperature-grown GaAs”, J. Appl. Phys. 113, 053504 (2013)
16.S. Rihani, R. Faulks, H. E. Beere, I. Farrer, M. Evans, D. A. Ritchie, and M. Pepper, “Enhanced terahertz emission from a multilayered low temperature grown GaAs structure”, Appl. Phys. Lett. 96, 091101 (2010).
17.M. Currie, F. Quaranta, A. Cola, E. M. Gallo, and B. Nabet , “Low-temperature grown GaAs heterojunction metal-semiconductor-metal photodetectors improve speed and efficiency” , Appl. Phys. Lett. 99, 203502 (2011).
18.J. N. Heyman, N. Coates, A. Reinhardt, and G. Strasser, “Diffusion and drift in terahertz emission at GaAs surfaces”, Appl. Phys. Lett. 83, 5476 (2003).
19.N. Katzenellenbogen and D. Grischkowsky, “Electrical characterization to 4 THz of N‐ and P‐type GaAs using THz time‐domain spectroscopy”, Appl. Phys. Lett. 61, 840 (1992)
20. L. Duvillaret, F. Garet, and J. L. Coutaz, IEEE. 2, 739 (1996).
21.W. Zhang, Abul K. Azad, and D. Grischkowsky, “Terahertz studies of carrier dynamics and dielectric response of n-type, freestanding epitaxial GaN”, Appl. Phys. Lett. 82, 2841 (2003)
22. Do Kyu Lee, Sung Kim, Min Choul Kim, Sung Hwan Eom, Hyoung Taek Oh,and S.-H. Choi, “Annealing Effect on the Electrical and the Optical Characteristics of Undoped ZnO Thin Films Grown on Si Substrates by RF Magnetron Sputtering”, Korean Phys. Soc. 51, 1378 (2007).
23.Z. Zhou, A.-T. Chen, L.-S. Feng, X.-J. Xin, and C.-X. Yu, “Terahertz generation anddetection setup based on pump-probe scheme”, Microwave and Optical Technology Letters. 51, 1617 (2009).
24. H. C. Guo, X. H. Zhang, W. Liu, A. M. Yong, and S. H. Tang, “Terahertz carrier dynamics and dielectric properties of GaN epilayers with different carrier concentrations”, J. Appl. Phys. 106, 063104 (2009).
25. X. H. Zhang, H. C. Guo,A. M. Yong, J. D. Ye,S. T. Tan and X. W. Sun, “Terahertz dielectric response and optical conductivity of n-type single-crystal ZnO epilayers grown by metalorganic chemical vapor deposition”, J. Appl. Phys. 107, 033101 (2010)
26. H. Ahn, J.-W. Chia,H.-M. Lee, Y.-L. Hong, and S. Gwo, “Mg-induced terahertz transparency of indium nitride films”, Appl. Phys. Lett. 99, 232117 (2011)
27. A. Gauthier-Brun, J. H. Teng, E. Dogheche, W. Liu, A. Gokarna, M. Tonouchi, S. J. Chua, and D. Decoster, “Properties of InxGa1−xN films in terahertz range”, Appl. Phys. Lett. 100, 071913 (2012)
28.G. Mourou, C. V. Stancampiano, A. Antonetti, and A. Orszag, “Picosecond microwave pulses generated with a subpicosecond laser‐driven semiconductor switch”, Appl. Phys. Lett. 39, 295 (1981).
29. L. Duvillaret, F. Garet, and J. L. Coutaz, IEEE. 2, 739 (1996).
30.X. Zou, M. He, D. Springer, D. Lee, S. K. Nair, “Effect of annealing on the temperature-dependent dielectric properties of LaAlO3 at terahertz frequencies”, AIP Advances. 2, 012120 (2012).
31.Hanada, T.. “Oxide and Nitride Semiconductors Advances in Materials Research”, Springer. p1–19 (2009).
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