本實驗架設主要是以摻鈦藍寶石雷射(Ti: Sapphire)與時間相關單光子計數系統(Time-Correlated Single Photon Counting, TCSPC)為主，對二維(Two dimension, 2D)結構硒化鎵(Gallium selenide, GaSe)進行光致螢光(Photoluminescence, PL)光譜與時間解析螢光(Time-resolved photoluminescence, TRPL)光譜的研究。
實驗樣品由垂直布里奇曼生長法(Vertical bridgman method)所成長，藉由改變(1)溫度、(2)螢光能量以及(3)激發光功率來探討二維結構硒化鎵的光學特性。由2D GaSe的光致螢光光譜可以在2.1 eV及2eV的位置觀察到發光，分別為自由激子和束縛激子所貢獻。隨著溫度上升自由激子發光(2.1eV)有紅移的現象，而束縛激子(2eV)則有先紅移再藍移再紅移的現象，我們利用Varshni關係式解釋紅移的現象，並由Arrhenius plot擬合變溫光致螢光光譜了解其活化能大小。在變激發功率光致螢光光譜實驗中，我們藉由Power Law計算不同的溫度環境下其功率係數並觀察不同溫度造成的冪次變化。
在時間解析螢光光譜實驗中觀察載子的生命週期，並計算其內部量子效應(Internal quantum efficiency)，分析其載子發光輻射復合以及非發光輻射復合之效應。

In this research, we used a Ti:sapphire pulse laser and TCSPC(Time-Correlated Single Photon Counting) system to study optical properties and TRPL (time-resolved photoluminescence) of the two-dimension gallium selenide (2D GaSe). The sample we have studied was made by vertical bridgman method.
In temperature dependent PL experiment, there are two peaks which were provided by the free exciton and bound exciton. By using Varshni relation, we can explain that why the peaks exhibit the shift with temperature increasing. Also, Arrhenius plot is for calculating the activation energy.
In order to observe the relationship of Power dependent PL via changing excitation power and temperature , the power law have been used to show the result.
TRPL experiment showed the lifetime of the carrier recombination depends on temperature, excitation power and wavelength. We also calculate the IQE(Internal quantum efficiency) to explain lifetime, luminescence lifetime and non-luminescence lifetime. In addition non-luminescence lifetime will become shorter with temperature increasing.

論文審定書 i
致謝 ii
摘要 iii
Abstract iv
目錄 v
圖次 vi
表次 x
第一章 導論 1
1.1 前言 1
1.2 二維材料簡介 1
1.3 GaSe結構與基本特性 3
1.4 相關文獻探討 5
第二章 基本原理介紹 10
2.1 光致螢光(PL)光譜 10
2.2 時間解析螢光(TRPL)光譜 12
2.3 導電帶載子非復合之能量釋放 13
2.4 電子與電洞復合之釋放能量方式, 14
2.5 GaSe的載子躍遷 16
第三章 實驗原理與光路架設 18
3.1 Mai Tai Laser 18
3.2 TP-2000B Tripler 19
3.3 TCSPC系統簡介 22
3.4 實驗光路架設 28
3.5 其他儀器原理與光學元件介紹 29
第四章 實驗結果與討論 38
4.1 樣品介紹 38
4.1.1 二維硒化鎵(2D GaSe) 38
4.1.2 拉曼散射光譜 42
4.1.3 X-ray繞射結構圖 43
4.1.4 掃描式電子顯微鏡 44
4.2 光致螢光光譜分析(PL) 46
4.2.1 光生載子濃度計算 46
4.2.2 變溫光致螢光光譜(Temperature dependent PL) 47
4.2.3 活化能 (Activation energy) 61
4.2.4 變功率光致螢光光譜(Power dependent PL) 64
4.3 時間解析螢光光譜分析(TRPL) 71
4.3.1 雷射訊號生命週期 71
4.3.2 變螢光能量TRPL 73
4.3.3 變溫TRPL 74
4.3.4 變激發功率TRPL 75
4.3.3 螢光時間解析比較 76
第五章 結論 86
參考文獻 87

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