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博碩士論文 etd-0809111-170908 詳細資訊
Title page for etd-0809111-170908
論文名稱
Title
氮化銦鎵太陽能電池製作與研究
Fabrication and Characterization of InGaN Solar Cell
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
96
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2011-07-04
繳交日期
Date of Submission
2011-08-09
關鍵字
Keywords
氮化銦鎵太陽能電池、矽太陽能電池、電漿輔助分子束磊晶、硼矽氧化物、光致螢光
photoluminescence, Borosilicafilm, PA-MBE, Silicon solar cell, InGaN solar cell
統計
Statistics
本論文已被瀏覽 5751 次,被下載 803
The thesis/dissertation has been browsed 5751 times, has been downloaded 803 times.
中文摘要
本實驗分兩部分,矽太陽能電池製程上主要是利用在n-type矽(111)基板上旋鋪Borosilicafilm的溶液並且透過高溫爐管進行擴散,形成p-n接面。接著,利用電子束蒸鍍系統鍍上電極以及底電極。另一部分為利用電漿輔助分子束磊晶系統(PA-MBE)長在藍寶石基板上的氮化銦鎵太陽能電池之元件製作,透過反覆的黃光微影、感應式耦合電漿蝕刻機及濕式蝕刻的方法將樣品定義出元件的大小(mesa)後,再蝕刻至n 型氮化鎵層,最後再鍍上電極製程出一顆一顆的元件。
最後在量測上,主要利用太陽能模擬器模擬AM1.5G的光源,並對元件進行照光之I-V量測,藉此觀察樣品的開路電壓、短路電流、填充因子及轉換效率。另外,利用入射光轉換效率系統進行外部量子效率量測,主要藉此觀察各波長的光對不同參數之樣品的光電轉換效率。透過XRD觀察氮化銦鎵樣品的成長品質以及銦摻進氮化鎵的含量。透過變溫的光致螢光光譜觀察氮化銦鎵能隙的變化。
Abstract
The experiment divided into two parts. One is silicon solar cell process. The other is InGaN solar cell process. Borosilicafilm solution spin onto the n-type silicon (111) substrate and spread through the high-temperature furnace tube to form a p-n junction silicon solar cell. Then, evaporate top and rear contact by electron beam evaporation system. InGaN p-i-n structure solar cell grows on sapphire substrate by plasma-assisted molecular beam epitaxy system (PA-MBE) and its process is by repeated photolithography, inductive coupled plasma etching and wet etching. In the device fabrication process, the first is defining the sample size(mesa). Second, etched to the n-type GaN layer, and then coated metal as electrode. Finally, we get the device.

In the measurement, the measurement of I-V curve of samples in the light by solar simulator of AM1.5 G light source observe open circuit voltage, short circuit current, fill factor, and efficiency. In addition, we measure the external quantum efficiency of the samples by IPCE and observe the photoelectric conversion efficiency of samples at different wavelength. Observed the sample quality and the indium composition of InGaN layer by XRD. We observe the InGaN band gap shift by variable-temperature photoluminescence spectra.
目次 Table of Contents
摘要 ............................................................................................................. III
Abstract ....................................................................................................... IV
目錄 .............................................................................................................. V
圖目錄 ........................................................................................................ VII
表目錄 .......................................................................................................... X
第一章 序論 ............................................................................................... 1
1.1 太陽能電池簡述 ................................................................................. 1
1.2 矽太陽能電池歷史[2][3] ....................................................................... 1
1.3 氮化銦鎵簡介 ..................................................................................... 2
1.4 研究動機和目的 ................................................................................. 5
第二章 實驗原理與基礎[1] ........................................................................ 6
2.1 p-n接面太陽能電池基礎 ................................................................... 6
2.2 光生伏特效應 ..................................................................................... 7
2.3太陽能電池性能表徵 .......................................................................... 7
2.4 外部量子效率 ..................................................................................... 9
2.5 疊層電池 ............................................................................................. 9
第三章 儀器介紹 ....................................................................................... 11
3.1 高溫管狀爐 (Furnace) ..................................................................... 11
3.2 電子束蒸鍍 (Electron beam evaporation) ....................................... 12
3.3 快速熱退火 (Rapid thermal annealing, RTA)[23] ............................ 14
3.4 光學微影系統 (Mask aligner and exposure system) ...................... 16
3.5 感應耦合電漿蝕刻機 (ICP-etching)............................................... 17
3.6 太陽能模擬器 (Solar simulator) ..................................................... 19
3.7 入射光子轉換效率量測系統 (Incident photon conversion efficiency, IPCE) ...................................................................................... 22
3.8 掃描式電子顯微鏡 (Scanning electron microscope, ...................... 24
3.9 能量色散譜儀 (Energy Dispersive Spectroscopy, EDS) ................ 27
3.10 高解析度X射線繞射儀 (High-resolution X-ray diffraction) ..... 28
第四章 矽太陽能電池成長、製備與結果討論 ....................................... 33
4.1 樣品製備(一) .................................................................................... 33
4.1.1 樣品成長參數 ............................................................................. 34
4.1.2 不同擴散溫度之電壓電流圖的結果與討論 ............................ 36
4.1.3不同n型接點之電壓電流圖的結果與討論 ............................. 39
4.2 樣品製備(二) .................................................................................... 41
4.2.1 樣品成長參數 ............................................................................. 42
4.2.2 不同擴散時間對電壓電流圖的結果與討論 ............................ 44
第五章 氮化銦鎵太陽能電池成長、製備與結果討論 ........................... 46
5.1 樣品成長參數 ................................................................................... 46
5.2 元件製程 ........................................................................................... 48
5.3 二次電子影像 ................................................................................... 52
5-4 X射線繞射........................................................................................ 54
5.5 光致螢光 ........................................................................................... 61
5.6 時間解析光致螢光光譜 ................................................................... 65
5.7 電流-電壓曲線 ................................................................................. 68
第六章 結論 ............................................................................................. 70
Reference ..................................................................................................... 71
附錄A:成長於矽基板上的氮化銦鎵太陽能電池成長參數及研究 ..... 73
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