本研究主要利用Sezawa模態表面聲波(SAW)元件製作出應用於人類免疫球蛋白E (IgE)檢測之過敏感測器；為了研製Sezawa模態表面聲波元件，本研究於Si3N4/Si基板上藉由射頻磁控濺鍍法沉積氧化鋅(ZnO)薄膜，並針對沉積參數之影響進行探討。藉由X光繞射儀與掃描式電子顯微鏡對ZnO薄膜進行物性分析，得到具有高c軸優選取向之ZnO薄膜。
於本研究中，採用背蝕型共振腔，利用濕式蝕刻製程蝕刻(100)晶向Si晶圓之背部空腔以作為感測區，並利用低壓化學氣相沉積(LPCVD)法沉積低應力之氮化矽薄膜作為蝕刻遮罩以完成表面聲波元件。為了探討表面聲波元件之感測特性，本研究藉由沉積金(Au)薄膜於表面聲波元件之感測區中以作為生醫感測器之附著層，並利用氧電漿系統處理金薄膜表面，以提高金薄膜之親水性。利用自我組裝單分子膜技術(SAMs)對金薄膜表面進行修飾，再利用三明治酵素連結免疫吸附法(Sandwich ELISA)檢測人類免疫球蛋白E之濃度變化，以網路分析儀E5071C量測元件之頻率響應。經由實驗結果得知，Sezawa模態表面聲波元件之共振頻率為1.49 GHz；且經由計算得知，Sezawa模態表面聲波元件於人類免疫球蛋白E之檢測，其元件之靈敏度為6.64 MHz cm2/ng。

In this study, Sezawa-mode surface acoustic wave (SAW) devices were employed to construct the allergy biosensor. To fabricate Sezawa-mode SAW devices, the RF magnetron sputtering method for the growth of piezoelectric ZnO thin films onto Si3N4/Si is adopted and influences of the sputtering parameters are investigated. The properties of the ZnO thin films are investigated by X-ray diffraction and scanning electron microscopy which reveal a high c-axis-preferred orientation. A back-etched resonator is used in this study. The wet etching of (100)-oriented silicon wafers is used to form a back-side cavity which is used as the sensing area. Low-stress silicon nitride was deposited by low-pressure chemical vapor deposition (LPCVD) as the etching mask for the integrated SAW device. To investigate the sensing characteristics of SAW, gold (Au) layer was initially deposited onto the sensing area of SAW devices as the binding layer in biochemical sensor and the surface of the Au layer was treated with oxygen plasma to enhance the hydrophilic properties of the Au layer. The self assembly monolayers (SAMs) is used to decorate surface of Au layer and the sandwiched enzyme-linked immunosorbent assay is used for detecting the concentration variation of immunoglobulin E (IgE) in human serum. The frequency response is measured using an E5071C network analyzer. The resonance frequency of the Sezawa-mode SAW device is 1.49 GHz. The sensitivities of the Sezawa-mode biosensor is calculated to be 6.64 MHz cm2/ng for human IgE detection.

誌謝 i
摘要 ii
目錄 v
圖目錄 ix
表目錄 xii
第一章 前言 1
1.1 研究背景與動機 1
1.2 表面聲波共振器 3
1.3 研究內容 5
第二章 理論分析 9
2.1 壓電理論 9
2.1.1 壓電效應 10
2.1.2 壓電材料 11
2.2 氧化鋅結構與特性 12
2.3 反應性射頻磁控濺鍍原理 14
2.3.1 輝光放電 14
2.3.2 磁控濺射 16
2.3.3 射頻濺射 17
2.3.4 反應性濺射 17
2.4 薄膜沉積機制 18
2.4.1 薄膜沉積階段 18
2.4.2 薄膜表面與剖面結構 20
2.5 矽基板蝕刻製程 21
2.5.1 非等向性濕式蝕刻 21
2.5.2 乾式蝕刻 24
2.6 表面聲波元件理論與特性 25
2.6.1 表面聲波元件基本設計與特性 25
2.6.2 Rayleigh wave與Sezawa wave 27
2.7 表面聲波元件種類 29
2.7.1 共振型表面聲波元件 29
2.7.2 延遲型表面聲波元件 30
2.8 表面聲波元件參數性質 30
2.8.1 傳播波速 30
2.8.2 插入損失 31
2.8.3 機電耦合係數 32
2.9 質量負載效應 33
2.10 感測度計算 35
2.11 電漿修飾 35
2.11.1 電漿聚合 35
2.11.2 電漿活化 36
2.11.3 電漿誘導接枝共聚合 36
2.12 接觸角量測法 37
2.13 自我組裝單分子膜技術 38
2.13.1 SAMs成膜系統 39
2.13.2 SAMs基本結構 39
2.14 酵素連結免疫吸附法 40
2.14.1 直接型酵素連結免疫吸附法 41
2.14.2 間接型酵素連結免疫吸附法 41
2.14.3 三明治型酵素連結免疫吸附法 41
第三章 實驗 43
3.1 實驗流程 43
3.2 薄膜沉積 45
3.2.1 射頻磁控濺鍍系統 45
3.2.2 直流磁控濺鍍系統 47
3.3 薄膜特性分析 48
3.3.1 X光繞射分析 48
3.3.2 掃描式電子顯微鏡分析 49
3.4 蝕刻製程 49
3.5 表面聲波元件製作流程 49
3.5.1 基板清洗 51
3.5.2 支撐層與壓電層之製作 52
3.5.3 IDTs指叉電極製作 52
3.5.4 蝕刻背部空腔 54
3.6 表面聲波元件網路分析儀量測 54
3.7 生醫感測 55
3.7.1 生醫附著層 55
3.7.2 氧電漿清洗&接觸角量測 56
3.7.3 SAMs法 57
3.7.4 ELISA呈色分析 57
3.7.5 表面聲波元件生醫感測器 58
第四章 結果與討論 59
4.1 氧化鋅薄膜之特性分析 59
4.1.1 濺鍍壓力 59
4.1.2 基板溫度 62
4.2 背部空腔之影響 64
4.3 表面聲波元件之頻率響應 66
4.4 生醫感測 69
4.4.1 Au/Cr生醫附著層 69
4.4.2 接觸角量測 71
4.4.3 ELISA呈色分析 71
4.4.4 頻率響應 73
第五章 結論及未來展望 81
參考文獻 82

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