本研究期望製作具深紫及近紫外光放光之有機發光二極體(OLED)，以及以盤狀液晶分子作為OLED之電洞傳輸層。針對本研究所使用之兩款新穎發光材料，以不同元件結構探討元件電激發光光譜之變化，藉由適當的材料搭配來調整光譜，使其放光符合需求。此元件以高真空蒸鍍的方式製作，依序於ITO基板上鍍上電洞注入／傳輸層、發光層、電子傳輸層、電子注入層以及鋁電極。
以ITO/TCTA/EML/TPBi/LiF/Al結構製備深紫光元件可達最好表現：最大EQE=1.04%，最大亮度=1210 cd/m2。以ITO/MoO3/EML/PBD/LiF/Al結構製備近紫外光元件可達最好表現：最大EQE=1.41%，其放光光譜接近一半之範圍位於紫外光區，且其半高寬為60 nm較文獻中其他紫外光元件窄。
論文第二部分將盤狀液晶半導體以旋轉塗佈的方式作為電洞傳輸層，結構為ITO/DiDPQ10/TAPC/mcP:8 wt% FIrpic/TmPyPB/LiF/Al，與PEDOT:PSS作為電洞傳輸層之元件比較。雖在此結構下之元件的表現較PEDOT:PSS元件差，但其效率滾降表現則較為優異。此外，此材料之最高已佔據能階與本論文所使用之電洞傳輸層較不匹配，相信以其優異的成膜特性及足夠高的電洞傳輸能力在能階較匹配之元件將會有更良好的表現。

This thesis investigates the performance of two deep-purple and near-ultraviolet emitter as the emission layer and a discotic liquid-crystalline semiconductor as the hole injection layer in OLED. All the OLEDs are fabricated by thermal evaporation technique. The effect of device structure on the electroluminescence spectrum is also discussed in this study. The deep-purple emitting device with the configuration of ITO/TCTA/EML/TPBi/LiF/Al shows the best performance: EQEmax=1.04%, and Lmax=1210 cd/m2. The near-ultraviolet emitting device, with the configuration of ITO/MoO3/EML/PBD/LiF/Al has a maximum EQE=1.41%. The half of the emission spectrum locates in the ultraviolet zone, and the half width of the spectrum is much narrower than a conventional UV device.
In the study of utilizing discotic liquid crystalline semiconductor as hole injection/transport layer in OLEDs, the structure is ITO/DiDPQ10/TAPC/mcP:8wt% FIrpic/TmPyPB/LiF/Al. The performance of the DiDPQ10 device is not as good as the PEDOT:PSS device. However, it shows much better efficiency roll-off than the PEDOT:PSS device. Also, the HOMO level of the hole transporting material TAPC is not well aligned with it of DiDPQ10. Therefore, the performance of the modified device configuration using a hole transporting material with a much matched HOMO level would be potentially improved.

論文審定書 i
摘要 ii
Abstract iii
目次 v
圖次 vii
表次 ix
第一章 緒論 1
1.1 前言 1
1.2 有機發光二極體(OLED)的發展 2
1.3 研究動機 4
1.4 各章提要 4
第二章 基礎理論 5
2.1 有機發光二極體(OLED)元件結構發展 5
2.2 有機電激發光(Organic Electroluminescence, OEL)原理 7
2.2.1 電機發光(OEL)原理 7
2.2.2 螢光與磷光發光原理 8
2.2.3 主客發光系統 11
2.3 有機發光二極體(OLED)材料的選擇 13
2.3.1 陽極 13
2.3.2 陰極 13
2.3.3 電洞注入／傳輸層(HIL／HTL)材料 14
2.3.4 電子注入／傳輸層(EIL／ETL)材料 14
2.3.5 主客發光體材料 15
第三章 實驗設備及元件製程 17
3.1 實驗流程 17
3.2 實驗設備介紹 17
3.2.1 超音波震盪機(Ultrasonic Cleaner) 17
3.2.2 純化系統──管式高溫爐(Tube-Furnace) 17
3.2.3 紫外光／可見光光譜儀(UV／Vis spectrophotometer)與螢光光譜儀(fluorimeter) 18
3.2.4 橢圓偏光儀(Ellipsometer) 19
3.2.5 紫外光臭氧清洗機(UV-Ozone) 19
3.2.6 真空熱蒸鍍系統(Vacuum Evaporation Deposition System) 19
3.2.7 手套箱(Glove Box) 20
3.2.8 量測系統 20
3.3 元件製程與量測 21
3.3.1 基板前處理 21
3.3.2 元件蒸鍍 22
3.3.3 元件量測 23
3.4 材料簡介 23
3.5 元件參考結構 26
第四章 結果與討論 28
4.1 C-MesOL元件 28
4.2 C-naOL元件 31
元件結構 31
4.3 DiDPQ10元件 37
4.4 結論 39
參考文獻 40

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