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博碩士論文 etd-0810109-154308 詳細資訊
Title page for etd-0810109-154308
論文名稱
Title
能改善自體加熱效應與浮體效應且自我對齊之具有源/汲極缚點和非連續阻絕氧化層的新穎薄膜電晶體
A Novel Self-aligned TFT with Source/Drain tie and Discontinuous Block Oxide Layer for Suppressing Self-heating Effect and Floating Body Effect
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
91
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2009-06-26
繳交日期
Date of Submission
2009-08-10
關鍵字
Keywords
自體加熱效應、浮體效應
self-heating effect, SOI, Floating body effect
統計
Statistics
本論文已被瀏覽 5725 次,被下載 6167
The thesis/dissertation has been browsed 5725 times, has been downloaded 6167 times.
中文摘要
在本論文中,我們提出一個利用自我對齊之具有源/汲極缚點和非連續阻絕氧化層的新穎薄膜電晶體。元件微縮後製程能力的提升也相形重要,為了避免misalignment問題產生,此新穎元件利用自我對齊製程製作。另外由於具有非連續且不等高的阻絕氧化層,可以利用它來阻絕源/汲極與基體間造成的P-N接面,所以能降低P-N接面造成的寄生電容與漏電流,改善短通道效應,又因為具有兩個額外增加的pass way所以能抑制浮體效應,還可以有效降低通道載子產生的熱能,改善元件的熱不穩定度。另外因為並聯兩個額外增加的pass way電阻,所以可有效減小源/汲極串接電阻、提高驅動電流。根據ISE TCAD 10.0模擬軟體結果得知,非連續且不等高的阻絕氧化層不只可有效改善短通道效應,還可抑制浮體效應與自體加熱效應。
Abstract
In this paper, we propose a novel thin film MOSFET with source/drain tie and discontinuously block oxide layers. Improving process is very important, when the gate length of SOI MOSFET is reduced. To overcome the misalignment problem, we use self-aligned technology to fabricate this device. In addition, the device has discontinuously block oxide layers; they can improve short channel effects, reduce the parasitic capacitance, and decrease the leakage current cause by P-N junction between source/drain and body regions. They also supply two pass ways to eliminate carriers and heat which generated by impact ionization resulting in suppression of floating-body effect and self-heating effect. In addition, these two pass ways can be seen as the parallel equivalent resistance results in a reduced series resistance and an increased drain saturation current. According to the ISE TCAD 10.0 simulation results, the discontinuously block oxide layers can not only improve the short channel effects, but also eliminate the floating-body effect and diminish the self-heating effect because of the pass ways.
目次 Table of Contents
第一章 導論 1
1-1背景 1
1-2動機 2
1-3論文評論 3
第二章 元件設計與製造 10
2-1理想製程流程 11
2-2 實際製程 13
第三章 結果與討論 14
3-1 模擬結果 14
3-1-1 N-type S/D-tie SOI模擬結果與探討 14
3-1-2源/汲極缚點寬度對於短通道效應的影響 30
3-1-3源/汲極下方阻絕層高度對於短通道效應的影響 36
3-1-4 N-type Poly S/D tie SOI模擬結果與探討 41
3-2 N-type S/D-tie SOI實作過程與結果 44
第四章 結論與未來發展 64
4-1 結論 64
4-2 未來發展 64
參考文獻 66
附錄:S/D tie SOI Runcard 70
參考文獻 References
Reference
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