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博碩士論文 etd-0810110-170812 詳細資訊
Title page for etd-0810110-170812
論文名稱
Title
分子束磊晶成長之不同矽摻雜氮化銦薄膜的應變效應研究
Strain effect of silicon doped indium nitride films grown by plasma-assisted molecular beam epitaxy
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
77
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2010-07-09
繳交日期
Date of Submission
2010-08-10
關鍵字
Keywords
應變、不同矽摻雜、分子束磊晶、氮化銦薄膜
indium nitride films, Strain, molecular beam epitaxy, silicon doped
統計
Statistics
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中文摘要
應力效應於不同矽摻雜氮化銦,由於氮化銦成長於氮化鎵之上的有10%的晶格不匹配,以電漿輔助分子束磊晶在c面藍寶石基板上成長氮化家後在成長氮化銦1.4μm,及在氮化銦層摻入不同農度知矽;以X光繞射儀倒晶格圖和拉曼光譜儀分析不同矽摻雜對氮化銦薄膜之應力影響,應力結果將和不同矽摻雜氮化鎵相似
Abstract
The effect of silicon doping on the strain in c-plane InN films grown on c-plane GaN by plasma-assisted molecular beam epitaxy is investigated. Strain is measured by x-ray reciprocal space mapping and Raman spectroscopy. The silicon doping concentration of our sample is about 1018 cm-3 by Hall measurement. Relation between the strain and the silicon concentration is obtained. To understand the increase in tensile stress caused by Si doping is discussed in terms of a crystallite coalescence model.
目次 Table of Contents
圖列
表列
中文摘要………………………………………………………………(8)
Abstract……………………………………………………………….(9)
Chapter 1 序論
1.1薄膜應力……………………………………………………(10)
1.2材料介紹……………………………………………………(13)
1.3倒晶格空間…………………………………………………(15)
1.3.1基本原理……………………………………………...(15)
1.3.2高解析X光繞射儀中的倒晶格圖……………………(23)
Chapter 2 實驗儀器及原理
2.1高解析X光繞射儀…………………………………………(30)
2.1.1 Theta-2theta掃描模式……………………………......(33)
2.1.2 Rocking curve掃描模式……………………………...(34)
2.2倒晶格空間圖……………………………………………….(37)
2.3霍爾量測……………………………………………………..(42)
2.4拉曼光譜儀…………………………………………………..(45)
Chapter 3 結果與討論
3.1 Hall量測結果………………………………………………..(48)
3.2 Rocking curve掃描結果……………………………………..(50)
3.3 Theta-2theta掃描結果………………………………………(53)
3.4倒晶格空間圖結果…………………………………………(56)
3.5晶體的體積結果…………………………………………….(65)
3.6拉曼光譜的結果…………………………………………….(66)
3.7應力(stress)計算……………………………………….…….(68)
Chapter 4 結論……………………………………………………….(71)
參考文獻……………………………………………………………...(73)
參考文獻 References
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[2] K .Osamura, S. Nara and Y. Murakmi, "Preparation and optical properties of Ga[sub 1-x]In[sub x]N thin film", Journal of Applied Physics, Vol.46, p.3432~3437(1975).

[3] H.J. Hovel and J.J. Cuomo, "Electrical and Optical Properties of rf-Sputtered GaN and InN", Applied Physics Letter, Vol.20, p.71~73(1972).

[4] K.L. Westra, R. P. W. Lawson and M. J, Brett, "The effects of oxygen contamination on the properties of reactively sputtered indium nitride films", Journal of Vacuum Science and Technology A, Vol.6, p.1730~1732(1998).

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[6] T.L. Tansley and C. P. Foley, "Optical band gap of indium nitride", Journal of Applied Physics, Vol.59, p.3241~3244(1986).

[7] V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, F. Bechstedt, A.V. Mudryi, E. E. Halle, "Absorption and Emission of Hexagonal InN", Evidence of Narrow Fundamental Band Gap, Physica Status Solidi, B Vol.229, No.3, p.R1~R3(2002).

[8] K. Osamura, K. Nakajima, and Y. Murakami, "Fundamental absorption edge in GaN, InN and their alloys", Solid state Commum, Vol.11, p617~621(1972).

[9] T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, E. Kurimoto, "Optical bandgap of wurtzite InN", Applied Physics Letter, Vol.81, p.1246~1248(2002).

[10] J. Wu, W. Waluchiewicz, K.M Yu, J.W. Ager III, E.E. Heller,H. Lu, W.J. Schaff, Y. Saito, Y. Nanishi, "Unusual properties of the fundamental band gap of InN", Applied Physics Letter, Vol.80, p.3967~3969(2002).

[11] Y. Saito, H. Harima, E. Kurimoto, T. Yamaguchi, N. Teraguchi, A. Suzki, "Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE ", Physica Status Solidi b, Vol.234, No.3, p.796~800(2002).

[12] S. Nakamura, M. Amano, N. Koide, M. Senoh, and T. Mukai, "P-GaN / N-InGaN / N-GaN Double-heterostructure Blue-light-emitting Diodes", Japanese Journal of Applied Physics, Part 2, Vol.32, p.L8~L11(1993).

[13] V. W. L. chin, T. L. Tansiey, and T. Osotchan, "Electron mobllities in gallium, Indium, atid aluminum nitride ", Journal of Applied Physics, Vol.75, p.7365~7372(1994).

[14] Charles Kittel, "Introduction to Solid State Physics", 8th EDITION, p.25.

[15] B.D Cullity and S.R. stock, "Element Of X-Ray Diffraction", THIRD EDTTION.

[16] Jens Birch, Fredrik Eriksson, Lecture 9 : "High Resolution XRD and Reciprocal Space Mapping".

[17] Ullrich Pietsch, Vaclav Holy, Tilo Baumbach, "High-Resoolution X-Ray Scattering", Second Edition, p.48.

[18] 杜毅洲, "Raman study of LO phono-plasmon coupled modes dependence on carrier density in Si:InN films", 國立中山大學 碩士論文, p.38(2009).

[19] Charles Kittel, "Introduction to Solid State Physics", 8th EDITION.

[20] V. Yu. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, and M. A. Jacobson, "Raman and photoluminescence studies of biaxial strain in GaN epitaxial", Journal of Applied Physics, Vol.82, p.5097~5102(1997).

[21] Xinqiang Wang, Soong-Bek Che, Yoshihiro Ishitani, and Akihiko Yoshikawa, "Experimental determination of strain-free Raman frequencies and deformation potentials for the E2 high and A1(LO) modes in hexagonal InN", Applied Physics Letters, Vol.89, p.171907-1~3(2006).

[22] L. T. Romanoa, C. G. Van de Walle, J. W. Ager III, W. Go‥ tz and R. S. Kern, "Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition", Journal of Applied Physics, Vol.81, Number 11, p.7745~7752(2000).

[23] In-Hwan Lee, In-Hoon Choi, Cheul-Ro Lee, Eun-joo Shin, Dongho Kim, Sam Kyu Noh, Sung-Jin Son, Ki Yong Lim, and Hyung Jae Lee, "Stress relaxation in Si-doped GaN studied by Raman spectroscopy", Journal of Applied Physics, Vol.83, Number 11, p.5787~5791(1998).
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