本研究探討電鍍液、電鍍參數和原始基板粗糙度對鎳在多晶銅基板上的磊晶成長的影響。鍍層主要是以X光繞射分析鍍層的集合組織，以原子力顯微鏡分析基板與鍍層表面形貌與粗糙度，以掃描式電子顯微鏡和電子背向散射繞射分析表面形貌與結晶方位。實驗結果顯示，不論鍍液種類與電鍍參數如何改變，電鍍時均以<001>//ND 結晶方位的晶粒上最容易磊晶成長，且維持較低的表面粗糙度。而<101>//ND和<111>//ND方位的晶粒表面則隨鍍層厚度增加而迅速粗化，同時也伴隨磊晶關係的喪失。在電解拋光之後，<100>//ND和<111>//ND方位的晶粒均有很低的表面粗糙度，但是仍然只有<001>//ND的晶粒上容易磊晶成長。從SEM影像可觀察到晶粒表面有許多三角錐狀結構，而三角錐狀結構側邊平面皆是{100}面，故可知磊晶成長的晶癖面為(100)面。

This study aimed at clarifying the effects of electroplating parameters, such as the electrolyte and pH value, and substrate roughness on the epitaxial growth of Ni on polycrystalline Cu substrates. The deposits were characterized by actomic force microscopy, scanning electron microscopy/electron backscatter diffraction and X-ray diffraction. Results indicated that no matter what texture was developed on the subsequent deposition, which was affected by the electroplating parameters, the epilayer grown on the (100) grains exhibited the greatest thickness and the lowest roughness value. Though both (111) and (100) Cu grains possessed a smooth surface after electro-polishing, the epitaxial growth on the (1111) Cu grains were clearly prohibited. Finally, the pyramid structures observed showed that the habit planes of the growth front are {100} instead of the close packed {111} planes.

總目錄
論文審定書……………………………………………………………...……...i
摘要……………………………………………………………………...….….ii
Abstract…………...………………………………………………………..….iii
總目錄…………………………………………………………………….…...iv
表目錄... ………………………………………………………………….…..viii
圖目錄……………………………………………………………...…….......ix
第一章 緒論……………………………………………………………...1
第二章 基礎理論與文獻回顧……………………………………………3
2.1磊晶成長………………………………………………………….…...3
2.1.1磊晶成長…………………………………………………………….3
2.1.2磊晶成長的熱力學………………………………………………….4
2.1.3薄膜的沉積過程與成長……………………………………....……5
2.2電鍍原理……………………………………………………..……….7
2.2.1電位………………………………………………………......…….7
2.2.2過電位……………………………………………………...……….7
2.2.3塔弗方程式 ………………………………………………………….8
2.2.4法拉第定律………………………………………………………….8
2.2.5電鍍參數…………………………………………………………….9
2.2.6 極化曲線…………………………………………………………….9
2.3多晶基板上的電鍍磊晶成長與集合組織……………………………10
2.3.1電鍍參數對鍍層顯微組織與集合組織的影響……………………10
2.3.1.1過電位對晶粒成長結構之影響………………………..........…10
2.3.1.2電流密度…………………………………………………………12
2.3.1.3 pH值……………………………………………………….....…13
2.3.1.4溫度…………………………………………………….......……14
2.3.1.5鍍液成分…………………………………………………………14
2.3.1.6添加物………………………………………………...…………15
2.3.2電鍍參數對磊晶成長的影響…………………………….…..……17
2.3.2.1鍍液成分與電流密度………………………………...…………17
2.3.2.2基板顯微組織………………………………………...…………19
2.4背向散射電子繞射原理及共位晶格晶界…………………….....…21
2.4.1電子背向散射繞射(EBSD)簡介………………………….....…..21
2.4.2背向散射電子繞射原理…………………………………….....…21
2.4.3共位晶格晶界…………………………………………….....……22
2.5晶體集合組織之分析……………………………………….....…...23
2.5.1尤拉角 (Euler Angle)…………………………………….....……24
2.5.2反極圖 (Inverse Pole Figure) ………………………….....……..24
第三章 實驗方法……………………………………………….......…25
3.1退火與表面處理…………………………………………........……25
3.2電鍍製程…………………………………………………...…....…26
3.3掃描式電子顯微鏡分析………………………………….......……27
3.3.1 SEM 表面觀察……………………………………........………27
3.3.2背向散射電子繞射分析………………………………….......…27
3.4 X光繞射分析…………………………………………….......……28
3.5原子力顯微鏡分析…………………………………………......…28
3.6恆電位分析儀…………………………………………......………29
第四章 實驗結果………………………………………….....………30
4.1電解拋光後之基板表面分析……………………………......……30
4.2 X光繞射(XRD)分析…………………………………….......……31
4.3極化曲線…………………………………………………......……33
4.4氨基磺酸鎳鍍液中，<001>、<101>、<111>方位之比較........34
4.4.1 EBSD鍍層的分析…………………………………………......34
4.4.1.1 NH-A(100)…………………………………………….......…34
4.4.1.2 NH-B(5)……………………………………………….......…35
4.4.1.3 NH-C(5)……………………………………………….......…35
4.4.2 SEM表面形貌觀察及AFM之粗糙度分析……………….......36
4.4.2.1 NH-A(100)……………………………………………….......36
4.4.2.2 NH-B(5)……………………………………………….......…37
4.4.2.3 NH-C(5)……………………………………………….......…38
4.4.3 EBSD之cross section分析……………………………......…39
4.5硫酸鎳鎳鍍液中，<001>、<101>、<111>方位之比較…….....40
4.5.1 EBSD鍍層的分析……………………………………………...40
4.5.1.1 NS(15)………………………………………………………..40
4.5.1.2 NS(100)……………………………………………………...40
4.5.2 SEM表面形貌觀察及AFM之粗糙度分析…………………...41
4.5.2.1 NS(15)……………………………………………………....41
4.5.2.2 NS(100) …………………………………………………….41
第五章 討論……………………………………………………......42
5.1 電鍍參數對鍍層集合組織的影響……………………………..42
5.2鎳鍍層之集合組織………………………………………………42
5.3電鍍參數對磊晶成長的影響……………………………………43
5.4粗糙度與方位的關係及其對磊晶成長的影響…………………43
第六章 結論………………………………………………………...45
第七章 參考文獻……………………………………………………46

[1] J. Amblard, I. Epelboin, M. Froment, G. Maurin, “Inhibition and nickel electrocrystallization”, J. Appl. Electrochem., 9, (1979), 233-242.
[2] F. Yang, W. Tian, H. Nakano, H. Tsuji, S. Oue, H. Fukushima, “Effect of current density and organic additives on the texture and hardness of Ni electrodeposited from sulfamate and Watt’s solutions”, Mater. Trans., 51, (2010) , 948-956.
[3] C.S. Lin, K.C. Peng, P.C. Hsu, L. Chang, C.H. Chen, “Effect of bath temperature on microstructure of sulfamate nickel electrodeposits”, Mater Trans JIM., 41, (2000), 777-782.
[4] G.I. Finch, A.L. Williams, “The structure of electrodeposited nickel”, Trans. Faraday Soc., 33, (1937), 564-569.
[5] H.J. Pick, G.G. Storey, T.B. Vaughan, “The structure of electrodeposited copper─I ”,Electrochimica Acta, 2, (1960), 165-178.
[6] 黃彥親，鎳在多晶銅及黃銅基板上電鍍磊晶成長的研究，國立中山大學材料與光電科學學系碩士論文，(2013)。
[7] T. Uemura, T.F.M. Chang, A. Shibata, M. Sone, “Abnormally large Ni grains epitaxially grown by electrodeposition on Cu substrate”, Thin Solid Films, 529, (2013), 385-388.
[8] L. Wang, P. Fricoteaux, K.Y. Zhang, M. Troyon, P. Bonhomme, J. Douglade, A. Metrot, “Growth mechanism and structure of electrodeposited Cu/Ni multilayers”, Thin Solid Films, 261, (1995), 160-167.
[9] A. Shibata, H. Noda, M. Sone, Y. Higo, “Microstructural development of an electrodeposited Ni layer”, Thin Solid Films, 518, (2010), 5153-5158.
[10] 劉映辰，鎳在多晶銅基板的電鍍磊晶成長研究，國立中山大學材料與光電科學學系碩士論文，(2011)。
[11] R. Winand, “Electrodeposition of metals and alloys—new results and perspectives”, Electrochim. Acta., 39, (1994), 1091–1105.
[12] N. Kanani, “Electroplating : basic principles, processes and practice”, 1st ed., Amsterdam, Elsevier Science Ltd, (2005).
[13] H. Fischer, “Electrocrystallization of metals under ideal and real conditions”, Angew. Chem., 8, (1969), 116–119.
[14] J.E. Ayers, “Heteroepitaxy of semiconductors : theory, growth, and characterization”, 1st ed., Boca Raton, CRC press, (2006).
[15] D.A. Porter, K.E. Easterling, M.Y. Sherif, “Phase transformations in metals and alloys”, 3rd ed., Boca Raton, CRC Press, (2009).
[16] K.N. Tu, J.W. Mayer, L.C. Feldman, “Electronic thin film science for electrical engineers and materials scientists”, 1st ed., London, Macmillan, (1992).
[17] D. Holec, “Multi-scale modelling of III-nitrides: from dislocations to the electronic structure”, Philosophy at the University of Cambridge, (2008).
[18] 田民波，薄膜技術與薄膜材料，台中市: 五南圖書出版股份有限公司，(2007)，第 144-611 頁。
[19] J. Koryta, J. Dvořák, and L. Kavan, “Principles of electrochemistry”, 2nd ed., Hoboken, Wiley, (1993).
[20] J. Bockris, D.M. Drazic, “Electro-chemical science”, 1st ed., London, Taylor and Francis, (1972) .
[21] D.R. Crow, “Principles and applications of electrochemistry”, 3rd ed., London, Chapman and Hall, (1988).
[22] 黃宏勝、林麗娟，FE-SEM/CL/EBSD分析技術簡介，工業材料雜誌201期，(2003)，第 99-108 頁。
[23] R. Abbaschian, Lara. Abbaschian, R.E.R. Hill, “Physical metallurgy principles”, 4th ed., Stamford, Cengage Learning, (2009), 187-193.
[24] H.R. Wenk, “Preferred orientation in deformed metals and rocks: An introduction to modern texture analysis”, 1st ed., Waltham, Academic Press, (1985).
[25] V. Randle, O. Engler, “Introduction to texture analysis”, 1st ed., London, CRC press, (2000).