本論文使用摻鈦藍寶石雷射(Ti：sapphire)與單光子計數系統(TCSPC)對生長在錐狀的氮化鎵GaN microdisk上之氮化銦鎵InGaN進行光激發螢光光譜(PL)與時間解析螢光光譜(TRPL)的量測，探討在改變溫度、不同雷射(269nm、404nm)激發樣品之光學特性。變溫光激發螢光光譜(PL)中發現，InGaN特徵訊號會隨著溫度慢慢升高，而有先紅移在藍移最後在紅移的情況發生，再經由文獻探討其他訊號的產生方式。在時間解析螢光光譜(TRPL)的部分，發現隨著溫度變高生命週期有減低的趨勢，接著透過內部量子效率與生命週期關係式可計算載子的輻射發光複合週期與非輻射發光複合生命週期。

We use a Ti:sapphire femtosecond laser and a Time Correlated Single Photon Counting (TCSPC) system to study optical properties and carrier relaxation of InGaN grown on GaN microdisk by plasma-assisted molecular-beam epitaxy .
Variable-temperature photoluminescence (PL) was found, InGaN feature signals gradually increased with temperature, while the redshift in the first and then blueshift final at redshift happens, then through the literature to explore ways to explain other signals. In the time-resolved photoluminescence (TRPL) part, found that as the temperature becomes higher and then lifetime becomes decrease, and then calculate the internal quantum efficiency and lifetime to get radiation recombination and non-radiation recombination.

目錄
致謝 ii
摘要 iii
Abstract iv
目錄 v
圖目錄 vi
第一章 導論 1
1.1 前言 1
1.2 發光二極體的量子井結構 InGaN/GaN 1
1.3 相關文獻探討 2
第二章 基本原理介紹 5
2.1 光致螢光光譜(PL)與時間解析螢光光譜(TRPL) 5
2.2 導電帶載子非復合之能量釋放 6
2.3 電子與電洞復合之釋放能量方式 7
第三章 實驗原理與光路架設 10
3.1 Mai Tai Laser 10
3.2 TP-200B Tripler原理 10
3.3 TCSPC系統簡介 13
3.4 實驗光路架設 18
第四章 實驗結果與討論 19
4.1 樣品介紹 19
4.1.1 InGaN quantum well 19
4.2 光致螢光光譜分析 20
4.2.1 變溫光致螢光光譜 20
4.3 時間解析螢光光譜分析 27
4.3.1 269nm雷射之時間解析螢光光譜 27
第五章 結論 60
Reference 61

D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S.
Barnard, M. J. Kappers, C. J. Humphreys, and E. J. Thrush, “Optical and
microstructural studies of In Ga N Ga N single-quantum-well structures“, Appl.
Phys. Lett. 97, 103508 (2005).
S. Albert, A. Bengoechea-Encabo, P. Lefebvre, F. Barbagini, M. A. Sanchez-
Garcia, E. Calleja, U. Jahn, and A. Trampert, “Selective area growth and
characterization of InGaN nano-disks implemented in GaN nanocolumns with
different top morphologies“, Appl. Phys. Lett. 100, 231906 (2012).
D. Simeonov, E. Feltin, H.-J. Bühlmann, T. Zhu, A. Castiglia, M. Mosca, J.-F.
Carlin, R. Butté, and N. Grandjean, “Blue lasing at room temperature in high
quality factor Ga N Al In N microdisks with InGaN quantum wells“, Appl. Phys.
Lett. 90, 061106 (2007).
Meng Zhang, Pallab Bhattacharya, and Wei Guo, “InGaN/GaN self-organized
quantum dot green light emitting diodes with reduced efficiency droop”, Appl.
Phys. Lett. 97, 011103 (2010).
Rachel A. Oliver, G. Andrew D. Briggs, Menno J. Kappers, Colin J. Humphreys,
Shazia Yasin, James H. Rice, Jonathon D Smith, and Robert A. Taylor, “InGaN
quantum dots grown by metalorganic vapor phase epitaxy employing a postgrowth
nitrogen anneal”, Appl. Phys. Lett. 83, 755 (2003).
Wei Guo, Animesh Banerjee, Pallab Bhattacharya, and Boon S. Ooi, “InGaN/GaN
disk-in-nanowire white light emitting diodes on (001) silicon”, Appl. Phys. Lett.
98, 193102 (2011).
Ansgar Laubsch, Matthias Sabathil, Werner Bergbauer, Martin Strassburg,
Hans Lugauer, Matthias Peter, Stephan Lutgen, Norbert Linder, Klaus Streubel,
Jorg Hader, Jerome V. Moloney, Bernhard Pasenow, and Stephan W. Koch, “On
the origin of IQE-’droop’ in InGaN LEDs”, Phys.Status Solidi C 6, No.S2, S913
(2009).
M. Binder, A. Nirschl, R. Zeisel, T. Hager, H.-J. Lugauer, M. Sabathil, D.
Bougeard, J. Wagner, and B. Galler, “Identification of nnp and npp Auger
recombination as significant contributor to the efficiency droop in (GaIn)N
quantum wells by visualization of hot carriers in photoluminescence”, Appl. Phys.
Lett. 103, 071108 (2013).
James W. Robinson, James H. Rice, Anas Jarjour, Jonathan D. Smith, Robert A.
Taylor, Rachel A. Oliver, G. Andrew D. Briggs, Menno J. Kappers, Colin J.
Humphreys, and Yasuhiko Arakawa, “Time-resolved dynamics in single InGaN
quantum dots”, Appl. Phys. Lett. 83, 2674 (2003).
Cheng-Yen Chen, Dong-Ming Yeh, Yen-Cheng Lu, and C. C. Yang, “Dependence
of resonant coupling between surface plasmons and an InGaN quantum well on
metallic structure”, Appl. Phys. Lett. 89, 203113 (2006).
R Armitage and K Tsubaki, “Multicolour luminescence from InGaN quantum wells
grown over GaN nanowire arrays by molecular-beam epitaxy”, Nanotechnology 21,
195202 (2010).
Wei Guo, Meng Zhang, Animesh Banerjee, and Pallab Bhattacharya*, “Catalyst-
Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by
Molecular Beam Epitaxy”, NanoLett. 10, 3355 (2010).
S. Nakamura, T. Mukai, M. Senoh, N. Iwasa, “Thermal annealing effects on p-type
Mg-doped GaN films”, Jpn. J. Appl. Phys. 31, L139 (1992).
P.Waltereit, O.Brandt, A.Trampert, H.T.Grahn, J.Menniger, M.Ramsteiner,
M.Reiche & K.H.Ploog, “Nitride semiconductors free of electrostatic fields for
efficient white light-emitting diodes”, Nautre 406, 865 (2000) .
H. Morkoc and U. Ozgur, “Zinc Oxide: Fundamentals, Materials and Device
Technology”, Wiley 131, (2008).
P. F. Curley, A. I. Ferguson, J. G. White, W. B. Amos,"Application of a
femtosecond self-sustaining mode-locked Ti:sapphire laser to the field of laser
scanning confocal microscopy", Opt. and Quan. Elec. 24, 851 (1992)
Photop Technologies, “TP-2000B fs and ps Tripler Operation Manual” U-Oplaz
Technologies 1, (2002).
K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B.
E.Gnade,”Mechanisms behind green photoluminescence in ZnO phosphor powders”,
J.Appl.Phys. 79, 7983 (1996).
B. Lin, Z. Fu, and Y. Jia, “Green luminescent center in undoped zinc oxide films
deposited on silicon substrates”, Appl. Phys. Lett. 79, 943 (2001).
R. Krahl, A. Bulter, F. Koberling, “Performance of the Micro Photon Devices PDM
50CT SPAD detector with PicoQuant TCSPC systems”, PicoQuant GmbH 1,
(2005).
K. Domen, K. Horino, A. Kuramata, and T. Tanahashi, “Analysis of polarization
anisotropy along the c axis in the photoluminescence of wurtzite GaN”, Appl. Phys.
Lett. 71, 1996 (1997).
曾彥智, “M-Plane GaN 時間解析螢光光譜特性之研究”, 國立高雄師範大學物
理學系研究所碩士論文 (2012).
Yu-Chi Hsu, Ikai Lo, Cheng-Hung Shih, Wen-Yuan Pang, Chia-Hsuan Hu,
“InGaN/GaN single-quantum-well microdisks”, Appl. Phys. Lett. 100, 242101
(2012).
Wei Guo, Meng Zhang, Animesh Banerjee, and Pallab Bhattacharya*, “Catalyst-
Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by
Molecular Beam Epitaxy”, NanoLett. 10, 3355 (2010).
B. B. Kosicki, R. J. Powell, and J. C. Burgiel, ”Optical absorption and vacuum-
ultraviolet reflectance of GaN thin film”, Phys. Rev. Lett. 24, 25 (1970).
Th Kehagias, G P Dimitrakopulos, P Becker, J Kioseoglou, F Furtmayr, T
Koukoula, I H¨ausler, A Chernikov, S Chatterjee, Th Karakostas, H-M
Solowan, U T Schwarz, M Eickhoff and Ph Komninou, “Nanostructure and
strain in InGaN/GaN superlattices grown in GaN nanowires “, Nanotechnology 24,
435702 (2013).
Nikolai Faleev, Balakrishnam Jampana, Omkar Jani, Hongbo Yu, Robert Opila,
Ian Ferguson, and Christiana Honsberg, “Correlation of crystalline defects with
photoluminescence of InGaN layers”, Appl. Phys. Lett. 100, 242101 (2012).
R Armitage and K Tsubaki, “Multicolour luminescence from InGaN quantum wells
grown over GaN nanowire arrays by molecular-beam epitaxy”, Nanotechnology 21,
195202 (2010).
Yong-Ho Ra, Rangaswamy Navamathavan, San Kang and Cheul-Ro
Lee*,“Different characteristics of InGaN/GaN multiple quantum well
heterostructures grown on m- and r-planes of a single n-GaN nanowire using
metalorganic chemical vapor deposition “, J. Mater. Chem. C 2, 2692 (2014).
E. F. Schubert, ”Light Emitting Diodes”, Cambridge 86, (2003).
Horng-Chang Liu, Chia-He Hsu, Wu-Ching Chou, Wei-Kuo Chen, and Wen-Hao
Chang, ”Recombination lifetimes in InN films studied by time-resolved excitation
correlation spectroscopy”, Phys. Rev. B 80, 193203 (2009).