論文使用權限 Thesis access permission:自定論文開放時間 user define
開放時間 Available:
校內 Campus:永不公開 not available
校外 Off-campus:永不公開 not available
論文名稱 Title |
利用時變兆赫波研究不具極性氧化鋅之光學特性 Study of optical properties of non-polar ZnO using Terahertz time domain spectroscopy |
||
系所名稱 Department |
|||
畢業學年期 Year, semester |
語文別 Language |
||
學位類別 Degree |
頁數 Number of pages |
65 |
|
研究生 Author |
|||
指導教授 Advisor |
|||
召集委員 Convenor |
|||
口試委員 Advisory Committee |
|||
口試日期 Date of Exam |
2014-07-31 |
繳交日期 Date of Submission |
2014-09-11 |
關鍵字 Keywords |
兆赫時域、退火、德魯德模型、電導率、折射率 THz-TDS, annealing, Drude model, conductivity, refractive index |
||
統計 Statistics |
本論文已被瀏覽 5739 次,被下載 0 次 The thesis/dissertation has been browsed 5739 times, has been downloaded 0 times. |
中文摘要 |
在本論文中我們利用兆赫波入射到成長於m平面氧化鋅,我們的研究包括不具極性的a軸及c軸氧化鋅在熱退火前後期不同頻率的光學特性,我們研究出來在兆赫波下m平面氧化鋅的折射率與消光係數,利用兆赫波的時域光譜量測出來載子濃度和遷移率跟Drude 模型是相互吻合的,我們也發現m平面氧化鋅在經過退火前後有很大的光學特性變化,在這次的研究中我們觀測到氧化鋅在經過熱退火處理以後其載子濃度和遷移率會大於未經過熱退火處理。 |
Abstract |
In this thesis we have performed detailed study on THz transmission through m-plane ZnO on m-plane sapphire substrate. We have studied the frequency dependent optical properties for annealed and unannealed non polar ZnO for a- and c-axis. The refractive indices and extinction coefficients of m-plane ZnO at THz range are reported. The carrier concentration and mobility determined using THz-TDS method show good agreement with simple Drude model. For annealed and unannealed m-plane ZnO we observed a significant difference for all the above mentioned optical properties. It is found that, for annealed ZnO, carrier concentration and mobility is larger than that of the unannealed ZnO. |
目次 Table of Contents |
論文審定書 Acknowledgements i 摘要 ii Abstract iii Contents iv Table of Figures v List of Tables viii Chapter 1 Introduction 1 1.1 THz radiation 1 1.2 Generation of THz 3 1.3 Zinc oxide (ZnO): introduction 5 1.4 THz Research 7 1.5 Importance of m-plane ZnO 10 Chapter 2 Generation of terahertz pulses from biased photo conductive antenna 10 2.1 PC Emitter and it’s theoretical explanation 12 2.2 Lock-in amplifier 19 Chapter 3 Experimental Setup and Calculation 21 3.1 Theoretical Explanation 21 3.2 Experimental Set-up 24 Chapter 4 Sample information and Data analysis 27 4.1 Sample information 27 4.2 Data analysis 30 Chapter 5 Conclusion 51 References 53 |
參考文獻 References |
[1] S. Yang, B. Lin, C. Kuo, H. Hsu, W.-R. Liu, M. Eriksson, et al., "Improvement of Crystalline and Photoluminescence of Atomic Layer Deposited m-Plane ZnO Epitaxial Films by Annealing Treatment," Crystal Growth & Design, vol. 12, p. 4745, 2012. [2] Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. Reshchikov, S. Doğan, et al., "A comprehensive review of ZnO materials and devices," Journal of Applied Physics, vol. 98, p. 041301, 2005. [3] A. K. Azad, J. Han, and W. Zhang, "Terahertz dielectric properties of high-resistivity single-crystal ZnO," Applied Physics Letters, vol. 88, p. 021103, 2006. [4] H. Guo, X. Zhang, W. Liu, A. Yong, and S. Tang, "Terahertz carrier dynamics and dielectric properties of GaN epilayers with different carrier concentrations," Journal of Applied Physics, vol. 106, p. 063104, 2009. [5] M. Tonouchi, "Cutting-edge terahertz technology," Nature Photonics, vol. 1, p. 97, 2007. [6] Y.-S. Lee, Principles of Terahertz Science and Technology: Proceedings of the International Conference, Held in Mainz, Germany, June 5-9, 1979 vol. 170, Springer, 2009. [7] H. C. B. Skjeie, "Terahertz Time-Domain Spectroscopy,"Norwegian University of Science and Technology, 2012. [8] S. L. Dexheimer, Terahertz spectroscopy: principles and applications: Chemical Rubber Company Press, 2007. [9] X.-C. Zhang and J. Xu, Introduction to THz wave photonics: Springer, 2010. [10] D. Bagnall, Y. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, et al., "Optically pumped lasing of ZnO at room temperature," Applied Physics Letters, vol. 70, p. 2230, 1997. [11] T. Makino, Y. Segawa, M. Kawasaki, and H. Koinuma, "Optical properties of excitons in ZnO-based quantum well heterostructures," Semiconductor Science and Technology, vol. 20, p. S78, 2005. [12] T. Mandal, "Terahertz Spectroscopy of vanadium dioxide films grown on a-plane sapphire substrate," Texas Tech University, 2013. [13] L. Duvillaret, F. Garet, and J.-L. Coutaz, "A reliable method for extraction of material parameters in terahertz time-domain spectroscopy," Selected Topics in Quantum Electronics, Institute Electrical and Electronics Engineerings Journal of, vol. 2, p. 739, 1996. [14] W. Zhang, A. K. Azad, and D. Grischkowsky, "Terahertz studies of carrier dynamics and dielectric response of n-type, freestanding epitaxial GaN," Applied Physics Letters, vol. 82, p. 2841, 2003. [15] T. Nagashima, K. Takata, S. Nashima, H. Harima, and M. Hangyo, "Measurement of electrical properties of gan thin films using terahertz-time domain spectroscopy," Japanese Journal of Applied Physics, vol. 44, p. 926, 2005. [16] T.-R. Tsai, S.-J. Chen, C.-F. Chang, S.-H. Hsu, T.-Y. Lin, and C.-C. Chi, "Terahertz response of GaN thin films," Optics Express, vol. 14, p. 4898, 2006. [17] Z. Zhou, A. T. Chen, L. S. Feng, X. J. Xin, and C. X. Yu, "Terahertz generation and detection setup based on pump‐probe scheme," Microwave and Optical Technology Letters, vol. 51, p. 1617, 2009. [18] A. Gauthier-Brun, J. Teng, E. Dogheche, W. Liu, A. Gokarna, M. Tonouchi, et al., "Properties of InxGa1− xN films in terahertz range," Applied Physics Letters, vol. 100, p. 071913, 2012. [19] K. Willis, S. Hagness, and I. Knezevic, "A generalized Drude model for doped silicon at terahertz frequencies derived from microscopic transport simulation," Applied Physics Letters, vol. 102, p. 122113, 2013. [20] B. Lin, W.-R. Liu, C. Lin, S. Hsu, S. Yang, C. Kuo, et al., "Single domain m-plane ZnO grown on m-plane sapphire by radio frequency magnetron sputtering," Applied Materials & Interfaces, vol. 4, p. 5333, 2012. [21] C.-L. Lin, "Study of optical Properties of nonpolar GaN using terahertz time domain spectroscopy,", National Sun Yat-sen University, 2013. [22] W. Moore, J. Freitas Jr, and R. Molnar, "Zeeman spectroscopy of shallow donors in GaN," Physical Review B, vol. 56, p. 12073, 1997. [23] A. Barker Jr and M. Ilegems, "Infrared lattice vibrations and free-electron dispersion in GaN," Physical Review B, vol. 7, p. 743, 1973. [24] X. Xin, H. Altan, A. Saint, D. Matten, and R. Alfano, "Terahertz absorption spectrum of para and ortho water vapors at different humidities at room temperature," Journal of Applied Physics, vol. 100, p. 094905, 2006. [25] A. Janotti and C. G. Van de Walle, "Fundamentals of zinc oxide as a semiconductor," Reports on Progress in Physics, vol. 72, p. 126501, 2009. [26] J. B. Baxter and C. A. Schmuttenmaer, "Conductivity of ZnO nanowires, nanoparticles, and thin films using time-resolved terahertz spectroscopy," The Journal of Physical Chemistry B, vol. 110, p. 25229, 2006. [27] J.-M. Flaud, C. Camy-Peyret, and R. A. Toth, International Tables of Selected Constants (Pergamon, Oxford, 1987). |
電子全文 Fulltext |
本電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。 論文使用權限 Thesis access permission:自定論文開放時間 user define 開放時間 Available: 校內 Campus:永不公開 not available 校外 Off-campus:永不公開 not available 您的 IP(校外) 位址是 18.207.98.249 論文開放下載的時間是 校外不公開 Your IP address is 18.207.98.249 This thesis will be available to you on Indicate off-campus access is not available. |
紙本論文 Printed copies |
紙本論文的公開資訊在102學年度以後相對較為完整。如果需要查詢101學年度以前的紙本論文公開資訊,請聯繫圖資處紙本論文服務櫃台。如有不便之處敬請見諒。 開放時間 available 永不公開 not available |
QR Code |