本論文研究由 p-Si / i-AlOx / c-ZnO 結構製成的 pin 二極體，在入射光波長為1064 nm及透過二次諧波調制為波長532 nm的高功率Nd：YAG雷射以不同的強度照射下的光電反應。由濺射法在矽基板上所製造出來的n型氧化鋅薄膜是一種沿c面成長，但面上無特定晶序的織構(textured)結構。此二極體呈現較大的漏電流，估計是透過織構氧化鋅柱間邊界的路徑傳導所致。如忽略此漏電流的特性，所顯示的是反向二極體行為，在一外加電場下，無論二極體是否有照光，其載子會躍過氧化製鋁絕緣層 (i-layer) 界面，從一側隧穿至另一側半導體層，形成隧穿二極體傳導的特性。從二極體量測出的複雜電性曲線中可以分析出其存有大量的缺陷，因無能帶重疊所致隧穿禁止的電壓區，也呈現了組成二極體的兩種不同半導體的能隙、雜質能階分佈等基本性質，也由ⅠⅤ曲線嘗試推斷如異質結構的能障高度及費米能階的位置所在等特性，且針對不同雷射光照射下的電性曲線，也做定量分析，以取得光電傳導相關的材料性質。此外，為了瞭解降低二極體中所含有的固有缺陷可能的效應，以不同溫度對二極體做高溫退火處理，其後發現原本的反向二極體特性會消失，即便其中仍存有微小的漏電流，太致而言，其基本電性已被平常的二極體或 pin 二極體所取代。退火後，樣品的光伏響應班常微弱，借助於所提出的電路模型，最後試著解析丶探討了所觀察到的光電導行為和製程之間的相關性。

In this thesis work, pin-diodes made of p-Si/AlOx/c-ZnO were investigated in regards to their photo-responses to high-power Nd:YAG laser of wavelength = 1064nm and that at 532nm via second-harmonic generation, both operated at various optical power levels. The diodes exhibit large leakage current as they were made, suspected to be a combined result of domain-boundary conduction paths within ZnO, as they are a layer of thin films textured along the c-axis in general, followed by tunneling of carriers across the insulating AlOx layer. Such as-fabricated diodes, characteristic leakage disregarded, demonstrated backward-diode behaviors, essentially a manifestation of a tunneling diode in which the carriers tunnel from one side to the other under an external electric field, whether illuminated or not. The sophisticated IV curves are analyzed as related to the abundant defect-related gap states that obscure the expected forbidden voltage regions of tunneling that are characteristic of the energy gaps of the two constituent semiconductors. Attempts were made to infer the basic semiconductor properties, such as the associated hetero-junction heights, Fermi level positions, among others, from quantitative analysis of the IV curves under illuminations or without. The backward diodes were then annealed at various high temperatures, intended to annihilate a part of the inherent defects, and were then characterized in similar procedures. After annealing, the tunneling characteristics of backward diodes diminished, replaced by slightly leaky regular diode or pin-diode characteristics. Very weak sign of photovoltaic response, if any, could be identified. A circuit model is proposed to account for the observed photoconduction behaviors and their correlations with the processes of the device fabrications are discussed.

論文審定書 i
摘要 ii
Abstract iii
目錄 iv
圖目錄 vi
表目錄 viii
第一章 緒論 1
1-1 前言 1
1-2 氧化鋅（ZnO）特性與成長方式 1
1-3 二極體（Diode）製作與應用 4
1-3-1 p-n 接面二極體（p-n Diode） 4
1-3-2 蕭特基位障二極體（Schottky-barrier Diode） 5
1-3-3 穿隧二極體（Tunnel Diode） 6
第二章 實驗儀器及理論基礎 7
2-1 濺鍍（Sputtering）系統及原理 7
2-1-1 濺鍍原理 7
電漿（Plasma） 7
直流射頻濺鍍（DC Sputtering） 8
交流射頻濺鍍（RF Sputtering） 8
磁控濺鍍（Magnetron Sputtering） 8
2-1-2 濺鍍系統 9
2-2 X光繞射儀（X-Ray Diffraction, XRD） 9
2-2-1 X-ray 特性與繞射原理 9
X-ray 特性 9
X-ray 繞射原理 10
2-2-2 X-ray 繞射儀掃描模式 11
2Theta-Omega模式（2θ-ω scan） 11
Phi模式（φ scan） 11
極圖模式（Pole-Figure scan） 12
2-3 光激發螢光（Photoluminescence, PL） 12
2-4 掃描式電子顯微鏡 13
2-5 電性量測 13
2-5-1 pin二極體 13
2-5-2 傳輸線模型（TLM） 14
2-5-3 R-T 變溫電阻量測 16
金屬對溫度關係 16
半導體對溫度關係 16
2-5-4 雷射電性量測 17
第三章 實驗設計 18
第四章 實驗結果與分析 19
4-1 PIN二極體之成長參數 19
4-2 PIN二極體之結構與電性分析 21
4-2-1 X光繞射（XRD）結構分析 21
4-2-2 電性（I-V）分析 23
4-2-3 電阻對溫度曲線（RT）分析 26
4-2-4 光激發螢光（PL）光譜分析 28
4-2-5 雷射電性（photoconductor I-V）分析 31
4-3 熱退火對PIN二極體之結構與電性分析 36
4-3-1 退火後 X 光繞射（XRD）結構分析 36
4-3-2 掃描式電子顯微鏡（SEM）分析 37
4-3-3 退火後電性（I-V）分析 38
4-3-4 退火後雷射電性（photoconductor I-V）分析 42
第五章 結論 51
參考文獻 52

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