本文利用商業數值模擬軟體FLUENT，模擬二氧化矽層運用化學氣相沉積於矩形基座之沉積情形，全文把重點放在基座表面的沉積率和熱傳係數Nu值上。本文探討入口區域大小、入口至基座距離、出口區域大小、Re值、基座溫度、兩種反應氣體的入口流量等六個變數對基座表面沉積率的影響。
研究發現，不管我們改變哪個變數時，基座的四個角落都是沉積率最低的區域，且在靠近四個角落的部分，容易產生四個沉積率較高的小區域。當入口區域跟基座一樣大或是比基座大時，或是入口到基座的距離越小，我們發現基座上的沉積率較為均勻。當出口區域越大時，基座中間沉積率較均勻的區域會越大。當Re數增加時，沉積率可以有效的提高，但是均勻度卻沒辦法有效的改善。適當增加基座的溫度能有效的增加基座上的沉積率。改變TEOS跟 之流量比，顯示TEOS是比較重要的反應氣體。適當的流量比率可以有較高的沉積率。

This study employed a commercial code FLUENT to simulate a chemical vapor deposition process in a rectangular chamber for deposition of a silicon dioxide layer on a rectangular substrate. We focus on the deposition rate and heat transfer coefficient (Nu number) on the substrate surface. We discuss the effects of the size of inlet region, the distance from inlet to substrate, the size of outlet region, the Reynolds number, the temperature of substrate, the ratio of the inlet flow rates of the two reaction gases on the deposition rate.
The results show that the four corners at the substrate has the lowest deposition rate no matter how the variables are changed. Near the four corners there exist a region with high deposition rate. The deposition rate is more uniform when inlet is larger or equal to the substrate, and when the distance between the inlet and the substrate is small. The larger the size of the outlet region, the larger the uniform deposition rate region present on the central part of the substrate. The deposition rate increases with increasing Re number. However the uniformity remains similarly. The deposition rate also increases with increasing the substrate temperature. A study of the inlet flow rate ratio of TEOS and indicates that TEOS flow rate governs the process. A proper flow rate ratio gives a better deposition rate.

目錄…………………………………………………………………………..I
圖目錄……………...………………………………………………………IV
表目錄………………………………..……………………………….…VII
論文摘要(中文)…………………………………………………………VIII
論文摘要(英文)……………………………………………………...…IX
符號說明…………………………………………………………………X

第一章 緒論……………………………………………………………...1
1-1 前言………………………………………………………………...1
1-2 研究目的………...………………………………………………..1
1-3 研究方法……….…….……..……………………………………..2
1-4 文獻回顧………..……………………………………………………3
第二章 理論分析……………………………………………………………8
2-1 薄膜沉積的原理……………………………………………………8
2-2 化學氣相沉積的類型………………………………………………11
2-3 化學氣相沉積的主要機制…………………………………………11
2-4 基本假設……………………………………………………………12
2-5 統御方程式…………………………………………………………12
2-6 邊界條件……………………………………………………………14
2-7 無因次化……………………………………………………………15
2-8 混和氣體物理特性…………………………………………………19
第三章 數值方法…………………………………………………………23
3-1簡述…………………....…………………..………………………23
3-2 模擬軟體簡介………………………………………………………23
3-3 Fluent離散方法……………………………………………………25
3-4 層流有限率法………………………………………………………26
3-5 速度與壓力連結……………………………………………………28
3-6 模擬結果驗證………………………………………………………31
3-7 網格驗證……………………………………………………………32
3-8 數值求解流程………………………………………………………32
3-9 鬆弛係數與收斂條件………………………………………………33
3-9-1 鬆弛係數…………………………………………………………33
3-9-2 收斂條件…………………………………………………………33
3-10 物理模型………………………………………………………..…34
3-11 變動參數………………………………………………………..…35
第四章 結果與討論…………………………..……………………………48
4-1 研究內容……...……………………………………………….……48
4-2 腔體入口區域大小對基座沉積率的影響…………………………49
4-3入口到基座距離對基座沉積率的影響……………………………50
4-4腔體出口區域大小對基座沉積率的影響…………………………51
4-5 雷諾數對基座沉積率的影響.………………………………………52
4-6 基座溫度對基座沉積率的影響………………..…………………53
4-7 Nu值之曲線回歸………….……..……………..…..……………53
4-8入口反應氣體流量對基座沉積率的影響……………..…………54
第五章 結論與建議……………….………………………………..……87
5-1 結論…………………………….………………………………87
5-2 建議與未來展望……………………………………………….88
第六章 參考文獻…………………………………………………….….…89

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